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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
RFL1N15 Harris Corporation

RFL1N15

N-CHANNEL POWER MOSFET

Harris Corporation

4,903 -
Datasheet - TO-205AF Metal Can Bulk Active N-Channel MOSFET (Metal Oxide) 150 V 1A (Tc) 10V 1.9Ohm @ 1A, 10V 4V @ 250µA - ±20V 200 pF @ 25 V - 8.33W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-205AF (TO-39)
RFP6N45 Harris Corporation

RFP6N45

N-CHANNEL POWER MOSFET

Harris Corporation

210 -
Datasheet - TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 450 V 6A (Tc) 10V 1.25Ohm @ 3A, 10V 4V @ 1mA - ±20V 1500 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
RFM6P10 Harris Corporation

RFM6P10

P-CHANNEL POWER MOSFET

Harris Corporation

3,064 -
Datasheet - TO-220-3 Bulk Active P-Channel MOSFET (Metal Oxide) 100 V 6A (Tc) 10V 600mOhm @ 6A, 10V 4V @ 250µA - ±20V 800 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IRFD322 Harris Corporation

IRFD322

N-CHANNEL POWER MOSFET

Harris Corporation

1,111 -
Datasheet - 4-DIP (0.300", 7.62mm) Bulk Active N-Channel MOSFET (Metal Oxide) 400 V 400mA (Tc) 10V 2.5Ohm @ 250mA, 10V 4V @ 250µA 15 nC @ 10 V ±20V 455 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) - - Through Hole 4-DIP, Hexdip
IRF641 Harris Corporation

IRF641

N-CHANNEL POWER MOSFET

Harris Corporation

8,800 -
Datasheet - TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 150 V 18A (Tc) 10V 180mOhm @ 10A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 1275 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IRF9542 Harris Corporation

IRF9542

P-CHANNEL POWER MOSFET

Harris Corporation

497 -
Datasheet - TO-220-3 Bulk Active P-Channel MOSFET (Metal Oxide) 100 V 15A (Tc) 10V 300mOhm @ 10A, 10V 4V @ 250µA 90 nC @ 10 V ±20V 1100 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
RFW2N06RLE Harris Corporation

RFW2N06RLE

N-CHANNEL POWER MOSFET

Harris Corporation

734 -
Datasheet - 4-DIP (0.300", 7.62mm) Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 2A (Tc) 5V 200mOhm @ 2A, 5V 2V @ 250µA 30 nC @ 10 V +10V, -5V 535 pF @ 25 V - 1.09W (Tc) -55°C ~ 150°C (TJ) - - Through Hole 4-DIP, Hexdip
RFL1N15L Harris Corporation

RFL1N15L

N-CHANNEL POWER MOSFET

Harris Corporation

1,396 -
Datasheet - TO-205AF Metal Can Bulk Active N-Channel MOSFET (Metal Oxide) 150 V 1A (Tc) 5V 1.9Ohm @ 1A, 5V 2V @ 250µA - ±10V 200 pF @ 25 V - 8.33W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-205AF (TO-39)
RF1S9530 Harris Corporation

RF1S9530

-12A, -100V, 0.3 OHM, P-CHANNEL

Harris Corporation

5,418 -
Datasheet - TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active P-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) 10V 300mOhm @ 6.5A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 500 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262 (I2PAK)
IRFF9222 Harris Corporation

IRFF9222

P-CHANNEL POWER MOSFET

Harris Corporation

2,106 -
Datasheet - TO-205AF Metal Can Bulk Active P-Channel MOSFET (Metal Oxide) 200 V 2A (Ta) 10V 2.4Ohm @ 1.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 350 pF @ 25 V - 20W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-205AF (TO-39)
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