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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
HUF76629D3S Harris Corporation

HUF76629D3S

MOSFET N-CH 100V 20A TO252AA

Harris Corporation

458 -
Datasheet UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 20A (Tc) 4.5V, 10V 52mOhm @ 20A, 10V 3V @ 250µA 46 nC @ 10 V ±16V 1285 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
IRF543 Harris Corporation

IRF543

N-CHANNEL POWER MOSFET

Harris Corporation

965 -
Datasheet - TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 80 V 25A (Tc) 10V 100mOhm @ 17A, 10V 4V @ 250µA 59 nC @ 10 V ±20V 1450 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRF121-0001 Harris Corporation

IRF121-0001

9.2A, 80V, 0.27OHM, N CHANNEL MO

Harris Corporation

500 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
RF1S42N03L Harris Corporation

RF1S42N03L

42A, 30V, 0.025 OHMS, N-CHANNEL

Harris Corporation

400 -
Datasheet - TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 42A (Tc) 5V 25mOhm @ 42A, 5V 2V @ 250µA 60 nC @ 10 V ±10V 1650 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262 (I2PAK)
RFL1N12 Harris Corporation

RFL1N12

N-CHANNEL POWER MOSFET

Harris Corporation

845 -
Datasheet - TO-205AF Metal Can Bulk Active N-Channel MOSFET (Metal Oxide) 120 V 1A (Tc) 10V 1.9Ohm @ 1A, 10V 4V @ 250µA - ±20V 200 pF @ 25 V - 8.33W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-205AF (TO-39)
IRFR420 Harris Corporation

IRFR420

2.5A 500V 3.000 OHM N-CHANNEL

Harris Corporation

690 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 2.4A (Tc) 10V 3Ohm @ 1.4A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 360 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
IRF642R Harris Corporation

IRF642R

N-CHANNEL POWER MOSFET

Harris Corporation

500 -
Datasheet - TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 16A (Tc) 10V 220mOhm @ 10A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 1275 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
RF1S45N03L Harris Corporation

RF1S45N03L

N-CHANNEL POWER MOSFET

Harris Corporation

770 -
Datasheet - TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 45A (Tc) 5V 22mOhm @ 45A, 5V 2V @ 250µA 60 nC @ 10 V ±10V 1650 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) - - Through Hole I2PAK (TO-262)
IRFD313 Harris Corporation

IRFD313

N-CHANNEL POWER MOSFET

Harris Corporation

900 -
Datasheet - 4-DIP (0.300", 7.62mm) Bulk Active N-Channel MOSFET (Metal Oxide) 350 V 300mA (Tc) 10V 5Ohm @ 200mA, 10V 4V @ 250µA 7.5 nC @ 10 V ±20V 135 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) - - Through Hole 4-DIP, Hexdip
RF1S45N06SM Harris Corporation

RF1S45N06SM

N-CHANNEL POWER MOSFET

Harris Corporation

700 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 45A - - - - - - - - - - - Surface Mount TO-263AB
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