FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
FDMS3006SDC POWER FIELD-EFFECT TRANSISTOR, 3 onsemi	3,000	-	RFQ	Datasheet	Dual Cool™, PowerTrench®, SyncFET™	8-PowerTDFN	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	34A (Ta)	4.5V, 10V	1.9mOhm @ 30A, 10V	3V @ 1mA	80 nC @ 10 V	±20V	5725 pF @ 15 V	-	3.3W (Ta), 89W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	Dual Cool™56
FQI7N60TU POWER FIELD-EFFECT TRANSISTOR, 7 Fairchild Semiconductor	1,000	-	RFQ	Datasheet	QFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	600 V	7.4A (Tc)	10V	1Ohm @ 3.7A, 10V	5V @ 250µA	38 nC @ 10 V	±30V	1430 pF @ 25 V	-	3.13W (Ta), 142W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	I2PAK (TO-262)
2SK3483-AZ 2SK3483-AZ - SWITCHING N-CHANNEL Renesas	3,077	-	RFQ	Datasheet	-	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	28A (Ta)	4.5V, 10V	52mOhm @ 14A, 10V	2.5V @ 1mA	49 nC @ 10 V	±20V	2300 pF @ 10 V	-	1W (Ta), 40W (Tc)	150°C	-	-	Through Hole	MP-3
IRF6716MTRPBF IRF6716 - 12V-300V N-CHANNEL POW International Rectifier	44,319	-	RFQ	Datasheet	HEXFET®	DirectFET™ Isometric MX	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	25 V	39A (Ta), 180A (Tc)	4.5V, 10V	1.6mOhm @ 40A, 10V	2.4V @ 100µA	59 nC @ 4.5 V	±20V	5150 pF @ 13 V	-	3.6W (Ta), 78W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	DIRECTFET™ MX
IRF6716MTRPBF IRF6716 - 12V-300V N-CHANNEL POW Infineon Technologies	26,497	-	RFQ	Datasheet	HEXFET®	DirectFET™ Isometric MX	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	25 V	39A (Ta), 180A (Tc)	4.5V, 10V	1.6mOhm @ 40A, 10V	2.4V @ 100µA	59 nC @ 4.5 V	±20V	5150 pF @ 13 V	-	3.6W (Ta), 78W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	DIRECTFET™ MX
AUIRL3705ZS MOSFET N-CH 55V 75A D2PAK International Rectifier	8,500	-	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	55 V	75A (Tc)	4.5V, 10V	8mOhm @ 52A, 10V	3V @ 250µA	60 nC @ 5 V	±16V	2880 pF @ 25 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
SPI11N60C3XKSA1 SPI11N60C3 - 600V COOLMOS N-CHAN Infineon Technologies	2,500	-	RFQ	Datasheet	CoolMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	650 V	11A (Tc)	10V	380mOhm @ 7A, 10V	3.9V @ 500µA	60 nC @ 10 V	±20V	1200 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO262-3-1
BUK6C3R3-75C,118 NEXPERIA BUK6C3R3 - N-CHANNEL TR NXP Semiconductors	480	-	RFQ	Datasheet	TrenchMOS™	TO-263-7, D2PAK (6 Leads + Tab)	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	75 V	181A (Tc)	10V	3.4mOhm @ 90A, 10V	2.8V @ 1mA	253 nC @ 10 V	±16V	15800 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	D2PAK-7
FQPF5N90 POWER FIELD-EFFECT TRANSISTOR, 3 Fairchild Semiconductor	450	-	RFQ	Datasheet	QFET®	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	900 V	3A (Tc)	10V	2.3Ohm @ 1.5A, 10V	5V @ 250µA	40 nC @ 10 V	±30V	1550 pF @ 25 V	-	51W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220F-3
FCPF380N60 POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor	2,934	-	RFQ	Datasheet	SuperFET® II	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	600 V	10.2A (Tc)	10V	380mOhm @ 5A, 10V	3.5V @ 250µA	40 nC @ 10 V	±20V	1665 pF @ 25 V	-	31W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220F-3
NTD5C446NT4G NTD5C446 - SINGLE N-CHANNEL POWE onsemi	188,187	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40 V	110A (Tc)	10V	3.5mOhm @ 50A, 10V	4V @ 250µA	34.3 nC @ 10 V	±20V	2300 pF @ 20 V	-	66W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	DPAK
AUIRF4104S MOSFET N-CH 40V 75A D2PAK International Rectifier	7,751	-	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40 V	75A (Tc)	10V	5.5mOhm @ 75A, 10V	4V @ 250µA	100 nC @ 10 V	±20V	3000 pF @ 25 V	-	140W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRFSL7734PBF IRFSL7734 - 12V-300V N-CHANNEL P International Rectifier	280	-	RFQ	Datasheet	HEXFET®, StrongIRFET™	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	75 V	183A (Tc)	6V, 10V	3.5mOhm @ 100A, 10V	3.7V @ 250µA	270 nC @ 10 V	±20V	10150 pF @ 25 V	-	290W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
FDMC7570S POWER FIELD-EFFECT TRANSISTOR, 2 Fairchild Semiconductor	4,336	-	RFQ	Datasheet	PowerTrench®, SyncFET™	8-PowerTDFN	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	25 V	27A (Ta), 40A (Tc)	4.5V, 10V	2mOhm @ 27A, 10V	3V @ 1mA	68 nC @ 10 V	±20V	4410 pF @ 13 V	-	2.3W (Ta), 59W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	Power33
AMR438N MOSFET N-CH 30V 112A DFN5X6 Analog Power Inc.	2,200	-	RFQ	Datasheet	-	8-PowerVDFN	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	42A (Ta), 112A (Tc)	4.5V, 10V	1.9mOhm @ 20A, 10V	1V @ 250µA	55 nC @ 4.5 V	±20V	5770 pF @ 15 V	-	5W (Ta), 83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (5x6)
AMIB144N12N3G MOSFET N-CH 120V 120A TO-263 Analog Power Inc.	1,400	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	120 V	120A (Tc)	6.5V, 10V	9.6mOhm @ 50A, 10V	1V @ 250µA	30 nC @ 6.5 V	±20V	2318 pF @ 50 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263
GT070N15M MOSFET N-CH 150V 140A 320W 5.8m( Goford Semiconductor	800	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	150 V	140A (Tc)	10V	5.8mOhm @ 30A, 10V	4V @ 250µA	89 nC @ 10 V	±20V	5850 pF @ 75 V	-	320W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263
AUIRFZ48N MOSFET N-CH 55V 69A TO220AB International Rectifier	18,190	-	RFQ	Datasheet	HEXFET®	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	55 V	69A (Tc)	10V	14mOhm @ 40A, 10V	4V @ 100µA	63 nC @ 10 V	±20V	1900 pF @ 25 V	-	160W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
IRF6726MTRPBF IRF6726 - 12V-300V N-CHANNEL POW International Rectifier	3,930	-	RFQ	Datasheet	HEXFET®	DirectFET™ Isometric MT	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	32A (Ta), 180A (Tc)	4.5V, 10V	1.7mOhm @ 32A, 10V	2.35V @ 150µA	77 nC @ 4.5 V	±20V	6140 pF @ 15 V	-	2.8W (Ta), 89W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	DIRECTFET™ MT
AUIRL3705N AUIRL3705 - 55V-60V N-CHANNEL AU Infineon Technologies	600	-	RFQ	Datasheet	HEXFET®	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	55 V	89A (Tc)	-	10mOhm @ 46A, 10V	2V @ 250µA	98 nC @ 5 V	-	3600 pF @ 25 V	-	170W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB

FETs, MOSFETs FAQ

What FETs, MOSFETs components can I source from EGOO?

You can browse available FETs, MOSFETs product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete FETs, MOSFETs parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

Does EGOO support BOM and small-batch sourcing?

Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

How do I request pricing and availability?

Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.