PRODUCT DIRECTORY

FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
FCPF2250N80Z Fairchild Semiconductor

FCPF2250N80Z

MOSFET N-CH 800V 2.6A TO220F

Fairchild Semiconductor

360 -
Datasheet SuperFET® II TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 800 V 2.6A (Tc) 10V 2.25Ohm @ 1.3A, 10V 4.5V @ 260µA 14 nC @ 10 V ±20V 585 pF @ 100 V - 21.9W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
BUK7C10-75AITE,118 NXP Semiconductors

BUK7C10-75AITE,118

NEXPERIA BUK7C10-75 - 75A, 75V,

NXP Semiconductors

1,069 -
Datasheet TrenchMOS™ TO-263-7, D2PAK (6 Leads + Tab) Bulk Active N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 10mOhm @ 50A, 10V 4V @ 1mA 121 nC @ 10 V ±20V 4700 pF @ 25 V Current Sensing 272W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK-7
UPA1727G-E1-AT Renesas

UPA1727G-E1-AT

UPA1727G-E1-AT - MOS FIELD EFFEC

Renesas

5,000 -
Datasheet - 8-SOIC (0.173", 4.40mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 10A (Ta) 4V, 10V 19mOhm @ 5A, 10V 2.5V @ 1mA 45 nC @ 10 V ±20V 2400 pF @ 10 V - 2W (Ta) 150°C - - Surface Mount 8-SOP
AM40N20-180P Analog Power Inc.

AM40N20-180P

MOSFET N-CH 200V 34A TO-220

Analog Power Inc.

3,500 -
Datasheet - TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 34A (Ta) 5.5V, 10V 180mOhm @ 10A, 10V 1V @ 250µA 7 nC @ 4.5 V ±20V 948 pF @ 15 V - 300W (Ta) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
GT023N10Q Goford Semiconductor

GT023N10Q

MOSFET N-CH 100V 226A 250W TO-2

Goford Semiconductor

1,200 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 226A (Tc) 10V 2.7mOhm @ 80A, 10V 4V @ 250µA 121 nC @ 10 V ±20V 8488 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247
IRF341 International Rectifier

IRF341

IRF341 - 10A, 350V, N-CHANNEL, P

International Rectifier

2,645 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
FQPF11N50CF Fairchild Semiconductor

FQPF11N50CF

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

1,000 -
Datasheet FRFET® TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 550mOhm @ 5.5A, 10V 4V @ 250µA 55 nC @ 10 V ±30V 2055 pF @ 25 V - 48W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
PSMN009-100P,127 NXP Semiconductors

PSMN009-100P,127

NEXPERIA PSMN009-100P - 75A, 100

NXP Semiconductors

291 -
Datasheet TrenchMOS™ TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 8.8mOhm @ 25A, 10V 4V @ 1mA 156 nC @ 10 V ±20V 8250 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
FDMS8320LDC Fairchild Semiconductor

FDMS8320LDC

N-CHANNEL DUAL COOLTM 56 POWER T

Fairchild Semiconductor

41,418 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
FDA16N50LDTU Fairchild Semiconductor

FDA16N50LDTU

POWER FIELD-EFFECT TRANSISTOR, N

Fairchild Semiconductor

28,520 -
Datasheet - TO-3P-3, SC-65-3, Formed Leads Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 16.5A (Tc) 10V 380mOhm @ 8.3A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 1945 pF @ 25 V - 205W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3PN (L-Forming)
PSMN2R6-60PSQ NXP USA Inc.

PSMN2R6-60PSQ

NOW NEXPERIA PSMN2R6-60PSQ - 150

NXP USA Inc.

266 -
Datasheet - TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 150A (Tc) 10V 2.6mOhm @ 25A, 10V 4V @ 1mA 140 nC @ 10 V ±20V 7629 pF @ 25 V - 326W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
UPA2792GR(0)-E1-AZ Renesas Electronics Corporation

UPA2792GR(0)-E1-AZ

SWITCHING N AND P TRANSISTORS

Renesas Electronics Corporation

10,000 -
Datasheet - - Bulk Not For New Designs - - - 10A (Tj) - - - - - - - - - - - - -
AM20N10-52PF Analog Power Inc.

AM20N10-52PF

MOSFET N-CH 100V 20A TO-220CFM

Analog Power Inc.

2,500 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 100 V 20A (Tc) 6V, 10V 52mOhm @ 10A, 10V 1V @ 250µA 18 nC @ 6 V ±20V 1184 pF @ 50 V - 60W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220CFM
AM320N06-02P Analog Power Inc.

AM320N06-02P

MOSFET N-CH 60V 230A TO-220

Analog Power Inc.

800 -
Datasheet - TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 230A (Tc) 4.5V, 10V 2.9mOhm @ 230A, 10V 1V @ 250µA 112 nC @ 4.5 V ±20V 13147 pF @ 15 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
FQI27N25TU Fairchild Semiconductor

FQI27N25TU

MOSFET N-CH 250V 25.5A I2PAK

Fairchild Semiconductor

600 -
Datasheet QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 250 V 25.5A (Tc) 10V 110mOhm @ 12.75A, 10V 5V @ 250µA 65 nC @ 10 V ±30V 2450 pF @ 25 V - 3.13W (Ta), 180W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262 (I2PAK)
FDP39N20 Fairchild Semiconductor

FDP39N20

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor

500 -
Datasheet UniFET™ TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 39A (Tc) 10V 66mOhm @ 19.5A, 10V 5V @ 250µA 49 nC @ 10 V ±30V 2130 pF @ 25 V - 251W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
GT016N10TL Goford Semiconductor

GT016N10TL

MOSFET N-CH 100V 362A TOLL-8

Goford Semiconductor

2,000 -
Datasheet - 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 362A (Tc) 10V 1.6mOhm @ 15A, 10V 4.5V @ 250µA 165 nC @ 10 V ±20V 10037 pF @ 50 V - 450W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TOLL
UPA1760G-E1-AT Renesas

UPA1760G-E1-AT

MOSFET 2N-CH 30V 8A 8SOP

Renesas

80,000 -
Datasheet - 8-SOIC (0.173", 4.40mm Width) Bulk Obsolete - MOSFET (Metal Oxide) - 8A (Ta) - 26mOhm @ 4A, 10V 2.5V @ 1mA - - - - - 150°C - - Surface Mount 8-SOP
FDP8441 Fairchild Semiconductor

FDP8441

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor

14,407 -
Datasheet PowerTrench® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 23A (Ta), 80A (Tc) 10V 2.7mOhm @ 80A, 10V 4V @ 250µA 280 nC @ 10 V ±20V 15000 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
AM7411P Analog Power Inc.

AM7411P

MOSFET P-CH -100V 33A DFN5X6

Analog Power Inc.

2,200 -
Datasheet - 8-PowerVDFN Bulk Active P-Channel MOSFET (Metal Oxide) -100 V 6A (Ta), 33A (Tc) 4.5V, 10V 95mOhm @ 3A, 10V 1V @ 250µA 30 nC @ 4.5 V ±20V 3665 pF @ 15 V - 5W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (5.2x5.55)
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FETs, MOSFETs FAQ

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