PRODUCT DIRECTORY

FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
FCP165N65S3 onsemi

FCP165N65S3

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi

16,726 -
Datasheet SuperFET® III TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 650 V 19A (Tc) 10V 165mOhm @ 9.5A, 10V 4.5V @ 1.9mA 39 nC @ 10 V ±30V 1500 pF @ 400 V - 154W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
AUIRF2903Z International Rectifier

AUIRF2903Z

MOSFET N-CH 30V 160A TO220AB

International Rectifier

2,150 -
Datasheet HEXFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 160A (Tc) 10V 2.4mOhm @ 75A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 6320 pF @ 25 V - 290W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
FCP165N65S3R0 Fairchild Semiconductor

FCP165N65S3R0

FCP165N65S3R0 - POWER MOSFET, N-

Fairchild Semiconductor

2,115 -
Datasheet SuperFET® III TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 650 V 19A (Tc) 10V 165mOhm @ 9.5A, 10V 4.5V @ 440mA 39 nC @ 10 V ±30V 1500 pF @ 400 V - 154W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
AM90N15-20P Analog Power Inc.

AM90N15-20P

MOSFET N-CH 150V 90A TO-220

Analog Power Inc.

2,300 -
Datasheet - TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 150 V 90A (Ta) 5.5V, 10V 24mOhm @ 100A, 10V 1V @ 250µA 123 nC @ 5.5 V ±20V 9857 pF @ 15 V - 300W (Ta) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
AM90N04-02P Analog Power Inc.

AM90N04-02P

MOSFET N-CH 40V 232A TO-220

Analog Power Inc.

2,200 -
Datasheet - TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 232A (Tc) 4.5V, 10V 2.3mOhm @ 45A, 10V 1V @ 250µA 65 nC @ 4.5 V ±20V 7019 pF @ 15 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
AUIRF3805L International Rectifier

AUIRF3805L

MOSFET N-CH 55V 160A TO262

International Rectifier

2,029 -
Datasheet HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 160A (Tc) 10V 3.3mOhm @ 75A, 10V 4V @ 250µA 290 nC @ 10 V ±20V 7960 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
IRFI3306GPBF International Rectifier

IRFI3306GPBF

IRFI3306G - 60V SINGLE N-CHANNEL

International Rectifier

494 -
Datasheet HEXFET® TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 71A (Tc) 10V 4.2mOhm @ 43A, 10V 4V @ 1.037mA 135 nC @ 10 V ±20V 4685 pF @ 50 V - 46W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220 Full Pack
PSMN6R3-120PS NXP Semiconductors

PSMN6R3-120PS

PSMN6R3-120PS - N-CHANNEL 120V S

NXP Semiconductors

319 -
Datasheet - TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 120 V 70A (Ta) 10V 6.7mOhm @ 25A, 10V 4V @ 1mA 207.1 nC @ 10 V ±20V 11384 pF @ 60 V - 405W (Ta) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRFS4115TRL7PP International Rectifier

IRFS4115TRL7PP

IRFS4115 - 12V-300V N-CHANNEL PO

International Rectifier

23,788 -
Datasheet HEXFET® TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Bulk Active N-Channel MOSFET (Metal Oxide) 150 V 105A (Tc) 10V 11.8mOhm @ 63A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 5320 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK (7-Lead)
HUF75631S3ST Fairchild Semiconductor

HUF75631S3ST

MOSFET N-CH 100V 33A D2PAK

Fairchild Semiconductor

247 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 33A (Tc) 10V 40mOhm @ 33A, 10V 4V @ 250µA 79 nC @ 20 V ±20V 1220 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
FCPF11N60NT Fairchild Semiconductor

FCPF11N60NT

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

14,218 -
Datasheet SuperMOS™ TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 10.8A (Tc) 10V 299mOhm @ 5.4A, 10V 4V @ 250µA 35.6 nC @ 10 V ±30V 1505 pF @ 100 V - 32.1W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
NP80N055MHE-S18-AY Renesas

NP80N055MHE-S18-AY

NP80N055MHE-S18-AY - SWITCHINGN-

Renesas

2,400 -
Datasheet - TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 11mOhm @ 40A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 3600 pF @ 25 V - 1.8W (Ta), 120W (Tc) 175°C - - Through Hole MP-25K
2SK3057-AZ Renesas Electronics Corporation

2SK3057-AZ

2SK3057 - POWER TRS2

Renesas Electronics Corporation

2,378 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
NP80N055KLE-E1-AY Renesas

NP80N055KLE-E1-AY

NP80N055KLE-E1-AY - SWITCHINGN-C

Renesas

1,600 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 11mOhm @ 40A, 10V 2.5V @ 250µA 75 nC @ 10 V ±20V 4400 pF @ 25 V - 1.8W (Ta), 120W (Tc) 175°C - - Surface Mount TO-263-3
AM90P06-20B Analog Power Inc.

AM90P06-20B

MOSFET P-CH 60V 90A TO-263

Analog Power Inc.

600 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active P-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 20mOhm @ 20A, 10V 1V @ 250µA 53 nC @ 4.5 V ±20V 2156 pF @ 15 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263
NDP708AE Fairchild Semiconductor

NDP708AE

60A, 80V, 0.022OHM, N-CHANNEL MO

Fairchild Semiconductor

3,240 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
AUIRF4905L Infineon Technologies

AUIRF4905L

AUIRF4905 - 20V-150V P-CHANNEL A

Infineon Technologies

1,077 -
Datasheet HEXFET® TO-262 Bulk Active P-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 20mOhm @ 42A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 3500 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262
FCP21N60N onsemi

FCP21N60N

FCP21N60 - N-CHANNEL, MOSFET

onsemi

6,400 -
Datasheet - TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 600 V - - - - - - - - - - - - Through Hole TO-220-3
RJK5012DPP-MG#T2 Renesas

RJK5012DPP-MG#T2

RJK5012DPP - N CHANNEL MOSFET

Renesas

478 -
Datasheet - TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 500 V 12A (Ta) 10V 620mOhm @ 6A, 10V 4.5V @ 1mA 29 nC @ 10 V ±30V 1100 pF @ 25 V - 30W (Tc) 150°C - - Through Hole TO-220FN
2SK3714(0)-S12-AZ Renesas

2SK3714(0)-S12-AZ

2SK3714 - SWITCHING N-CHANNEL

Renesas

7,805 -
Datasheet - TO-220-3 Isolated Tab Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4V, 10V 13mOhm @ 25A, 10V 2.5V @ 1mA 60 nC @ 10 V ±20V 3200 pF @ 10 V - 2W (Ta), 35W (Tc) 150°C - - Through Hole MP-45F
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FETs, MOSFETs FAQ

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