PRODUCT DIRECTORY

FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SGT120R65AL STMicroelectronics

SGT120R65AL

650 V, 75 MOHM TYP., 15 A, E-MOD

STMicroelectronics

6,377 -
Datasheet - 8-PowerVDFN Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 15A (Tc) 6V 120mOhm @ 5A, 6V 2.6V @ 12mA 3 nC @ 6 V +6V, -10V 125 pF @ 400 V - 192W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerFlat™ (5x6) HV
MCTL2D0N10YHR-TP Micro Commercial Co

MCTL2D0N10YHR-TP

N-CHANNEL MOSFET,TOLL-8L

Micro Commercial Co

4,354 -
Datasheet - 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 300A (Tc) 10V 2mOhm @ 20A, 10V 3.8V @ 250µA 89 nC @ 10 V ±20V 6775 pF @ 50 V - 333W (Tj) -55°C ~ 175°C (TJ) - - Surface Mount TOLL-8L
MXP120A250FW-GE3 Vishay Siliconix

MXP120A250FW-GE3

SILICON CARBIDE MOSFET

Vishay Siliconix

8,641 -
Datasheet MaxSiC™ TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 10.5A (Tc) 18V, 20V 313mOhm @ 4A, 20V 3.1V @ 10mA 20.3 nC @ 18 V +22V, -10V 447 pF @ 800 V - 56W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3L
TK090Z65Z,S1F Toshiba Semiconductor and Storage

TK090Z65Z,S1F

MOSFET N-CH 650V 30A TO247-4L

Toshiba Semiconductor and Storage

25 -
Datasheet DTMOSVI TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Ta) 10V 90mOhm @ 15A, 10V 4V @ 1.27mA 47 nC @ 10 V ±30V 2780 pF @ 300 V - 230W (Tc) 150°C - - Through Hole TO-247-4L(T)
IPP023N10N5AKSA1 Infineon Technologies

IPP023N10N5AKSA1

MOSFET N-CH 100V 120A TO220-3

Infineon Technologies

4,142 -
Datasheet OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 6V, 10V 2.3mOhm @ 100A, 10V 3.8V @ 270µA 210 nC @ 10 V ±20V 15600 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
IQFH47N04NM6ATMA1 Infineon Technologies

IQFH47N04NM6ATMA1

TRENCH <= 40V

Infineon Technologies

8,789 -
Datasheet OptiMOS™ 6 12-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 58A (Ta), 507A (Tc) 6V, 10V 0.47mOhm @ 100A, 10V 2.8V @ 1.05mA 221 nC @ 10 V ±20V 13300 pF @ 20 V - 3W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSON-12-1
NVMFS5C404NLWFET1G onsemi

NVMFS5C404NLWFET1G

T6-40V N 0.67 MOHMS LL

onsemi

5,520 -
Datasheet - 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 52A (Ta), 370A (Tc) 4.5V, 10V 0.67mOhm @ 50A, 10V 2V @ 250µA 181 nC @ 10 V ±20V 12168 pF @ 25 V - 3.9W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 5-DFN (5x6) (8-SOFL)
PSMN1R4-100ASEJ Nexperia USA Inc.

PSMN1R4-100ASEJ

N-CHANNEL, 100 V, 1.36 MOHM, MOS

Nexperia USA Inc.

7,232 -
Datasheet - 12-BESOP (0.370", 9.40mm Width), Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 340A (Tc) 10V 1.36mOhm @ 25A, 10V 3.6V @ 1mA 366 nC @ 10 V ±20V 26023 pF @ 50 V - 935W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount CCPAK1212
PSMN1R4-100CSEJ Nexperia USA Inc.

PSMN1R4-100CSEJ

N-CHANNEL, 100 V, 1.42 MOHM, MOS

Nexperia USA Inc.

9,602 -
Datasheet - 12-BESOP (0.370", 9.40mm Width), Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 340A (Tc) 10V 1.42mOhm @ 25A, 10V 3.6V @ 1mA 366 nC @ 10 V ±20V 26023 pF @ 50 V - 935W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount CCPAK1212i
PJMH125N60FRC_T0_00601 Panjit International Inc.

PJMH125N60FRC_T0_00601

600V 125mohm 30A SJ MOSFET

Panjit International Inc.

8,313 -
Datasheet - - Tube Active - - - - - - - - - - - - - - - - -
IPP051N15N5AKSA1 Infineon Technologies

IPP051N15N5AKSA1

MOSFET N-CH 150V 120A TO220-3

Infineon Technologies

2,758 -
Datasheet OptiMOS™ 5 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 150 V 120A (Tc) 8V, 10V 5.1mOhm @ 60A, 10V 4.6V @ 264µA 100 nC @ 10 V ±20V 7800 pF @ 75 V - 300mW (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
PJMB105N60FRC_R2_00201 Panjit International Inc.

PJMB105N60FRC_R2_00201

600V 105mohm 35A SJ

Panjit International Inc.

2,854 -
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
PSMN1R2-80CSEJ Nexperia USA Inc.

PSMN1R2-80CSEJ

N-CHANNEL, 80 V, 1.18 MOHM, MOSF

Nexperia USA Inc.

3,998 -
Datasheet - 12-BESOP (0.370", 9.40mm Width), Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 375A (Ta) 10V 1.18mOhm @ 25A, 10V 3.6V @ 1mA 350 nC @ 10 V ±20V 26187 pF @ 40 V - 935W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount CCPAK1212i
PSMN1R2-80ASEJ Nexperia USA Inc.

PSMN1R2-80ASEJ

N-CHANNEL, 80 V, 1.18 MOHM, MOSF

Nexperia USA Inc.

9,426 -
Datasheet - 12-BESOP (0.370", 9.40mm Width), Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 375A (Ta) 10V 1.18mOhm @ 25A, 10V 3.6V @ 1mA 350 nC @ 10 V ±20V 26187 pF @ 40 V - 935W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount CCPAK1212
PSMN1R4-100CSFJ Nexperia USA Inc.

PSMN1R4-100CSFJ

NEXTPOWER 100 V, 1.35 MOHM, N-CH

Nexperia USA Inc.

9,136 -
Datasheet - 12-BESOP (0.370", 9.40mm Width), Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 400A (Ta) 7V, 10V 1.35mOhm @ 25A, 10V 4V @ 1mA 248 nC @ 10 V ±20V 17737 pF @ 50 V - 1.071kW (Tc) -55°C ~ 175°C (TJ) - - Surface Mount CCPAK1212i
PSMN1R3-100ASFJ Nexperia USA Inc.

PSMN1R3-100ASFJ

NEXTPOWER 100 V, 1.3 MOHM, N-CHA

Nexperia USA Inc.

7,401 -
Datasheet - 12-BESOP (0.370", 9.40mm Width), Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 400A (Ta) 7V, 10V 1.3mOhm @ 25A, 10V 4V @ 1mA 248 nC @ 10 V ±20V 17737 pF @ 50 V - 1.071kW (Tc) -55°C ~ 175°C (TJ) - - Surface Mount CCPAK1212
SIHP125N65E-GE3 Vishay Siliconix

SIHP125N65E-GE3

E SERIES POWER MOSFET 650 V (D-

Vishay Siliconix

7,601 -
Datasheet E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 27A (Tc) 10V 120mOhm @ 12A, 10V 5V @ 250µA 57 nC @ 10 V ±30V 1938 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SIHB125N65E-GE3 Vishay Siliconix

SIHB125N65E-GE3

E SERIES POWER MOSFET 650 V (D-

Vishay Siliconix

5,802 -
Datasheet E TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 650 V 27A (Tc) 10V 120mOhm @ 12A, 10V 5V @ 250µA 57 nC @ 10 V ±30V 1938 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
MCW075N60FH-BP Micro Commercial Co

MCW075N60FH-BP

N-CHANNEL MOSFET,TO-247

Micro Commercial Co

4,206 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 41A (Tc) 10V 75mOhm @ 20A, 10V 5V @ 2.8mA 81 nC @ 10 V ±30V 3202 pF @ 100 V - 312.5W (Tj) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
MCW105N60FH-BP Micro Commercial Co

MCW105N60FH-BP

N-CHANNEL MOSFET,TO-247

Micro Commercial Co

9,625 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30.6A (Tc) 10V 105mOhm @ 15.3A, 10V 5V @ 2.1mA 57 nC @ 10 V ±30V 2240 pF @ 100 V - 240W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
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FETs, MOSFETs FAQ

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