PRODUCT DIRECTORY

FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK110Z65Z,S1F Toshiba Semiconductor and Storage

TK110Z65Z,S1F

POWER MOSFET TRANSISTOR TO-247-4

Toshiba Semiconductor and Storage

20 -
Datasheet DTMOSVI TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Ta) 10V 110mOhm @ 12A, 10V 4V @ 1.02mA 40 nC @ 10 V ±30V 2250 pF @ 300 V - 190W (Tc) 150°C - - Through Hole TO-247-4L(T)
SIHH125N65E-T1-GE3 Vishay Siliconix

SIHH125N65E-T1-GE3

E SERIES POWER MOSFET 650 V (D-

Vishay Siliconix

9,506 -
Datasheet E 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 25A (Tc) 10V 120mOhm @ 12A, 10V 5V @ 250µA 57 nC @ 10 V ±30V 1938 pF @ 100 V - 174W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 8 x 8
PSMN1R1-80ASFJ Nexperia USA Inc.

PSMN1R1-80ASFJ

NEXTPOWER 80 V, 1.11 MOHM, N-CHA

Nexperia USA Inc.

8,658 -
Datasheet - 12-BESOP (0.370", 9.40mm Width), Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 385A (Tc) 7V, 10V 1.11mOhm @ 25A, 10V 4V @ 1mA 363 nC @ 10 V ±20V 24627 pF @ 40 V - 935W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount CCPAK1212
PSMN1R1-80CSFJ Nexperia USA Inc.

PSMN1R1-80CSFJ

NEXTPOWER 80 V, 1.16 MOHM, N-CHA

Nexperia USA Inc.

4,772 -
Datasheet - 12-BESOP (0.370", 9.40mm Width), Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 400A (Ta) 7V, 10V 1.16mOhm @ 25A, 10V 4V @ 1mA 206 nC @ 10 V ±20V 15363 pF @ 40 V - 1.071kW (Tc) -55°C ~ 175°C (TJ) - - Surface Mount CCPAK1212i
SIHK125N65E-T1-GE3 Vishay Siliconix

SIHK125N65E-T1-GE3

E SERIES POWER MOSFET 650 V (D-

Vishay Siliconix

3,888 -
Datasheet E 8-PowerBSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 25A (Tc) 10V 120mOhm @ 12A, 10V 5V @ 250µA 57 nC @ 10 V ±30V 1938 pF @ 100 V - 174W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK®10 x 12
IXTH450P2 IXYS

IXTH450P2

MOSFET N-CH 500V 16A TO247

IXYS

3,121 -
Datasheet PolarP2™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 330mOhm @ 8A, 10V 4.5V @ 250µA 43 nC @ 10 V ±30V 2530 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXTH)
MXP120A250FL-GE3 Vishay Siliconix

MXP120A250FL-GE3

SILICON CARBIDE MOSFET

Vishay Siliconix

9,944 -
Datasheet - - Tube Active - - - - - - - - - - - - - - - - -
TK065Z65Z,S1F Toshiba Semiconductor and Storage

TK065Z65Z,S1F

POWER MOSFET TRANSISTOR TO-247-4

Toshiba Semiconductor and Storage

25 -
Datasheet DTMOSVI TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 38A (Ta) 10V 65mOhm @ 19A, 10V 4V @ 1.69mA 62 nC @ 10 V ±30V 3650 pF @ 300 V - 270W (Tc) 150°C - - Through Hole TO-247-4L(T)
PJMH105N60FRC_T0_00601 Panjit International Inc.

PJMH105N60FRC_T0_00601

600V 105mohm 35A SJ MOSFET

Panjit International Inc.

6,356 -
Datasheet - - Tube Active - - - - - - - - - - - - - - - - -
SIHG70N60EF-GE3 Vishay Siliconix

SIHG70N60EF-GE3

MOSFET N-CH 600V 70A TO247AC

Vishay Siliconix

7,948 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 70A (Tc) 10V 38mOhm @ 35A, 10V 4V @ 250µA 380 nC @ 10 V ±30V 7500 pF @ 100 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IQFH39N04NM6ATMA1 Infineon Technologies

IQFH39N04NM6ATMA1

TRENCH <= 40V

Infineon Technologies

2,674 -
Datasheet OptiMOS™ 6 12-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 63A (Ta), 600A (Tc) 6V, 10V 0.39mOhm @ 100A, 10V 2.8V @ 1.05mA 273 nC @ 10 V ±20V 16400 pF @ 20 V - 3W (Ta), 273W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSON-12-1
TK35A65W5,S5X Toshiba Semiconductor and Storage

TK35A65W5,S5X

MOSFET N-CH 650V 35A TO220SIS

Toshiba Semiconductor and Storage

22 -
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Tc) 10V 95mOhm @ 17.5A, 10V 4.5V @ 2.1mA 115 nC @ 10 V ±30V 4100 pF @ 300 V - 50W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
SIHG125N65E-GE3 Vishay Siliconix

SIHG125N65E-GE3

E SERIES POWER MOSFET 650 V (D-

Vishay Siliconix

3,526 -
Datasheet E TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 27A (Tc) 10V 120mOhm @ 12A, 10V 5V @ 250µA 57 nC @ 10 V ±30V 1938 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IGLT65R110D2ATMA1 Infineon Technologies

IGLT65R110D2ATMA1

IGLT65R110D2ATMA1

Infineon Technologies

7,608 -
Datasheet CoolGaN™ 16-PowerSOP Module Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 15A (Tc) - - 1.6V @ 1.3mA 2.4 nC @ 3 V -10V 170 pF @ 400 V - 55W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-16-8
IPP022N12NM6AKSA1 Infineon Technologies

IPP022N12NM6AKSA1

TRENCH >=100V

Infineon Technologies

9,464 -
Datasheet OptiMOS™ 6 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120 V 29A (Ta), 203A (Tc) 8V, 10V 2.2mOhm @ 100A, 10V 3.6V @ 275µA 141 nC @ 10 V ±20V 11000 pF @ 60 V - 3.8W (Ta), 395W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
SIHK100N65E-T1-GE3 Vishay Siliconix

SIHK100N65E-T1-GE3

E SERIES POWER MOSFET 650 V (D-

Vishay Siliconix

6,498 -
Datasheet E 8-PowerBSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 28A (Tc) 10V 100mOhm @ 12A, 10V 5V @ 250µA 62 nC @ 10 V ±30V 2137 pF @ 100 V - 184W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK®10 x 12
CCSPG1560N TR PBFREE Central Semiconductor Corp

CCSPG1560N TR PBFREE

SURFACE MOUNT MOSFET

Central Semiconductor Corp

2,095 -
Datasheet - 25-PowerVFQFN Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 150 V 60A (Tj) 5V 7mOhm @ 20A, 5V 2.1V @ 7mA 13 nC @ 5 V +6V, -4V 1450 pF @ 75 V - 200mW (Ta) -40°C ~ 150°C (TJ) - - Surface Mount 25-CSP (4x6)
G3F320MT12J-TR GeneSiC Semiconductor

G3F320MT12J-TR

1200V 320M TO-263-7 G3F SIC MOSF

GeneSiC Semiconductor

4,982 -
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
TK31A60W,S4VX Toshiba Semiconductor and Storage

TK31A60W,S4VX

MOSFET N-CH 600V 30.8A TO220SIS

Toshiba Semiconductor and Storage

19 -
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 15.4A, 10V 3.7V @ 1.5mA 86 nC @ 10 V ±30V 3000 pF @ 300 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
SIHP100N65E-GE3 Vishay Siliconix

SIHP100N65E-GE3

E SERIES POWER MOSFET 650 V (D-

Vishay Siliconix

8,627 -
Datasheet E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 100mOhm @ 12A, 10V 5V @ 250µA 62 nC @ 10 V ±30V 2137 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
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