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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
GD25MPS17H GeneSiC Semiconductor

GD25MPS17H

DIODE SIL CARB 1.7KV 56A TO247-2

GeneSiC Semiconductor

1,285 -
Datasheet SiC Schottky MPS™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1700 V 56A 1.8 V @ 25 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1700 V 1083pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
GC05MPS33J GeneSiC Semiconductor

GC05MPS33J

DIODE SIL CARB 3.3KV 5A TO263-7

GeneSiC Semiconductor

1,114 -
Datasheet SiC Schottky MPS™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Active SiC (Silicon Carbide) Schottky 3300 V 5A - No Recovery Time > 500mA (Io) 0 ns - - - - Surface Mount TO-263-7 175°C
S300Y GeneSiC Semiconductor

S300Y

DIODE GEN PURP 1.6KV 300A DO9

GeneSiC Semiconductor

54 -
Datasheet - DO-205AB, DO-9, Stud Bulk Active Standard 1600 V 300A 1.2 V @ 300 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1600 V - - - Chassis, Stud Mount DO-9 -60°C ~ 180°C
GC50MPS33H GeneSiC Semiconductor

GC50MPS33H

DIODE SIL CARB 3.3KV 50A TO247-2

GeneSiC Semiconductor

78 -
Datasheet SiC Schottky MPS™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 3300 V 50A - No Recovery Time > 500mA (Io) 0 ns - - - - Through Hole TO-247-2 175°C
GD02MPS12E GeneSiC Semiconductor

GD02MPS12E

DIODE SIL CARB 1.2KV 8A TO252-2

GeneSiC Semiconductor

2,809 -
Datasheet SiC Schottky MPS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 8A 1.8 V @ 2 A No Recovery Time > 500mA (Io) 0 ns 5 µA @ 1200 V 73pF @ 1V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
GD30MPS06A GeneSiC Semiconductor

GD30MPS06A

DIODE SIL CARB 650V 30A TO220-2

GeneSiC Semiconductor

1,744 -
Datasheet SiC Schottky MPS™ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 30A - No Recovery Time > 500mA (Io) 0 ns - - - - Through Hole TO-220-2 175°C
1N3881 GeneSiC Semiconductor

1N3881

DIODE GEN PURP 200V 6A DO4

GeneSiC Semiconductor

414 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 200 V 6A 1.4 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 15 µA @ 50 V - - - Chassis, Stud Mount DO-4 -65°C ~ 150°C
GD20MPS12H GeneSiC Semiconductor

GD20MPS12H

DIODE SIL CARB 1.2KV 39A TO247-2

GeneSiC Semiconductor

2,961 -
Datasheet SiC Schottky MPS™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 39A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 1200 V 737pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
GD30MPS12H GeneSiC Semiconductor

GD30MPS12H

DIODE SIL CARB 1.2KV 55A TO247-2

GeneSiC Semiconductor

503 -
Datasheet SiC Schottky MPS™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 55A 1.8 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 20 µA @ 1200 V 1101pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
1N1190AR GeneSiC Semiconductor

1N1190AR

DIODE GEN PURP REV 600V 40A DO5

GeneSiC Semiconductor

869 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 600 V 40A 1.1 V @ 40 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V - - - Chassis, Stud Mount DO-5 -65°C ~ 190°C
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Single Diodes FAQ

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