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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
GD30MPS12J-TR GeneSiC Semiconductor

GD30MPS12J-TR

DIODE SIL CARB 1.2KV 59A TO263-7

GeneSiC Semiconductor

2,036 -
Datasheet SiC Schottky MPS™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 59A 1.8 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1200 V 1101pF @ 1V, 1MHz - - Surface Mount TO-263-7 -55°C ~ 175°C
GD15MPS17H GeneSiC Semiconductor

GD15MPS17H

DIODE SIL CARB 1.7KV 36A TO247-2

GeneSiC Semiconductor

1,214 -
Datasheet SiC Schottky MPS™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1700 V 36A 1.8 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1700 V 1082pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
GD50MPS12H GeneSiC Semiconductor

GD50MPS12H

DIODE SIL CARB 1.2KV 92A TO247-2

GeneSiC Semiconductor

124 -
Datasheet SiC Schottky MPS™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 92A 1.8 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 15 µA @ 1200 V 1835pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
GD10MPS12H GeneSiC Semiconductor

GD10MPS12H

DIODE SIL CARB 1.2KV 10A TO247-2

GeneSiC Semiconductor

540 -
Datasheet SiC Schottky MPS™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A - No Recovery Time > 500mA (Io) 0 ns - - - - Through Hole TO-247-2 175°C
GD30MPS06H GeneSiC Semiconductor

GD30MPS06H

DIODE SIL CARB 650V 49A TO247-2

GeneSiC Semiconductor

614 -
Datasheet SiC Schottky MPS™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 49A - No Recovery Time > 500mA (Io) - - 735pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
GD20MPS12A GeneSiC Semiconductor

GD20MPS12A

DIODE SIL CARB 1.2KV 42A TO220-2

GeneSiC Semiconductor

2,307 -
Datasheet SiC Schottky MPS™ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 42A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 1200 V 737pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
1N3891 GeneSiC Semiconductor

1N3891

DIODE GEN PURP 200V 12A DO4

GeneSiC Semiconductor

887 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 200 V 12A 1.4 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 50 V - - - Chassis, Stud Mount DO-4 -65°C ~ 150°C
1N1184 GeneSiC Semiconductor

1N1184

DIODE GEN PURP 100V 35A DO5

GeneSiC Semiconductor

191 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 100 V 35A 1.2 V @ 35 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V - - - Chassis, Stud Mount DO-5 -65°C ~ 190°C
1N1184A GeneSiC Semiconductor

1N1184A

DIODE GEN PURP 100V 40A DO5

GeneSiC Semiconductor

260 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 100 V 40A 1.1 V @ 40 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V - - - Chassis, Stud Mount DO-5 -65°C ~ 200°C
1N2130AR GeneSiC Semiconductor

1N2130AR

DIODE GEN PURP REV 150V 60A DO5

GeneSiC Semiconductor

245 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 150 V 60A 1.1 V @ 60 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V - - - Chassis, Stud Mount DO-5 -65°C ~ 200°C
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Single Diodes FAQ

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