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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
65DN06B02ELEMXPSA1 Infineon Technologies

65DN06B02ELEMXPSA1

DIODE GP 600V 15130A D-ELEM-1

Infineon Technologies

19 -
Datasheet - DO-200AC, K-PUK Bulk Active Standard 600 V 15130A 890 mV @ 8000 A Standard Recovery >500ns, > 200mA (Io) - 100 mA @ 600 V - - - Clamp On BG-D-ELEM-1 180°C (Max)
IDH06SG60CXKSA2 Infineon Technologies

IDH06SG60CXKSA2

DIODE SIL CARB 600V 6A TO220-2-1

Infineon Technologies

37 -
Datasheet CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 600 V 6A 2.3 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 130pF @ 1V, 1MHz - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
46DN06B02ELEMXPSA1 Infineon Technologies

46DN06B02ELEMXPSA1

DIODE GP 600V 10450A D-ELEM-1

Infineon Technologies

5 -
Datasheet - DO-200AC, K-PUK Bulk Active Standard 600 V 10450A 980 mV @ 6000 A Standard Recovery >500ns, > 200mA (Io) - 40 mA @ 600 V - - - Clamp On BG-D-ELEM-1 180°C (Max)
IDYH10G200C5XKSA1 Infineon Technologies

IDYH10G200C5XKSA1

SIC DISCRETE

Infineon Technologies

47 -
Datasheet CoolSiC™ TO-247-4 Variant Tube Active SiC (Silicon Carbide) Schottky 2000 V 35A 1.75 V @ 10 A - - 150 µA @ 2000 V 1140pF @ 1V, 100kHz - - Through Hole PG-TO247-U04 -55°C ~ 175°C
IDYH25G200C5XKSA1 Infineon Technologies

IDYH25G200C5XKSA1

SIC DISCRETE

Infineon Technologies

56 -
Datasheet CoolSiC™ TO-247-4 Variant Tube Active SiC (Silicon Carbide) Schottky 2000 V 77A 1.75 V @ 25 A - - 375 µA @ 2000 V 1140pF @ 1V, 100kHz - - Through Hole PG-TO247-U04 -55°C ~ 175°C
IDYH40G200C5XKSA1 Infineon Technologies

IDYH40G200C5XKSA1

SIC DISCRETE

Infineon Technologies

66 -
Datasheet CoolSiC™ TO-247-4 Variant Tube Active SiC (Silicon Carbide) Schottky 2000 V 114A 1.75 V @ 40 A - - 600 µA @ 2000 V 4550pF @ 1V, 100kHz - - Through Hole PG-TO247-U04 -55°C ~ 175°C
ND89N12KHPSA1 Infineon Technologies

ND89N12KHPSA1

DIODE GEN PURP 1.2KV 89A PB20-1

Infineon Technologies

16 -
Datasheet - Module Tray Active Standard 1200 V 89A - Standard Recovery >500ns, > 200mA (Io) - 20 mA @ 1200 V - - - Chassis Mount BG-PB20-1 -40°C ~ 135°C
ND89N16KHPSA1 Infineon Technologies

ND89N16KHPSA1

DIODE GEN PURP 1.6KV 89A PB20-1

Infineon Technologies

11 -
Datasheet - Module Tray Active Standard 1600 V 89A - Standard Recovery >500ns, > 200mA (Io) - 20 mA @ 1600 V - - - Chassis Mount BG-PB20-1 -40°C ~ 135°C
D1800N48TVFXPSA1 Infineon Technologies

D1800N48TVFXPSA1

DIODE GEN PURP 4.8KV 1800A

Infineon Technologies

8 -
Datasheet - DO-200AC, K-PUK Tray Active Standard 4800 V 1800A 1.32 V @ 1500 A Standard Recovery >500ns, > 200mA (Io) - 100 mA @ 4800 V - - - Clamp On - -40°C ~ 160°C
DZ1070N22KHPSA3 Infineon Technologies

DZ1070N22KHPSA3

DIODE GP 2.2KV 1100A MODULE

Infineon Technologies

2 -
Datasheet - Module Tray Active Standard 2200 V 1100A 1.11 V @ 3000 A Standard Recovery >500ns, > 200mA (Io) - 150 mA @ 2200 V - - - Chassis Mount Module -40°C ~ 150°C
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Single Diodes FAQ

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