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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
IDM02G120C5XTMA1 Infineon Technologies

IDM02G120C5XTMA1

DIODE SIL CARB 1.2KV 2A TO252-2

Infineon Technologies

8,389 -
Datasheet CoolSiC™+ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 2A 1.65 V @ 2 A No Recovery Time > 500mA (Io) 0 ns 18 µA @ 1200 V 182pF @ 1V, 1MHz - - Surface Mount PG-TO252-2 -55°C ~ 175°C
IDWD15G120C5XKSA1 Infineon Technologies

IDWD15G120C5XKSA1

DIODE SIL CARB 1.2KV 49A TO247-2

Infineon Technologies

18 -
Datasheet CoolSiC™+ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 49A 1.65 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 124 µA @ 1200 V 1050pF @ 1V, 1MHz - - Through Hole PG-TO247-2 -55°C ~ 175°C
BAS40E6433HTMA1 Infineon Technologies

BAS40E6433HTMA1

DIODE SCHOTTKY 40V 120MA SOT23

Infineon Technologies

72 -
Datasheet - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active Schottky 40 V 120mA 1 V @ 40 mA Small Signal =< 200mA (Io), Any Speed 100 ps 1 µA @ 30 V 5pF @ 0V, 1MHz - - Surface Mount PG-SOT23 -55°C ~ 150°C
IDV08E65D2XKSA1 Infineon Technologies

IDV08E65D2XKSA1

DIODE GEN PURP 650V 8A TO220-2

Infineon Technologies

4,513 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 650 V 8A 2.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 40 µA @ 650 V - - - Through Hole PG-TO220-2 Full Pack -40°C ~ 175°C
IDP15E65D1XKSA1 Infineon Technologies

IDP15E65D1XKSA1

DIODE GEN PURP 650V 15A TO220-2

Infineon Technologies

6,367 -
Datasheet - TO-220-2 Tube Active Standard 650 V 15A 1.7 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 114 ns 40 µA @ 650 V - - - Through Hole TO-220-2 -40°C ~ 175°C
IDH08G65C5XKSA2 Infineon Technologies

IDH08G65C5XKSA2

DIODE SIL CARB 650V 8A TO220-2-1

Infineon Technologies

2,176 -
Datasheet CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 140 µA @ 650 V 250pF @ 1V, 1MHz - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
IDWD10G120C5XKSA1 Infineon Technologies

IDWD10G120C5XKSA1

DIODE SIL CARB 1.2KV 34A TO247-2

Infineon Technologies

6,810 -
Datasheet CoolSiC™+ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 34A 1.65 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 1200 V 730pF @ 1V, 1MHz - - Through Hole PG-TO247-2 -55°C ~ 175°C
AIDK10S65C5ATMA1 Infineon Technologies

AIDK10S65C5ATMA1

DISCRETE DIODES

Infineon Technologies

2,909 -
Datasheet CoolSiC™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 303pF @ 1V, 1MHz Automotive AEC-Q101 Surface Mount PG-TO263-2 -40°C ~ 175°C
D1600U45X122XPSA1 Infineon Technologies

D1600U45X122XPSA1

DIODE GP 4.5KV 1560A D12026K-1

Infineon Technologies

2,536 -
Datasheet - DO-200AE Tray Active Standard 4500 V 1560A 4.3 V @ 2500 A Standard Recovery >500ns, > 200mA (Io) - 150 mA @ 4500 V - - - Chassis Mount BG-D12026K-1 140°C (Max)
D4600U45X172XPSA1 Infineon Technologies

D4600U45X172XPSA1

DIODE GP 4.5KV 4450A D17226K-1

Infineon Technologies

1 -
Datasheet - DO-200AE Tray Active Standard 4500 V 4450A 2 V @ 2500 A Standard Recovery >500ns, > 200mA (Io) - 25 mA @ 4500 V - - - Chassis Mount BG-D17226K-1 140°C (Max)
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Single Diodes FAQ

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