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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
1N5620US/TR Microchip Technology

1N5620US/TR

DIODE GEN PURP 800V 1A D-5A

Microchip Technology

5,371 -
Datasheet - SQ-MELF, A Tape & Reel (TR) Active Standard 800 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 800 V - - - Surface Mount D-5A -65°C ~ 200°C
MNS1N5806US Microchip Technology

MNS1N5806US

DIODE GEN PURP 160V 1A A SQ-MELF

Microchip Technology

3,115 -
Datasheet - SQ-MELF, A Bulk Active Standard 160 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount A, SQ-MELF -65°C ~ 175°C
1N5807US/TR Microchip Technology

1N5807US/TR

DIODE GEN PURP 50V 3A B SQ-MELF

Microchip Technology

8,942 -
Datasheet - SQ-MELF, B Tape & Reel (TR) Active Standard 50 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V 60pF @ 10V, 1MHz - - Surface Mount B, SQ-MELF -65°C ~ 175°C
1N5809US/TR Microchip Technology

1N5809US/TR

DIODE GEN PURP 100V 3A B SQ-MELF

Microchip Technology

9,988 -
Datasheet - SQ-MELF, B Tape & Reel (TR) Active Standard 100 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V 60pF @ 10V, 1MHz - - Surface Mount B, SQ-MELF -65°C ~ 175°C
JAN1N5415US Microchip Technology

JAN1N5415US

DIODE GEN PURP 50V 3A AXIAL

Microchip Technology

6,713 -
Datasheet - B, Axial Bulk Active Standard 50 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 50 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
CDLL5195 Microchip Technology

CDLL5195

DIODE GP 180V 200MA DO213AA

Microchip Technology

7,506 -
Datasheet - DO-213AA Bulk Active Standard 180 V 200mA 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 100 µA @ 180 V - - - Surface Mount DO-213AA -65°C ~ 175°C
APT60D100SG/TR Microchip Technology

APT60D100SG/TR

DIODE GEN PURP 1KV 60A D3PAK

Microchip Technology

4,993 -
Datasheet - TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active Standard 1000 V 60A 2.5 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 280 ns 250 µA @ 1000 V - - - Surface Mount D3PAK -55°C ~ 175°C
MNS1N5811US/TR Microchip Technology

MNS1N5811US/TR

DIODE GP 150V 3A SQ-MELF B

Microchip Technology

6,349 -
Datasheet - SQ-MELF, B Bulk Active Standard 150 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 60pF @ 10V, 1MHz - - Surface Mount B, SQ-MELF -65°C ~ 175°C
JAN1N5807US Microchip Technology

JAN1N5807US

DIODE GEN PURP 50V 6A B SQ-MELF

Microchip Technology

6,768 -
Datasheet - SQ-MELF, B Bulk Active Standard 50 V 6A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANTX1N5186 Microchip Technology

JANTX1N5186

DIODE GEN PURP 100V 3A AXIAL

Microchip Technology

4,791 -
Datasheet - B, Axial Bulk Active Standard 100 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 2 µA @ 100 V - Military MIL-PRF-19500/424 Through Hole B, Axial -65°C ~ 175°C
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Single Diodes FAQ

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Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.

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