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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
JANTXV1N5616US Microchip Technology

JANTXV1N5616US

DIODE GEN PURP 400V 1A D-5A

Microchip Technology

7,107 -
Datasheet - SQ-MELF, A Bulk Discontinued at Digi-Key Standard 400 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 400 V - Military MIL-PRF-19500/429 Surface Mount D-5A -65°C ~ 200°C
JANTXV1N4944 Microchip Technology

JANTXV1N4944

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology

9,898 -
Datasheet - A, Axial Bulk Active Standard 400 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 400 V 35pF @ 12V, 1MHz Military MIL-PRF-19500/359 Through Hole A, Axial -65°C ~ 175°C
JAN1N5554US Microchip Technology

JAN1N5554US

DIODE GEN PURP 1KV 5A D-5B

Microchip Technology

2,169 -
Datasheet - SQ-MELF, E Bulk Active Standard 1000 V 5A 1.3 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 1000 V - Military MIL-PRF-19500/420 Surface Mount D-5B -65°C ~ 175°C
JAN1N5553US Microchip Technology

JAN1N5553US

DIODE GEN PURP 800V 3A D-5B

Microchip Technology

3,151 -
Datasheet - SQ-MELF, E Bulk Active Standard 800 V 3A 1.3 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 800 V - Military MIL-PRF-19500/420 Surface Mount D-5B -65°C ~ 175°C
1N5419E3 Microchip Technology

1N5419E3

DIODE GEN PURP 500V 3A AXIAL

Microchip Technology

7,250 -
Datasheet - B, Axial Bulk Active Standard 500 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 1 µA @ 500 V - - - Through Hole B, Axial -65°C ~ 175°C
JANTXV1N5418/TR Microchip Technology

JANTXV1N5418/TR

DIODE GEN PURP 400V 3A

Microchip Technology

5,101 -
Datasheet - B, Axial Tape & Reel (TR) Active Standard 400 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 400 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
1N5554US/TR Microchip Technology

1N5554US/TR

DIODE GEN PURP 1KV 3A D-5B

Microchip Technology

5,235 -
Datasheet - SQ-MELF, E Tape & Reel (TR) Active Standard 1000 V 3A 1.3 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 1000 V - - - Surface Mount D-5B -65°C ~ 175°C
JANTX1N5623US/TR Microchip Technology

JANTX1N5623US/TR

DIODE GEN PURP 1KV 1A D-5A

Microchip Technology

8,874 -
Datasheet - SQ-MELF, A Tape & Reel (TR) Active Standard 1000 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 500 nA @ 1 V 15pF @ 12V, 1MHz Military MIL-PRF-19500/429 Surface Mount D-5A -65°C ~ 175°C
JAN1N5622US Microchip Technology

JAN1N5622US

DIODE GEN PURP 1KV 1A D-5A

Microchip Technology

8,689 -
Datasheet - SQ-MELF, A Bulk Active Standard 1000 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 1000 V - Military MIL-PRF-19500/427 Surface Mount D-5A -65°C ~ 200°C
1N5804USE3 Microchip Technology

1N5804USE3

DIODE GEN PURP 100V 1A A SQ-MELF

Microchip Technology

9,459 -
Datasheet - SQ-MELF, A Bulk Active Standard 100 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 100 V 25pF @ 10V, 1MHz - - Surface Mount A, SQ-MELF -65°C ~ 175°C
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Single Diodes FAQ

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