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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
JANTXV1N1204AR Microchip Technology

JANTXV1N1204AR

DIODE GP REV 400V 12A DO203AA

Microchip Technology

174 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 400 V 12A 1.35 V @ 38 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 400 V - Military MIL-PRF-19500/260 Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 150°C
JANS1N3595US Microchip Technology

JANS1N3595US

DIODE GEN PURP 200MA B SQ-MELF

Microchip Technology

361 -
Datasheet - SQ-MELF, B Bulk Active Standard - 200mA 1 V @ 200 mA Small Signal =< 200mA (Io), Any Speed 3 µs 1 nA @ 125 V - Military MIL-S-19500-241 Surface Mount B, SQ-MELF -65°C ~ 150°C
1N4045 Microchip Technology

1N4045

DIODE GP 100V 275A DO205AB DO9

Microchip Technology

87 -
Datasheet - DO-205AB, DO-9, Stud Bulk Active Standard 100 V 275A 1.3 V @ 300 A Standard Recovery >500ns, > 200mA (Io) - 15 mA @ 100 V - - - Stud Mount DO-205AB (DO-9) -65°C ~ 190°C
UPS120E3/TR7 Microchip Technology

UPS120E3/TR7

DIODE SCHOTTKY 20V 1A POWERMITE1

Microchip Technology

308 -
Datasheet - DO-216AA Tape & Reel (TR) Active Schottky 20 V 1A 450 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 400 µA @ 20 V - - - Surface Mount Powermite 1 (DO216-AA) -55°C ~ 125°C
JANTX1N5623US Microchip Technology

JANTX1N5623US

DIODE GEN PURP 1KV 1A D-5A

Microchip Technology

34 -
Datasheet - SQ-MELF, A Bulk Active Standard 1000 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 500 nA @ 1000 V 15pF @ 12V, 1MHz Military MIL-PRF-19500/429 Surface Mount D-5A -65°C ~ 175°C
JANTX1N5819UR-1 Microchip Technology

JANTX1N5819UR-1

DIODE SCHOTTKY 45V 1A DO213AB

Microchip Technology

66 -
Datasheet - DO-213AB, MELF (Glass) Bag Active Schottky 45 V 1A 490 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 45 V 70pF @ 5V, 1MHz Military MIL-PRF-19500/586 Surface Mount DO-213AB (MELF, LL41) -65°C ~ 125°C
JANS1N5806US Microchip Technology

JANS1N5806US

DIODE GEN PURP 150V 1A D-5A

Microchip Technology

38 -
Datasheet - SQ-MELF, A Bulk Active Standard 150 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount D-5A -65°C ~ 175°C
MSC050SDA120BCT Microchip Technology

MSC050SDA120BCT

DIODE SIC 1.2KV 109A TO247-3

Microchip Technology

39 -
Datasheet - TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 1200 V 109A 1.8 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 246pF @ 400V, 1MHz - - Through Hole TO-247-3 -55°C ~ 175°C
MSC050SDA170B Microchip Technology

MSC050SDA170B

DIODE SIC 1.7KV 136A TO247-2

Microchip Technology

48 -
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1700 V 136A 1.8 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1700 V 4450pF @ 1V, 1MHz - - Through Hole TO-247 -55°C ~ 175°C
APT15DQ60KG Microchip Technology

APT15DQ60KG

DIODE GP 600V 15A TO220

Microchip Technology

477 -
Datasheet - TO-220-2 Tube Active Standard 600 V 15A 2.4 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 19 ns 25 µA @ 600 V - - - Through Hole TO-220-2 -55°C ~ 175°C
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Single Diodes FAQ

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