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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
1N6631U/TR Microchip Technology

1N6631U/TR

DIODE GEN PURP 1KV 1.4A E-MELF

Microchip Technology

5,767 -
Datasheet - SQ-MELF, B Tape & Reel (TR) Active Standard 1000 V 1.4A 1.6 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 4 µA @ 1000 V - - - Surface Mount E-MELF -65°C ~ 150°C
JANTX1N3646 Microchip Technology

JANTX1N3646

DIODE GP 1.75KV 250MA S AXIAL

Microchip Technology

8,411 -
Datasheet - S, Axial Bulk Active Standard 1750 V 250mA 5 V @ 250 mA Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1750 V - Military MIL-PRF-19500/279 Through Hole S, Axial -65°C ~ 175°C
JANTXV1N6620US Microchip Technology

JANTXV1N6620US

DIODE GEN PURP 220V 1.2A D-5A

Microchip Technology

2,170 -
Datasheet - SQ-MELF, A Bulk Active Standard 220 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 220 V - Military MIL-PRF-19500/585 Surface Mount D-5A -65°C ~ 150°C
JAN1N6076 Microchip Technology

JAN1N6076

DIODE GEN PURP 50V 1.3A E-PAK

Microchip Technology

8,709 -
Datasheet - E, Axial Bulk Active Standard 50 V 1.3A 1.76 V @ 18.8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V - Military MIL-PRF-19500/503 Through Hole E-PAK -65°C ~ 155°C
JAN1N6077 Microchip Technology

JAN1N6077

DIODE GEN PURP 100V 1.3A E-PAK

Microchip Technology

3,037 -
Datasheet - E, Axial Bulk Active Standard 100 V 1.3A 1.76 V @ 18.8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V - Military MIL-PRF-19500/503 Through Hole E-PAK -65°C ~ 155°C
JAN1N6628US Microchip Technology

JAN1N6628US

DIODE GEN PURP 660V 1.75A D-5B

Microchip Technology

2,873 -
Datasheet - SQ-MELF, E Bulk Active Standard 660 V 1.75A 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 660 V 40pF @ 10V, 1MHz Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
JAN1N6630US Microchip Technology

JAN1N6630US

DIODE GEN PURP 900V 1.4A D-5B

Microchip Technology

5,257 -
Datasheet - SQ-MELF, E Bulk Active Standard 900 V 1.4A 1.4 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 2 µA @ 900 V - Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
JAN1N6631US Microchip Technology

JAN1N6631US

DIODE GEN PURP 1.1KV 1.4A D-5B

Microchip Technology

8,033 -
Datasheet - SQ-MELF, E Bulk Active Standard 1100 V 1.4A 1.6 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 4 µA @ 1100 V 40pF @ 10V, 1MHz Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
JANTXV1N6620US/TR Microchip Technology

JANTXV1N6620US/TR

DIODE GEN PURP 220V 1.2A D-5A

Microchip Technology

6,682 -
Datasheet - SQ-MELF, A Tape & Reel (TR) Active Standard 220 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 220 V - Military MIL-PRF-19500/585 Surface Mount D-5A -65°C ~ 150°C
JANTXV1N6620U/TR Microchip Technology

JANTXV1N6620U/TR

DIODE GP 220V 1.2A A SQ-MELF

Microchip Technology

7,311 -
Datasheet - SQ-MELF, A Tape & Reel (TR) Active Standard 220 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 500 nA @ 220 V - Military MIL-PRF-19500/585 Surface Mount A, SQ-MELF -65°C ~ 150°C
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Single Diodes FAQ

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