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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
1N6073US/TR Microchip Technology

1N6073US/TR

UFR,FRR

Microchip Technology

6,509 -
Datasheet - SQ-MELF, A Tape & Reel (TR) Active Standard 50 V 850mA 2.04 V @ 9.4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 50 V - - - Surface Mount A, SQ-MELF -65°C ~ 155°C
JANS1N6642U Microchip Technology

JANS1N6642U

DIODE GEN PURP 75V 300MA D-5D

Microchip Technology

5,544 -
Datasheet - SQ-MELF, D Tray Active Standard 75 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 500 nA @ 75 V 5pF @ 0V, 1MHz Military MIL-PRF-19500/578 Surface Mount D-5D -65°C ~ 175°C
JANS1N6642US Microchip Technology

JANS1N6642US

DIODE GEN PURP 75V 300MA D-5D

Microchip Technology

7,877 -
Datasheet - D, SQ-MELF Bulk Active Standard 75 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 500 nA @ 75 V 5pF @ 0V, 1MHz Military MIL-PRF-19500/578 Surface Mount D-5D -65°C ~ 175°C
JAN1N6630US/TR Microchip Technology

JAN1N6630US/TR

UFR,FRR

Microchip Technology

4,754 -
Datasheet - SQ-MELF, E Tape & Reel (TR) Active Standard 900 V 1.4A 1.4 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 2 µA @ 900 V 40pF @ 10V, 1MHz Military MIL-PRF-19500 Surface Mount E-MELF -65°C ~ 150°C
JAN1N6631US/TR Microchip Technology

JAN1N6631US/TR

DIODE GEN PURP 1.1KV 1.4A D-5B

Microchip Technology

6,141 -
Datasheet - SQ-MELF, E Tape & Reel (TR) Active Standard 1100 V 1.4A 1.6 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 4 µA @ 1100 V 40pF @ 10V, 1MHz Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
JAN1N6631U/TR Microchip Technology

JAN1N6631U/TR

DIODE GEN PURP 1KV 1.4A E-MELF

Microchip Technology

6,443 -
Datasheet - SQ-MELF, B Tape & Reel (TR) Active Standard 1000 V 1.4A 1.6 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 4 µA @ 1000 V - Military MIL-PRF-19500/590 Surface Mount E-MELF -65°C ~ 150°C
JAN1N6628US/TR Microchip Technology

JAN1N6628US/TR

DIODE GP 660V 1.75A E-MELF

Microchip Technology

3,792 -
Datasheet - SQ-MELF, B Tape & Reel (TR) Active Standard 660 V 1.75A 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 660 V 40pF @ 10V, 1MHz Military MIL-PRF-19500/590 Surface Mount E-MELF -65°C ~ 150°C
JAN1N6630U/TR Microchip Technology

JAN1N6630U/TR

DIODE GP 990V 1.4A SQ-MELF B

Microchip Technology

5,630 -
Datasheet - SQ-MELF, B Tape & Reel (TR) Active Standard 990 V 1.4A 1.4 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 2 µA @ 990 V 40pF @ 10V, 1MHz Military MIL-PRF-19500/590 Surface Mount B, SQ-MELF -65°C ~ 150°C
JAN1N6628U/TR Microchip Technology

JAN1N6628U/TR

DIODE GP 660V 1.75A SQ-MELF

Microchip Technology

6,777 -
Datasheet - SQ-MELF, B Tape & Reel (TR) Active Standard 660 V 1.75A 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 2 µA @ 660 V 40pF @ 10V, 1MHz Military MIL-PRF-19500/590 Surface Mount B, SQ-MELF -65°C ~ 150°C
JANTXV1N6628 Microchip Technology

JANTXV1N6628

DIODE GEN PURP 660V 1.75A AXIAL

Microchip Technology

4,641 -
Datasheet - E, Axial Bulk Active Standard 660 V 1.75A 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 660 V 40pF @ 10V, 1MHz Military MIL-PRF-19500/590 Through Hole - -65°C ~ 150°C
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