PRODUCT DIRECTORY

Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
DPG30I600AHA IXYS

DPG30I600AHA

POWER DIODE DISCRETES-FRED TO-24

IXYS

4,099 -
Datasheet - - Tube Active - - - - - - - - - - - - -
STTA2006PIRG STMicroelectronics

STTA2006PIRG

DIODE GEN PURP 600V 20A DOP3I

STMicroelectronics

7,075 -
Datasheet TURBOSWITCH™ DOP3I-2 Insulated (Straight Leads) Bulk Obsolete Standard 600 V 20A 1.75 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 100 µA @ 600 V - - - Through Hole DOP3I 150°C (Max)
VS-30ETH06FP-N3 Vishay General Semiconductor - Diodes Division

VS-30ETH06FP-N3

DIODE GP 600V 30A TO220-2FP

Vishay General Semiconductor - Diodes Division

5,081 -
Datasheet FRED Pt® TO-220-2 Full Pack Tube Active Standard 600 V 30A 2.6 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 600 V - - - Through Hole TO-220-2 Full Pack -65°C ~ 175°C
20ETF06S Vishay General Semiconductor - Diodes Division

20ETF06S

DIODE GEN PURP 600V 20A TO263AB

Vishay General Semiconductor - Diodes Division

2,177 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete Standard 600 V 20A 1.3 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 160 ns 100 µA @ 600 V - - - Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
20ETF06STRL Vishay General Semiconductor - Diodes Division

20ETF06STRL

DIODE GEN PURP 600V 20A TO263AB

Vishay General Semiconductor - Diodes Division

9,646 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete Standard 600 V 20A 1.3 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 160 ns 100 µA @ 600 V - - - Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
CDLL4150 Microchip Technology

CDLL4150

DIODE GEN PURP 75V 300MA DO213AA

Microchip Technology

7,699 -
Datasheet - DO-213AA Bulk Active Standard 75 V 300mA 1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 100 nA @ 50 V 2.5pF @ 0V, 1MHz - - Surface Mount DO-213AA -65°C ~ 175°C
SCS205KGC Rohm Semiconductor

SCS205KGC

DIODE SIL CARB 1.2KV 5A TO220AC

Rohm Semiconductor

7,558 -
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 5A 1.6 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 270pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
VS-6FR40 Vishay General Semiconductor - Diodes Division

VS-6FR40

DIODE GP REV 400V 6A DO203AA

Vishay General Semiconductor - Diodes Division

4,693 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 400 V 6A 1.1 V @ 19 A Standard Recovery >500ns, > 200mA (Io) - 12 mA @ 400 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
1N4370A/TR Microchip Technology

1N4370A/TR

DIODE DO35

Microchip Technology

6,789 -
Datasheet - DO-204AH, DO-35, Axial Tape & Reel (TR) Active - - - 1.1 V @ 200 mA - - 100 µA @ 1 V - - - Through Hole DO-204AH (DO-35) -
UPR60E3/TR13 Microchip Technology

UPR60E3/TR13

DIODE GEN PURP 600V 2A POWERMITE

Microchip Technology

9,870 -
Datasheet - DO-216AA Tape & Reel (TR) Active Standard 600 V 2A 1.6 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 600 V - - - Surface Mount Powermite -55°C ~ 150°C
DMA50I1600HA IXYS

DMA50I1600HA

DIODE GEN PURP 1.6KV 50A TO247

IXYS

2,981 -
Datasheet - TO-247-2 Tube Active Standard 1600 V 50A 1.3 V @ 50 A Standard Recovery >500ns, > 200mA (Io) - 40 µA @ 1600 V 19pF @ 400V, 1MHz - - Through Hole TO-247 -55°C ~ 175°C
PCFF30H120SWF onsemi

PCFF30H120SWF

1200V/30A GEN7 FRD HS SAWN-ON-FO

onsemi

7,294 -
Datasheet - Die Tray Active Standard 1200 V 30A 1.9 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 222 ns 16 A @ 1200 V - - - Surface Mount Wafer -40°C ~ 175°C
65PQ015 Vishay General Semiconductor - Diodes Division

65PQ015

DIODE SCHOTTKY 15V 65A TO247AC

Vishay General Semiconductor - Diodes Division

9,531 -
Datasheet - TO-247-3 Tube Obsolete Schottky 15 V 65A 500 mV @ 65 A Fast Recovery =< 500ns, > 200mA (Io) - 18 mA @ 15 V - - - Through Hole TO-247AC -55°C ~ 125°C
VS-65APF06L-M3 Vishay General Semiconductor - Diodes Division

VS-65APF06L-M3

DIODE GEN PURP 600V 65A TO247AD

Vishay General Semiconductor - Diodes Division

7,773 -
Datasheet - TO-247-3 Tube Active Standard 600 V 65A 1.32 V @ 65 A Fast Recovery =< 500ns, > 200mA (Io) 180 ns 100 µA @ 600 V - - - Through Hole TO-247AD -40°C ~ 150°C
VS-65EPF06L-M3 Vishay General Semiconductor - Diodes Division

VS-65EPF06L-M3

DIODE GEN PURP 600V 65A TO247AD

Vishay General Semiconductor - Diodes Division

8,272 -
Datasheet - TO-247-2 Tube Active Standard 600 V 65A 1.32 V @ 65 A Fast Recovery =< 500ns, > 200mA (Io) 180 ns 100 µA @ 600 V - - - Through Hole TO-247AD -40°C ~ 150°C
TSN525M60 S3G Taiwan Semiconductor Corporation

TSN525M60 S3G

DIODE SCHOTTKY 60V 25A 8DFN

Taiwan Semiconductor Corporation

8,040 -
Datasheet - 8-PowerLDFN Tape & Reel (TR) Active Schottky 60 V 25A 630 mV @ 25 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 60 V - - - Surface Mount 8-PDFN (5x6) -55°C ~ 150°C
1N4154-1/TR Microchip Technology

1N4154-1/TR

DIODE GEN PURP 35V 200MA DO35

Microchip Technology

5,385 -
Datasheet - DO-204AH, DO-35, Axial Tape & Reel (TR) Active Standard 35 V 200mA 1 V @ 30 mA Small Signal =< 200mA (Io), Any Speed 2 ns 100 nA @ 25 V - - - Through Hole DO-204AH (DO-35) -65°C ~ 150°C
1N4154-1E3 Microchip Technology

1N4154-1E3

DIODE GEN PURP 35V 200MA DO35

Microchip Technology

8,804 -
Datasheet - DO-204AH, DO-35, Axial Bulk Active Standard 35 V 200mA 1 V @ 30 mA Small Signal =< 200mA (Io), Any Speed 2 ns 100 nA @ 25 V - - - Through Hole DO-204AH (DO-35) -65°C ~ 150°C
1N3595 Microchip Technology

1N3595

DIODE GEN PURP 125V 200MA AXIAL

Microchip Technology

9,867 -
Datasheet - Axial Bulk Active Standard 125 V 200mA 1 V @ 200 mA Small Signal =< 200mA (Io), Any Speed 3 µs 1 nA @ 125 V - - - Through Hole Axial -65°C ~ 150°C
WB100FC120ALZ WeEn Semiconductors

WB100FC120ALZ

WB100FC120AL/NAU000/NO MARK*CHIP

WeEn Semiconductors

4,923 -
Datasheet - Die Bulk Active Standard 1200 V 100A 3.3 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 250 µA @ 1200 V - - - Surface Mount Wafer 175°C
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COMPONENT SOURCING SUPPORT

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Single Diodes FAQ

What Single Diodes components can I source from EGOO?

You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete Single Diodes parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

Does EGOO support BOM and small-batch sourcing?

Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

How do I request pricing and availability?

Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.

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