PRODUCT DIRECTORY

Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
19TQ015STRL Vishay General Semiconductor - Diodes Division

19TQ015STRL

DIODE SCHOTTKY 15V 19A TO263AB

Vishay General Semiconductor - Diodes Division

8,611 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete Schottky 15 V 19A 360 mV @ 19 A Fast Recovery =< 500ns, > 200mA (Io) - 1.5 mA @ 15 V - - - Surface Mount TO-263AB (D2PAK) -55°C ~ 125°C
19TQ015STRR Vishay General Semiconductor - Diodes Division

19TQ015STRR

DIODE SCHOTTKY 15V 19A TO263AB

Vishay General Semiconductor - Diodes Division

4,955 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete Schottky 15 V 19A 360 mV @ 19 A Fast Recovery =< 500ns, > 200mA (Io) - 1.5 mA @ 15 V - - - Surface Mount TO-263AB (D2PAK) -55°C ~ 125°C
CBR08P65D Bruckewell

CBR08P65D

SIC SCHOTTKY DIODE,650V,8A,TO-25

Bruckewell

13 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active SiC (Silicon Carbide) Schottky 650 V 29A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 25 µA @ 650 V - Automotive AEC-Q101 Surface Mount TO-252-2L -55°C ~ 175°C
RURG30120 onsemi

RURG30120

DIODE GEN PURP 1.2KV 30A TO247-2

onsemi

4,944 -
Datasheet - TO-247-2 Tube Obsolete Avalanche 1200 V 30A 2.1 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 250 µA @ 1200 V - - - Through Hole TO-247-2 -65°C ~ 175°C
VS-30APF06-M3 Vishay General Semiconductor - Diodes Division

VS-30APF06-M3

DIODE GEN PURP 600V 30A TO247AC

Vishay General Semiconductor - Diodes Division

7,857 -
Datasheet - TO-247-3 Tube Active Standard 600 V 30A 1.41 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 160 ns 100 µA @ 600 V - - - Through Hole TO-247AC -40°C ~ 150°C
VS-30APF12-M3 Vishay General Semiconductor - Diodes Division

VS-30APF12-M3

DIODE GEN PURP 1.2KV 30A TO247AC

Vishay General Semiconductor - Diodes Division

6,452 -
Datasheet - TO-247-3 Tube Active Standard 1200 V 30A 1.41 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 450 ns 100 µA @ 1200 V - - - Through Hole TO-247AC -40°C ~ 150°C
VS-30APF02-M3 Vishay General Semiconductor - Diodes Division

VS-30APF02-M3

DIODE SCHOTTKY 100V 3A TO247AC

Vishay General Semiconductor - Diodes Division

6,690 -
Datasheet - TO-247-3 Tube Active Schottky 100 V 3A 790 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 100 V 115pF @ 5V, 1MHz - - Through Hole TO-247AC -55°C ~ 175°C
VS-30APF04-M3 Vishay General Semiconductor - Diodes Division

VS-30APF04-M3

DIODE GEN PURP 400V 30A TO247AC

Vishay General Semiconductor - Diodes Division

4,095 -
Datasheet - TO-247-3 Tube Active Standard 400 V 30A 1.41 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 100 µA @ 400 V - - - Through Hole TO-247AC -40°C ~ 150°C
VS-30EPF02-M3 Vishay General Semiconductor - Diodes Division

VS-30EPF02-M3

DIODE GP 200V 30A TO247AC

Vishay General Semiconductor - Diodes Division

6,406 -
Datasheet - TO-247-2 Tube Active Standard 200 V 30A 1.41 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 100 µA @ 200 V - - - Through Hole TO-247AC Modified -40°C ~ 150°C
VS-30EPF04-M3 Vishay General Semiconductor - Diodes Division

VS-30EPF04-M3

DIODE GP 400V 30A TO247AC

Vishay General Semiconductor - Diodes Division

9,746 -
Datasheet - TO-247-2 Tube Active Standard 400 V 30A 1.41 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 400 V - - - Through Hole TO-247AC Modified -40°C ~ 150°C
JANTXV1N4150-1 Microchip Technology

JANTXV1N4150-1

DIODE GEN PURP 50V 200MA DO35

Microchip Technology

3,512 -
Datasheet - DO-204AH, DO-35, Axial Bulk Active Standard 50 V 200mA 1 V @ 200 mA Small Signal =< 200mA (Io), Any Speed 4 ns 100 nA @ 50 V - Military MIL-PRF-19500/231 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
1N4371A/TR Microchip Technology

1N4371A/TR

DIODE DO35

Microchip Technology

2,324 -
Datasheet - DO-204AH, DO-35, Axial Tape & Reel (TR) Active - - - 1.1 V @ 200 mA - - 75 µA @ 1 V - - - Through Hole DO-204AH (DO-35) -
1N4454UR-1/TR Microchip Technology

1N4454UR-1/TR

DIODE GEN PURP 50V 200MA DO213AA

Microchip Technology

7,083 -
Datasheet - DO-213AA Tape & Reel (TR) Active Standard 50 V 200mA 1 V @ 10 mA Small Signal =< 200mA (Io), Any Speed 4 ns 100 nA @ 50 V - - - Surface Mount DO-213AA -55°C ~ 175°C
CD4150V Microchip Technology

CD4150V

DIODE GEN PURP 50V 200MA DIE

Microchip Technology

2,445 -
Datasheet - Die Bulk Active Standard 50 V 200mA 1 V @ 200 mA Small Signal =< 200mA (Io), Any Speed 4 ns 100 nA @ 50 V 2.5pF @ 0V, 1MHz - - Surface Mount Die -55°C ~ 175°C
UPS1040/TR13 Microchip Technology

UPS1040/TR13

DIODE SCHOTTKY 40V 10A POWERMITE

Microchip Technology

4,975 -
Datasheet - DO-216AA Tape & Reel (TR) Active Schottky 40 V 10A 490 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 300 µA @ 35 V 700pF @ 4V, 1MHz - - Surface Mount Powermite -55°C ~ 150°C
SICB10120Y-TP Micro Commercial Co

SICB10120Y-TP

SCHOTTKY DIODES

Micro Commercial Co

7,541 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.54 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 13 µA @ 1200 V 700pF @ 0V, 1MHz - - Surface Mount D2PAK -55°C ~ 175°C
VS-16FR40 Vishay General Semiconductor - Diodes Division

VS-16FR40

DIODE GEN PURP 400V 16A DO203AA

Vishay General Semiconductor - Diodes Division

4,779 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 400 V 16A 1.23 V @ 50 A Standard Recovery >500ns, > 200mA (Io) - 12 mA @ 400 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
30CPF06 Vishay General Semiconductor - Diodes Division

30CPF06

DIODE GEN PURP 600V 30A TO247AC

Vishay General Semiconductor - Diodes Division

7,273 -
Datasheet - TO-247-3 Tube Obsolete Standard 600 V 30A 1.41 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 160 ns 100 µA @ 600 V - - - Through Hole TO-247AC -40°C ~ 150°C
30EPF06 Vishay General Semiconductor - Diodes Division

30EPF06

DIODE GP 600V 30A TO247AC

Vishay General Semiconductor - Diodes Division

4,027 -
Datasheet - TO-247-2 Tube Obsolete Standard 600 V 30A 1.41 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 160 ns 100 µA @ 600 V - - - Through Hole TO-247AC Modified -40°C ~ 150°C
BYC60W-1200PQ WeEn Semiconductors

BYC60W-1200PQ

BYC60W-1200P/TO247-2L/STANDARD M

WeEn Semiconductors

4,320 -
Datasheet - TO-247-2 Bulk Active Standard 1200 V 60A 3.3 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 96 ns 250 µA @ 1200 V - - - Through Hole TO-247-2 175°C
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COMPONENT SOURCING SUPPORT

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Single Diodes FAQ

What Single Diodes components can I source from EGOO?

You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

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Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

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Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

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