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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
PCDP0465GB_T0_00601 Panjit International Inc.

PCDP0465GB_T0_00601

650V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

1,931 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 4A 1.6 V @ 4 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 650 V 260pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
PSDH60120S1_T0_00001 Panjit International Inc.

PSDH60120S1_T0_00001

TO-247AD-2LD, FAST

Panjit International Inc.

3,904 -
Datasheet - TO-247-2 Tube Not For New Designs Standard 1200 V 60A 3.2 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 255 ns 250 µA @ 1200 V - - - Through Hole TO-247AD-2 -55°C ~ 150°C
PSDH6060S1_T0_00001 Panjit International Inc.

PSDH6060S1_T0_00001

TO-247AD-2LD, FAST

Panjit International Inc.

1,347 -
Datasheet - TO-247-2 Tube Active Standard 600 V 60A 2.3 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 85 ns 250 µA @ 600 V - - - Through Hole TO-247AD-2 -55°C ~ 150°C
PCDF0665G1_T0_00601 Panjit International Inc.

PCDF0665G1_T0_00601

650V/6A THROUGH HOLE SILICON CAR

Panjit International Inc.

2,000 -
Datasheet - TO-220-2 Full Pack, Isolated Tab Tube Active SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 232pF @ 1V, 1MHz - - Through Hole ITO-220AC -55°C ~ 175°C
PGR9016PT_T0_00301 Panjit International Inc.

PGR9016PT_T0_00301

STANDARD REVERSE RECOVERY POWER

Panjit International Inc.

2,100 -
Datasheet - - Tube Active - - - - - - - - - - - - -
PCDD0665GB_L2_00601 Panjit International Inc.

PCDD0665GB_L2_00601

650V/6A IN TO-252AA PACKAGE SILI

Panjit International Inc.

3,000 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A 1.6 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 373pF @ 1V, 1MHz - - Surface Mount TO-252AA -55°C ~ 175°C
PCDP0865GC_T0_00601 Panjit International Inc.

PCDP0865GC_T0_00601

650V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

2,000 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 8A 1.8 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 650 V 260pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
PCDP0665GB_T0_00601 Panjit International Inc.

PCDP0665GB_T0_00601

650V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

2,000 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 6A 1.6 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 650 V 271pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
PCDD0865GB_L2_00601 Panjit International Inc.

PCDD0865GB_L2_00601

650V/8A IN TO-252AA PACKAGE SILI

Panjit International Inc.

2,990 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 8A 1.6 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 527pF @ 1V, 1MHz - - Surface Mount TO-252AA -55°C ~ 175°C
PCDG10120GB_L2_00601 Panjit International Inc.

PCDG10120GB_L2_00601

SIC DIODE 1200V/10A IN TO-252AA

Panjit International Inc.

6,000 -
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - -
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Single Diodes FAQ

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