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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
PCDF0865G1_T0_00601 Panjit International Inc.

PCDF0865G1_T0_00601

650V/8A THROUGH HOLE SILICON CAR

Panjit International Inc.

2,000 -
Datasheet - TO-220-2 Full Pack, Isolated Tab Tube Active SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 300pF @ 1V, 1MHz - - Through Hole ITO-220AC -55°C ~ 175°C
PCDP0865GB_T0_00601 Panjit International Inc.

PCDP0865GB_T0_00601

650V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

2,000 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 8A 1.6 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 650 V 372pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
PCDP1065GC_T0_00601 Panjit International Inc.

PCDP1065GC_T0_00601

650V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

1,961 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.8 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 650 V 271pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
PCDD1065GB_L2_00601 Panjit International Inc.

PCDD1065GB_L2_00601

650V/10A IN TO-252AA PACKAGE SIL

Panjit International Inc.

3,000 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.6 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 610pF @ 1V, 1MHz - - Surface Mount TO-252AA -55°C ~ 175°C
PCDF1065G1_T0_00601 Panjit International Inc.

PCDF1065G1_T0_00601

650V/10A THROUGH HOLE SILICON CA

Panjit International Inc.

2,000 -
Datasheet - TO-220-2 Full Pack, Isolated Tab Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 70 µA @ 650 V 380pF @ 1V, 1MHz - - Through Hole ITO-220AC -55°C ~ 175°C
PCDP1065GB_T0_00601 Panjit International Inc.

PCDP1065GB_T0_00601

650V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

1,975 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.6 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 650 V 446pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
PCDP1265GC_T0_00601 Panjit International Inc.

PCDP1265GC_T0_00601

650V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

2,000 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 12A 1.8 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 650 V 372pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
PCDP15120GB_T0_00601 Panjit International Inc.

PCDP15120GB_T0_00601

SIC DIODE 1200V/15A IN TO-220AC

Panjit International Inc.

2,000 -
Datasheet - - Tube Active - - - - - - - - - - - - -
PCDP1265GB_T0_00601 Panjit International Inc.

PCDP1265GB_T0_00601

650V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

2,000 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 12A 1.6 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 650 V 529pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
PCDP1665GC_T0_00601 Panjit International Inc.

PCDP1665GC_T0_00601

650V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

2,000 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 16A 1.8 V @ 16 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 650 V 446pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
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Single Diodes FAQ

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