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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
UJ3D1725K2 Qorvo

UJ3D1725K2

DIODE SIL CARB 1.7KV 25A TO247-2

Qorvo

4,349 -
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1700 V 25A 1.7 V @ 25 A No Recovery Time > 500mA (Io) 0 ns 360 µA @ 1700 V 1500pF @ 1V, 1MHz Automotive AEC-Q101 Through Hole TO-247-2 -55°C ~ 175°C
UJ3D1250K2 Qorvo

UJ3D1250K2

DIODE SIL CARB 1.2KV 50A TO247-2

Qorvo

14,813 -
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 50A 1.7 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 400 µA @ 1200 V 2340pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
UJ3D1210TS Qorvo

UJ3D1210TS

DIODE SIL CARB 1.2KV 10A TO220-2

Qorvo

8,990 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.6 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 110 µA @ 1200 V 510pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
UJ3D06560KSD Qorvo

UJ3D06560KSD

DIODE SIL CARB 650V 30A TO247-3

Qorvo

6,369 -
Datasheet - TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 30A 1.7 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 740 µA @ 650 V 1980pF @ 1V, 1MHz - - Through Hole TO-247-3 -55°C ~ 175°C
UJ3D1250K Qorvo

UJ3D1250K

DIODE SIL CARB 1.2KV 50A TO247-3

Qorvo

6,427 -
Datasheet - TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 1200 V 50A 1.7 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 400 µA @ 1200 V 2340pF @ 1V, 1MHz - - Through Hole TO-247-3 -55°C ~ 175°C
UJ3D1202TS Qorvo

UJ3D1202TS

DIODE SIL CARB 1.2KV 2A TO220-2

Qorvo

16,006 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 2A 1.6 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 22 µA @ 1200 V 109pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
UJ3D06506TS Qorvo

UJ3D06506TS

DIODE SIL CARB 650V 6A TO220-2

Qorvo

57,316 -
Datasheet Gen-III TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 196pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
UJ3D06510TS Qorvo

UJ3D06510TS

DIODE SIL CARB 650V 10A TO220-2

Qorvo

11,657 -
Datasheet Gen-III TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 327pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
UJ3D1205TS Qorvo

UJ3D1205TS

DIODE SIL CARB 1.2KV 5A TO220-2

Qorvo

27,393 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 5A 1.6 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 55 µA @ 1200 V 250pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
UJ3D06520TS Qorvo

UJ3D06520TS

DIODE SIL CARB 650V 20A TO220-2

Qorvo

6,004 -
Datasheet Gen-III TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 120 µA @ 650 V 654pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
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Single Diodes FAQ

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Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.

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