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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
UJ3D1220KSD Qorvo

UJ3D1220KSD

DIODE SIL CARB 1.2KV 10A TO247-3

Qorvo

1,188 -
Datasheet - TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.6 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 220 µA @ 1200 V 1020pF @ 1V, 1MHz - - Through Hole TO-247-3 -55°C ~ 175°C
UJ3D06504TS Qorvo

UJ3D06504TS

DIODE SIL CARB 650V 4A TO220-2

Qorvo

22,764 -
Datasheet Gen-III TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 4A 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 25 µA @ 650 V 118pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
UJ3D06508TS Qorvo

UJ3D06508TS

DIODE SIL CARB 650V 8A TO220-2

Qorvo

28,148 -
Datasheet Gen-III TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 250pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
UJ3D06512TS Qorvo

UJ3D06512TS

DIODE SIL CARB 650V 12A TO220-2

Qorvo

10,601 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 12A 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 650 V 392pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
UJ3D06516TS Qorvo

UJ3D06516TS

DIODE SIL CARB 650V 16A TO220-2

Qorvo

938 -
Datasheet Gen-III TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 16A 1.7 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 500pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
UJ3D1210K2 Qorvo

UJ3D1210K2

DIODE SIL CARB 1.2KV 10A TO247-2

Qorvo

7,101 -
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.6 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 110 µA @ 1200 V 510pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
UJ3D06530TS Qorvo

UJ3D06530TS

DIODE SIL CARB 650V 30A TO220-2

Qorvo

7,715 -
Datasheet Gen-III TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 30A 1.7 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 370 µA @ 650 V 990pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
UJ3D1220K2 Qorvo

UJ3D1220K2

DIODE SIL CARB 1.2KV 20A TO247-2

Qorvo

327 -
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 20A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 190 µA @ 1200 V 810pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
UJ3D06520KSD Qorvo

UJ3D06520KSD

DIODE SIL CARB 650V 10A TO247-3

Qorvo

9,218 -
Datasheet Gen-III TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 120 µA @ 650 V 654pF @ 1V, 1MHz - - Through Hole TO-247-3 -55°C ~ 175°C
UJ3D1210KSD Qorvo

UJ3D1210KSD

DIODE SIL CARB 1.2KV 5A TO247-3

Qorvo

528 -
Datasheet - TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 1200 V 5A 1.6 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 110 µA @ 1200 V 500pF @ 1V, 1MHz - - Through Hole TO-247-3 -55°C ~ 175°C
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Single Diodes FAQ

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