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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
GP3D005A170B SemiQ

GP3D005A170B

DIODE SIL CARB 1.7KV 21A TO247-2

SemiQ

1,517 -
Datasheet Amp+™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1700 V 21A 1.65 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1700 V 347pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
GP3D010A170B SemiQ

GP3D010A170B

DIODE SIL CARB 1.7KV 39A TO247-2

SemiQ

360 -
Datasheet Amp+™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1700 V 39A 1.65 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 1700 V 699pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
GP3D030A065B SemiQ

GP3D030A065B

DIODE SIL CARB 650V 30A TO247-2

SemiQ

142 -
Datasheet Amp+™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 30A 1.65 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 75 µA @ 650 V 1247pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
GP3D006A065A SemiQ

GP3D006A065A

DIODE SIL CARB 650V 20A TO220-2L

SemiQ

50 -
Datasheet Amp+™ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.55 V @ 6 A No Recovery Time > 500mA (Io) - 15 µA @ 650 V 229pF @ 1V, 1MHz - - Through Hole TO-220-2L -55°C ~ 175°C
GP3D020A170B SemiQ

GP3D020A170B

DIODE SIL CARB 1.7KV 67A TO247-2

SemiQ

39 -
Datasheet Amp+™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1700 V 67A 1.65 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 1700 V 1403pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
GP3D050A120B SemiQ

GP3D050A120B

DIODE SIL CARB 1.2KV 50A TO247-2

SemiQ

44 -
Datasheet Amp+™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 50A 1.7 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 3040pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
GP3D020A065B SemiQ

GP3D020A065B

DIODE SIL CARB 650V 20A TO247-2

SemiQ

99 -
Datasheet Amp+™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 835pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
GP3D010A120A SemiQ

GP3D010A120A

DIODE SIL CARB 1.2KV 10A TO220-2

SemiQ

6 -
Datasheet Amp+™ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.65 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1200 V 608pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
GP3D015A120A SemiQ

GP3D015A120A

DIODE SIL CARB 1.2KV 15A TO220-2

SemiQ

10 -
Datasheet Amp+™ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 15A 1.6 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 1200 V 962pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
GP2D003A060C SemiQ

GP2D003A060C

DIODE SIL CARB 600V 3A TO252-2L

SemiQ

8,478 -
Datasheet Amp+™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 600 V 3A 1.65 V @ 3 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 600 V 158pF @ 1V, 1MHz - - Surface Mount TO-252-2L (DPAK) -55°C ~ 175°C
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Single Diodes FAQ

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