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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
GP3D015A120B SemiQ

GP3D015A120B

DIODE SIL CARB 1.2KV 15A TO247-2

SemiQ

7,032 -
Datasheet Amp+™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 15A 1.6 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 1200 V 962pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
GP3D040A065U SemiQ

GP3D040A065U

DIODE SIL CARB 650V 40A TO247-3

SemiQ

3,520 -
Datasheet Amp+™ TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 40A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 835pF @ 1V, 1MHz - - Through Hole TO-247-3 -55°C ~ 175°C
GP3D020A120B SemiQ

GP3D020A120B

DIODE SIL CARB 1.2KV 20A TO247-2

SemiQ

4,590 -
Datasheet Amp+™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 20A 1.65 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 1200 V 1179pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
GP3D050A065B SemiQ

GP3D050A065B

DIODE SIL CARB 650V 135A TO247-2

SemiQ

6,200 -
Datasheet Amp+™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 135A 1.6 V @ 50 A No Recovery Time > 500mA (Io) - 125 µA @ 650 V 1946pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
GP3D030A120B SemiQ

GP3D030A120B

DIODE SIL CARB 1.2KV 30A TO247-2

SemiQ

9,900 -
Datasheet Amp+™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 30A 1.7 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 1200 V 1762pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
GP2D050A120B SemiQ

GP2D050A120B

DIODE SIL CARB 1.2KV 50A TO247-2

SemiQ

8,045 -
Datasheet Amp+™ TO-247-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 1200 V 50A 1.8 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 3174pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
GP2D003A065A SemiQ

GP2D003A065A

DIODE SIL CARB 650V 3A TO220-2

SemiQ

7,306 -
Datasheet Amp+™ TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 3A 1.65 V @ 3 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 650 V 158pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
GP2D005A120A SemiQ

GP2D005A120A

DIODE SIL CARB 1.2KV 5A TO220-2

SemiQ

9,665 -
Datasheet Amp+™ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 1200 V 5A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 1200 V 317pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
GP2D005A120C SemiQ

GP2D005A120C

DIODE SIL CARB 1.2KV 5A TO252-2L

SemiQ

8,410 -
Datasheet Amp+™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 1200 V 5A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 1200 V 317pF @ 1V, 1MHz - - Surface Mount TO-252-2L (DPAK) -55°C ~ 175°C
GP2D005A170B SemiQ

GP2D005A170B

DIODE SIL CARB 1.7KV 5A TO247-2

SemiQ

3,053 -
Datasheet Amp+™ TO-247-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 1700 V 5A 1.75 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 1700 V 406pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
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Single Diodes FAQ

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