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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
1N5401GHA0G Taiwan Semiconductor Corporation

1N5401GHA0G

DIODE GEN PURP 100V 3A DO201AD

Taiwan Semiconductor Corporation

2,389 -
Datasheet - DO-201AD, Axial Tape & Box (TB) Discontinued at Digi-Key Standard 100 V 3A 1.1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 100 V 25pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole DO-201AD -55°C ~ 150°C
1N5402G A0G Taiwan Semiconductor Corporation

1N5402G A0G

DIODE GEN PURP 200V 3A DO201AD

Taiwan Semiconductor Corporation

9,320 -
Datasheet - DO-201AD, Axial Tape & Box (TB) Active Standard 200 V 3A 1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 200 V 25pF @ 4V, 1MHz - - Through Hole DO-201AD -55°C ~ 150°C
1N5402GHA0G Taiwan Semiconductor Corporation

1N5402GHA0G

DIODE GEN PURP 200V 3A DO201AD

Taiwan Semiconductor Corporation

5,431 -
Datasheet - DO-201AD, Axial Tape & Box (TB) Active Standard 200 V 3A 1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 200 V 25pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole DO-201AD -55°C ~ 150°C
1N5406GHA0G Taiwan Semiconductor Corporation

1N5406GHA0G

DIODE GEN PURP 600V 3A DO201AD

Taiwan Semiconductor Corporation

5,199 -
Datasheet - DO-201AD, Axial Tape & Box (TB) Active Standard 600 V 3A 1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V 25pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole DO-201AD -55°C ~ 150°C
1N5407GHA0G Taiwan Semiconductor Corporation

1N5407GHA0G

DIODE GEN PURP 800V 3A DO201AD

Taiwan Semiconductor Corporation

7,699 -
Datasheet - DO-201AD, Axial Tape & Box (TB) Discontinued at Digi-Key Standard 800 V 3A 1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 800 V 25pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole DO-201AD -55°C ~ 150°C
1N5822 A0G Taiwan Semiconductor Corporation

1N5822 A0G

DIODE SCHOTTKY 40V 3A DO201AD

Taiwan Semiconductor Corporation

4,902 -
Datasheet - DO-201AD, Axial Tape & Box (TB) Active Schottky 40 V 3A 525 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 40 V 200pF @ 4V, 1MHz - - Through Hole DO-201AD -55°C ~ 125°C
1T4G A0G Taiwan Semiconductor Corporation

1T4G A0G

DIODE GEN PURP 400V 1A TS-1

Taiwan Semiconductor Corporation

7,410 -
Datasheet - T-18, Axial Tape & Box (TB) Active Standard 400 V 1A 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 400 V 10pF @ 4V, 1MHz - - Through Hole TS-1 -55°C ~ 150°C
1T5G A0G Taiwan Semiconductor Corporation

1T5G A0G

DIODE GEN PURP 600V 1A TS-1

Taiwan Semiconductor Corporation

4,347 -
Datasheet - T-18, Axial Tape & Box (TB) Active Standard 600 V 1A 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V 10pF @ 4V, 1MHz - - Through Hole TS-1 -55°C ~ 150°C
1T7G A0G Taiwan Semiconductor Corporation

1T7G A0G

DIODE GEN PURP 1A TS-1

Taiwan Semiconductor Corporation

5,506 -
Datasheet - T-18, Axial Tape & Box (TB) Active Standard 1000 V 1A 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1000 V 10pF @ 4V, 1MHz - - Through Hole TS-1 -55°C ~ 150°C
2A02G A0G Taiwan Semiconductor Corporation

2A02G A0G

DIODE GEN PURP 100V 2A DO204AC

Taiwan Semiconductor Corporation

4,489 -
Datasheet - DO-204AC, DO-15, Axial Tape & Box (TB) Active Standard 100 V 2A 1.1 V @ 2 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 100 V 15pF @ 4V, 1MHz - - Through Hole DO-204AC (DO-15) -55°C ~ 150°C
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