REFINED COMPONENT RESULTS

Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
MUR160HA0G Taiwan Semiconductor Corporation

MUR160HA0G

DIODE GEN PURP 600V 1A DO204AC

Taiwan Semiconductor Corporation

5,269 -
Datasheet - DO-204AC, DO-15, Axial Tape & Box (TB) Active Standard 600 V 1A 1.25 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 600 V 27pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole DO-204AC (DO-15) -55°C ~ 175°C
P2500M A0G Taiwan Semiconductor Corporation

P2500M A0G

DIODE GEN PURP 25A DO201AD

Taiwan Semiconductor Corporation

6,739 -
Datasheet - DO-201AD, Axial Tape & Box (TB) Active Standard 1000 V 25A 870 mV @ 5 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1000 V - - - Through Hole DO-201AD -50°C ~ 175°C
P2500MHA0G Taiwan Semiconductor Corporation

P2500MHA0G

DIODE GEN PURP 25A DO201AD

Taiwan Semiconductor Corporation

7,886 -
Datasheet - DO-201AD, Axial Tape & Box (TB) Active Standard 1000 V 25A 870 mV @ 5 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1000 V - Automotive AEC-Q101 Through Hole DO-201AD -50°C ~ 175°C
SF2L6GHA0G Taiwan Semiconductor Corporation

SF2L6GHA0G

DIODE GEN PURP 400V 2A DO204AC

Taiwan Semiconductor Corporation

9,215 -
Datasheet - DO-204AC, DO-15, Axial Tape & Box (TB) Active Standard 400 V 2A 1.3 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 1 µA @ 400 V 20pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole DO-204AC (DO-15) -55°C ~ 150°C
SF33G A0G Taiwan Semiconductor Corporation

SF33G A0G

DIODE GEN PURP 150V 3A DO201AD

Taiwan Semiconductor Corporation

4,416 -
Datasheet - DO-201AD, Axial Tape & Box (TB) Active Standard 150 V 3A 950 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 150 V 80pF @ 4V, 1MHz - - Through Hole DO-201AD -55°C ~ 150°C
SF61GHA0G Taiwan Semiconductor Corporation

SF61GHA0G

DIODE GEN PURP 50V 6A DO201AD

Taiwan Semiconductor Corporation

8,438 -
Datasheet - DO-201AD, Axial Tape & Box (TB) Active Standard 50 V 6A 975 mV @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 50 V 100pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole DO-201AD -55°C ~ 150°C
SF67GHA0G Taiwan Semiconductor Corporation

SF67GHA0G

DIODE GEN PURP 500V 6A DO201AD

Taiwan Semiconductor Corporation

2,939 -
Datasheet - DO-201AD, Axial Tape & Box (TB) Active Standard 500 V 6A 1.7 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 500 V 50pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole DO-201AD -55°C ~ 150°C
SFT14G A0G Taiwan Semiconductor Corporation

SFT14G A0G

DIODE GEN PURP 200V 1A TS-1

Taiwan Semiconductor Corporation

3,384 -
Datasheet - T-18, Axial Tape & Box (TB) Active Standard 200 V 1A 950 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 200 V 20pF @ 4V, 1MHz - - Through Hole TS-1 -55°C ~ 150°C
SK12H45 A0G Taiwan Semiconductor Corporation

SK12H45 A0G

DIODE SCHOTTKY 45V 12A DO201AD

Taiwan Semiconductor Corporation

6,103 -
Datasheet - DO-201AD, Axial Tape & Box (TB) Active Schottky 45 V 12A 550 mV @ 12 A Fast Recovery =< 500ns, > 200mA (Io) - 120 µA @ 45 V - - - Through Hole DO-201AD 200°C (Max)
SR1202 A0G Taiwan Semiconductor Corporation

SR1202 A0G

DIODE SCHOTTKY 20V 12A DO201AD

Taiwan Semiconductor Corporation

2,366 -
Datasheet - DO-201AD, Axial Tape & Box (TB) Active Schottky 20 V 12A 550 mV @ 12 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 20 V - - - Through Hole DO-201AD -50°C ~ 150°C
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Single Diodes FAQ

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