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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
SR810HA0G Taiwan Semiconductor Corporation

SR810HA0G

DIODE SCHOTTKY 100V 8A DO201AD

Taiwan Semiconductor Corporation

4,982 -
Datasheet - DO-201AD, Axial Tape & Box (TB) Active Schottky 100 V 8A 920 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 100 V - Automotive AEC-Q101 Through Hole DO-201AD -55°C ~ 150°C
SRT12HA0G Taiwan Semiconductor Corporation

SRT12HA0G

DIODE SCHOTTKY 20V 1A TS-1

Taiwan Semiconductor Corporation

9,050 -
Datasheet - T-18, Axial Tape & Box (TB) Active Schottky 20 V 1A 550 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 20 V - Automotive AEC-Q101 Through Hole TS-1 -55°C ~ 125°C
SRT13HA0G Taiwan Semiconductor Corporation

SRT13HA0G

DIODE SCHOTTKY 30V 1A TS-1

Taiwan Semiconductor Corporation

4,303 -
Datasheet - T-18, Axial Tape & Box (TB) Active Schottky 30 V 1A 550 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 30 V - Automotive AEC-Q101 Through Hole TS-1 -55°C ~ 125°C
UG06BHA0G Taiwan Semiconductor Corporation

UG06BHA0G

DIODE GEN PURP 100V 600MA TS-1

Taiwan Semiconductor Corporation

8,366 -
Datasheet - T-18, Axial Tape & Box (TB) Active Standard 100 V 600mA 950 mV @ 600 mA Fast Recovery =< 500ns, > 200mA (Io) 15 ns 5 µA @ 100 V 9pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole TS-1 -55°C ~ 150°C
UG54G A0G Taiwan Semiconductor Corporation

UG54G A0G

DIODE GEN PURP 200V 5A DO201AD

Taiwan Semiconductor Corporation

2,923 -
Datasheet - DO-201AD, Axial Tape & Box (TB) Active Standard 200 V 5A 1.05 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 20 ns 10 µA @ 200 V - - - Through Hole DO-201AD -55°C ~ 175°C
UG54GHA0G Taiwan Semiconductor Corporation

UG54GHA0G

DIODE GEN PURP 200V 5A DO201AD

Taiwan Semiconductor Corporation

3,516 -
Datasheet - DO-201AD, Axial Tape & Box (TB) Active Standard 200 V 5A 1.05 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 20 ns 10 µA @ 200 V - Automotive AEC-Q101 Through Hole DO-201AD -55°C ~ 175°C
UG58GHA0G Taiwan Semiconductor Corporation

UG58GHA0G

DIODE GEN PURP 600V 5A DO201AD

Taiwan Semiconductor Corporation

6,814 -
Datasheet - DO-201AD, Axial Tape & Box (TB) Active Standard 600 V 5A 2.1 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 20 ns 30 µA @ 600 V - Automotive AEC-Q101 Through Hole DO-201AD -55°C ~ 150°C
GPA804 C0G Taiwan Semiconductor Corporation

GPA804 C0G

DIODE GEN PURP 400V 8A TO220AC

Taiwan Semiconductor Corporation

5,520 -
Datasheet - TO-220-2 Tube Discontinued at Digi-Key Standard 400 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 400 V 50pF @ 4V, 1MHz - - Through Hole TO-220AC -55°C ~ 150°C
GPA805 C0G Taiwan Semiconductor Corporation

GPA805 C0G

DIODE GEN PURP 600V 8A TO220AC

Taiwan Semiconductor Corporation

5,160 -
Datasheet - TO-220-2 Tube Discontinued at Digi-Key Standard 600 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V 50pF @ 4V, 1MHz - - Through Hole TO-220AC -55°C ~ 150°C
GPA805HC0G Taiwan Semiconductor Corporation

GPA805HC0G

DIODE GEN PURP 600V 8A TO220AC

Taiwan Semiconductor Corporation

7,238 -
Datasheet - TO-220-2 Tube Discontinued at Digi-Key Standard 600 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V 50pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 150°C
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Single Diodes FAQ

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