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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
NXPSC10650X6Q WeEn Semiconductors

NXPSC10650X6Q

DIODE SIL CARB 650V 10A TO220F

WeEn Semiconductors

2,995 -
Datasheet - TO-220-2 Full Pack, Isolated Tab Bulk Obsolete SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 250 µA @ 650 V 300pF @ 1V, 1MHz - - Through Hole TO-220F 175°C (Max)
NXPSC10650B6J WeEn Semiconductors

NXPSC10650B6J

DIODE SIL CARBIDE 650V 10A D2PAK

WeEn Semiconductors

2,290 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 250 µA @ 650 V 300pF @ 1V, 1MHz - - Surface Mount D2PAK 175°C (Max)
NXPSC126506Q WeEn Semiconductors

NXPSC126506Q

DIODE SIL CARB 650V 12A TO220AC

WeEn Semiconductors

990 -
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 12A 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 650 V 380pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
WNSC6D20650B6J WeEn Semiconductors

WNSC6D20650B6J

DIODE SIL CARBIDE 650V 20A D2PAK

WeEn Semiconductors

4,518 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 20A 1.55 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 650 V 780pF @ 1V, 1MHz - - Surface Mount D2PAK 175°C
NXPSC10650Q WeEn Semiconductors

NXPSC10650Q

DIODE SIL CARB 650V 10A TO220AC

WeEn Semiconductors

1,916 -
Datasheet - TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 250 µA @ 650 V 300pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
WNSC2D151200WQ WeEn Semiconductors

WNSC2D151200WQ

DIODE SIL CARB 1.2KV 15A TO247-2

WeEn Semiconductors

4,589 -
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 15A 1.7 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 150 µA @ 1200 V 700pF @ 1V, 1MHz - - Through Hole TO-247-2 175°C
NXPSC166506Q WeEn Semiconductors

NXPSC166506Q

DIODE SIL CARB 650V 16A TO220AC

WeEn Semiconductors

3,003 -
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 16A 1.7 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 534pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
NXPSC10650D6J WeEn Semiconductors

NXPSC10650D6J

DIODE SIL CARBIDE 650V 10A DPAK

WeEn Semiconductors

7,204 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 250 µA @ 650 V 300pF @ 1V, 1MHz - - Surface Mount DPAK 175°C (Max)
NXPSC206506Q WeEn Semiconductors

NXPSC206506Q

DIODE SIL CARB 650V 20A TO220AC

WeEn Semiconductors

3,041 -
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 20A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 500 µA @ 650 V 600pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
WNSC2D30650WQ WeEn Semiconductors

WNSC2D30650WQ

SILICON CARBIDE SCHOTTKY DI

WeEn Semiconductors

275 -
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 30A 1.7 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 980pF @ 1V, 1MHz - - Through Hole TO-247-2 175°C
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Single Diodes FAQ

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