REFINED COMPONENT RESULTS

Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
NXPSC06650D6J WeEn Semiconductors

NXPSC06650D6J

DIODE SIL CARBIDE 650V 6A DPAK

WeEn Semiconductors

5,450 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 190pF @ 1V, 1MHz - - Surface Mount DPAK 175°C (Max)
WND60P16WQ WeEn Semiconductors

WND60P16WQ

DIODE GEN PURP 1.6KV 60A TO247-2

WeEn Semiconductors

463 -
Datasheet - TO-247-2 Tube Active Standard 1600 V 60A 1.12 V @ 60 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 1600 V - - - Through Hole TO-247-2 -55°C ~ 150°C
BYC75W-600PQ WeEn Semiconductors

BYC75W-600PQ

DIODE GEN PURP 600V 75A TO247-2

WeEn Semiconductors

851 -
Datasheet - TO-247-2 Tube Active Standard 600 V 75A 2.75 V @ 75 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 600 V - - - Through Hole TO-247-2 175°C (Max)
WNSC2D101200WQ WeEn Semiconductors

WNSC2D101200WQ

DIODE SIL CARB 1.2KV 10A TO247-2

WeEn Semiconductors

2,317 -
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.65 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 110 µA @ 1200 V 490pF @ 1V, 1MHz - - Through Hole TO-247-2 175°C
NXPSC08650D6J WeEn Semiconductors

NXPSC08650D6J

DIODE SIL CARBIDE 650V 8A DPAK

WeEn Semiconductors

7,184 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 230 µA @ 650 V 260pF @ 1V, 1MHz - - Surface Mount DPAK 175°C (Max)
NXPSC086506Q WeEn Semiconductors

NXPSC086506Q

DIODE SIL CARB 650V 8A TO220AC

WeEn Semiconductors

3,000 -
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 230 µA @ 650 V 260pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
NXPSC08650X6Q WeEn Semiconductors

NXPSC08650X6Q

DIODE SIL CARBIDE 650V 8A TO220F

WeEn Semiconductors

2,926 -
Datasheet - TO-220-2 Full Pack, Isolated Tab Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 230 µA @ 650 V 260pF @ 1V, 1MHz - - Through Hole TO-220F 175°C (Max)
NXPSC08650B6J WeEn Semiconductors

NXPSC08650B6J

DIODE SIL CARBIDE 650V 8A D2PAK

WeEn Semiconductors

3,160 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 230 µA @ 650 V 260pF @ 1V, 1MHz - - Surface Mount D2PAK 175°C (Max)
WNSC6D16650B6J WeEn Semiconductors

WNSC6D16650B6J

DIODE SIL CARBIDE 650V 16A D2PAK

WeEn Semiconductors

2,665 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 16A 1.45 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 650 V 780pF @ 1V, 1MHz - - Surface Mount D2PAK 175°C
NXPSC106506Q WeEn Semiconductors

NXPSC106506Q

DIODE SIL CARB 650V 10A TO220AC

WeEn Semiconductors

3,000 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 250 µA @ 650 V 300pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
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Single Diodes FAQ

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