Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
STTH15RQ06D DIODE GEN PURP 600V 15A TO220AC STMicroelectronics	8,287	-	RFQ	Datasheet	ECOPACK®	TO-220-2	Tube	Active	Standard	600 V	15A	2.95 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	20 µA @ 600 V	-	-	-	Through Hole	TO-220AC	175°C (Max)
VS-E5PH7506LHN3 DIODE GEN PURP 600V 75A TO247AD Vishay General Semiconductor - Diodes Division	5,346	-	RFQ	Datasheet	FRED Pt®	TO-247-2	Tube	Active	Standard	600 V	75A	1.7 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	57 ns	25 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD	-55°C ~ 175°C
VS-E5PX7506LHN3 DIODE GEN PURP 600V 75A TO247AD Vishay General Semiconductor - Diodes Division	7,868	-	RFQ	Datasheet	FRED Pt®	TO-247-2	Tube	Active	Standard	600 V	75A	2.2 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	48 ns	25 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD	-55°C ~ 175°C
VS-45EPF06LHM3 DIODE GEN PURP 600V 45A TO247AD Vishay General Semiconductor - Diodes Division	5,302	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	45A	1.31 V @ 45 A	Fast Recovery =< 500ns, > 200mA (Io)	180 ns	100 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD	-40°C ~ 150°C
VS-65APS12LHM3 DIODE GEN PURP 1.2KV 65A TO247AD Vishay General Semiconductor - Diodes Division	8,905	-	RFQ	Datasheet	-	TO-3P-3, SC-65-3	Tube	Active	Standard	1200 V	65A	1.12 V @ 65 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1200 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD (TO-3P)	-40°C ~ 150°C
VS-12FR20 DIODE GEN PURP 200V 12A DO203AA Vishay General Semiconductor - Diodes Division	2,623	-	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	200 V	12A	1.26 V @ 38 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 200 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
TRS8E65F,S1Q DIODE SIL CARB 650V 8A TO220-2L Toshiba Semiconductor and Storage	8,401	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.6 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	28pF @ 650V, 1MHz	-	-	Through Hole	TO-220-2L	175°C (Max)
STTH810GY-TR DIODE GEN PURP 1KV 8A D2PAK STMicroelectronics	8,134	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	1000 V	8A	2 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	85 ns	5 µA @ 1000 V	-	Automotive	AEC-Q101	Surface Mount	D2PAK	-40°C ~ 175°C
VS-45EPF12LHM3 DIODE GEN PURP 1.2KV 45A TO247AD Vishay General Semiconductor - Diodes Division	5,470	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	45A	1.44 V @ 45 A	Fast Recovery =< 500ns, > 200mA (Io)	450 ns	100 µA @ 1200 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD	-40°C ~ 150°C
VS-30APF10-M3 DIODE GEN PURP 1KV 30A TO247AC Vishay General Semiconductor - Diodes Division	8,946	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	1000 V	30A	1.41 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	450 ns	100 µA @ 1000 V	-	-	-	Through Hole	TO-247AC	-40°C ~ 150°C
STTH15R06FP DIODE GP 600V 15A TO220FPAC STMicroelectronics	2,320	-	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	Standard	600 V	15A	2.9 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	60 µA @ 600 V	-	-	-	Through Hole	TO-220FPAC	175°C (Max)
VS-40EPS16-M3 DIODE GP 1.6KV 40A TO247AC Vishay General Semiconductor - Diodes Division	6,765	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1600 V	40A	1.14 V @ 40 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1600 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
VS-65APS16LHM3 DIODE GEN PURP 1.6KV 65A TO247AD Vishay General Semiconductor - Diodes Division	8,866	-	RFQ	Datasheet	-	TO-3P-3, SC-65-3	Tube	Active	Standard	1600 V	65A	1.17 V @ 65 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1600 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD (TO-3P)	-40°C ~ 150°C
VS-HFA06PB120-N3 DIODE GP 1.2KV 6A TO247AC Vishay General Semiconductor - Diodes Division	6,033	-	RFQ	Datasheet	HEXFRED®	TO-247-2	Tube	Active	Standard	1200 V	6A	3 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	80 ns	5 µA @ 1200 V	-	-	-	Through Hole	TO-247AC Modified	-55°C ~ 150°C
DSA1-12D DIODE AVALANCHE 1.2KV 2.3A IXYS	9,568	-	RFQ	Datasheet	-	Radial	Box	Active	Avalanche	1200 V	2.3A	1.34 V @ 7 A	Standard Recovery >500ns, > 200mA (Io)	-	700 µA @ 1200 V	-	-	-	Through Hole	-	-40°C ~ 150°C
TRS10E65F,S1Q DIODE SIL CARB 650V 10A TO220-2L Toshiba Semiconductor and Storage	3,742	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	36pF @ 650V, 1MHz	-	-	Through Hole	TO-220-2L	175°C (Max)
TRS10A65F,S1Q DIODE SIL CARB 650V 10A TO220F Toshiba Semiconductor and Storage	4,007	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	36pF @ 650V, 1MHz	-	-	Through Hole	TO-220F-2L	175°C (Max)
IDWD10G120C5XKSA1 DIODE SIL CARB 1.2KV 34A TO247-2 Infineon Technologies	6,810	-	RFQ	Datasheet	CoolSiC™+	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	34A	1.65 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 1200 V	730pF @ 1V, 1MHz	-	-	Through Hole	PG-TO247-2	-55°C ~ 175°C
TRS4A65F,S1Q DIODE SIL CARBIDE 650V 4A TO220F Toshiba Semiconductor and Storage	4,029	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	4A	1.6 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	16pF @ 650V, 1MHz	-	-	Through Hole	TO-220F-2L	175°C (Max)
TRS12E65F,S1Q DIODE SIL CARB 650V 12A TO220-2L Toshiba Semiconductor and Storage	5,715	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 650 V	65pF @ 650V, 1MHz	-	-	Through Hole	TO-220-2L	175°C (Max)

Single Diodes FAQ

What Single Diodes components can I source from EGOO?

You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete Single Diodes parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

Does EGOO support BOM and small-batch sourcing?

Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

How do I request pricing and availability?

Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.