PRODUCT DIRECTORY

Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
SICR101200 SMC Diode Solutions

SICR101200

DIODE SIL CARB 1.2KV 10A TO220AC

SMC Diode Solutions

8,722 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 640pF @ 0V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
STTH3010WY STMicroelectronics

STTH3010WY

DIODE GEN PURP 1KV 30A DO247-2

STMicroelectronics

9,611 -
Datasheet - DO-247-2 (Straight Leads) Tube Active Standard 1000 V 30A 2 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 15 µA @ 1000 V - Automotive AEC-Q101 Through Hole - -40°C ~ 175°C
D8015L56TP Littelfuse Inc.

D8015L56TP

DIODE GP 800V 9.5A ITO220AB

Littelfuse Inc.

3,887 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Active Standard 800 V 9.5A 1.6 V @ 15 A Standard Recovery >500ns, > 200mA (Io) 4 µs 20 µA @ 800 V - - - Through Hole ITO-220AB -40°C ~ 125°C
STPSC10H065D STMicroelectronics

STPSC10H065D

650 V 10 A power Schottky silico

STMicroelectronics

4,606 -
Datasheet - TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 10A 1.75 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 480pF @ 0V, 1MHz - - Through Hole TO-220AC -40°C ~ 175°C
TRS8A65F,S1Q Toshiba Semiconductor and Storage

TRS8A65F,S1Q

DIODE SIL CARBIDE 650V 8A TO220F

Toshiba Semiconductor and Storage

1 -
Datasheet - TO-220-2 Full Pack Tube Active SiC (Silicon Carbide) Schottky 650 V 8A 1.6 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 28pF @ 650V, 1MHz - - Through Hole TO-220F-2L 175°C (Max)
STPSC12065G-TR STMicroelectronics

STPSC12065G-TR

DIODE SIL CARBIDE 650V 12A D2PAK

STMicroelectronics

9,367 -
Datasheet ECOPACK®2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 12A 1.45 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 150 µA @ 650 V 750pF @ 0V, 1MHz - - Surface Mount D2PAK -40°C ~ 175°C
DHG5I600PM IXYS

DHG5I600PM

DIODE GEN PURP 600V 5A TO220ACFP

IXYS

7,018 -
Datasheet - TO-220-2 Full Pack, Isolated Tab Tube Active Standard 600 V 5A 2.2 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 600 V - - - Through Hole TO-220ACFP -55°C ~ 150°C
STTH60P03SW STMicroelectronics

STTH60P03SW

DIODE GEN PURP 300V 60A TO247-3

STMicroelectronics

7 -
Datasheet - TO-247-3 Tube Active Standard 300 V 60A 1.5 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 300 V - - - Through Hole TO-247-3 175°C (Max)
DHG20I1200HA IXYS

DHG20I1200HA

DIODE GEN PURP 1.2KV 20A TO247

IXYS

6 -
Datasheet - TO-247-2 Tube Active Standard 1200 V 20A 2.24 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 1200 V - - - Through Hole TO-247 -55°C ~ 150°C
DSI45-08A IXYS

DSI45-08A

DIODE GEN PURP 800V 45A TO247AD

IXYS

4,990 -
Datasheet - TO-247-2 Tube Active Standard 800 V 45A 1.28 V @ 45 A Standard Recovery >500ns, > 200mA (Io) - 20 µA @ 800 V - - - Through Hole TO-247AD -40°C ~ 175°C
DSC02120FP Diodes Incorporated

DSC02120FP

DIODE SIL CARB 1.2KV 2A ITO220AC

Diodes Incorporated

24 -
Datasheet - TO-220-2 Full Pack, Isolated Tab Tube Active SiC (Silicon Carbide) Schottky 1200 V 2A 1.7 V @ 2 A No Recovery Time > 500mA (Io) 0 ns 128 µA @ 1200 V 132pF @ 100mV, 1MHz - - Through Hole ITO-220AC (Type WX) -55°C ~ 175°C
GP3D010A120A SemiQ

GP3D010A120A

DIODE SIL CARB 1.2KV 10A TO220-2

SemiQ

6 -
Datasheet Amp+™ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.65 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1200 V 608pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
SCS215AGC17 Rohm Semiconductor

SCS215AGC17

DIODE SIC 650V 15A TO220ACFP

Rohm Semiconductor

9,898 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 15A 1.55 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 300 µA @ 600 V 550pF @ 1V, 1MHz - - Through Hole TO-220ACFP 175°C
1N5622 Microchip Technology

1N5622

DIODE GEN PURP 1KV 1A AXIAL

Microchip Technology

8,521 -
Datasheet - A, Axial Bulk Active Standard 1000 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 1000 V - - - Through Hole A, Axial -65°C ~ 200°C
AIDK10S65C5ATMA1 Infineon Technologies

AIDK10S65C5ATMA1

DISCRETE DIODES

Infineon Technologies

2,909 -
Datasheet CoolSiC™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 303pF @ 1V, 1MHz Automotive AEC-Q101 Surface Mount PG-TO263-2 -40°C ~ 175°C
VS-APH3006-N3 Vishay General Semiconductor - Diodes Division

VS-APH3006-N3

DIODE GP 600V 30A TO247AC

Vishay General Semiconductor - Diodes Division

2,985 -
Datasheet FRED Pt® TO-247-3 Tube Active Standard 600 V 30A 2.65 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 26 ns 30 µA @ 600 V - - - Through Hole TO-247AC -55°C ~ 175°C
SCS212AGC17 Rohm Semiconductor

SCS212AGC17

DIODE SIC 650V 12A TO220ACFP

Rohm Semiconductor

4,198 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 12A 1.55 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 240 µA @ 600 V 438pF @ 1V, 1MHz - - Through Hole TO-220ACFP 175°C
GP3D015A120A SemiQ

GP3D015A120A

DIODE SIL CARB 1.2KV 15A TO220-2

SemiQ

10 -
Datasheet Amp+™ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 15A 1.6 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 1200 V 962pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
DSC05120FP Diodes Incorporated

DSC05120FP

DIODE SIL CARB 1.2KV 5A ITO220AC

Diodes Incorporated

2,034 -
Datasheet - TO-220-2 Full Pack, Isolated Tab Tube Active SiC (Silicon Carbide) Schottky 1200 V 5A 1.7 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 190 µA @ 1200 V 318pF @ 100mV, 1MHz - - Through Hole ITO-220AC (Type WX) -55°C ~ 175°C
STTH3006DPI STMicroelectronics

STTH3006DPI

DIODE GEN PURP 600V 30A DOP3I

STMicroelectronics

3,576 -
Datasheet - DOP3I-2 Insulated (Straight Leads) Tube Active Standard 600 V 30A 3.6 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 40 µA @ 600 V - - - Through Hole DOP3I 150°C (Max)
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COMPONENT SOURCING SUPPORT

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Single Diodes FAQ

What Single Diodes components can I source from EGOO?

You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete Single Diodes parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

Does EGOO support BOM and small-batch sourcing?

Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

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Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.

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