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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
GC20N65Q Goford Semiconductor

GC20N65Q

N650V,RD(MAX)<170M@10V,VTH2.5V~4

Goford Semiconductor

33 -
Datasheet Cool MOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 170mOhm @ 10A, 10V 4.5V @ 250µA 39 nC @ 10 V ±30V 1724 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247
GT023N10Q Goford Semiconductor

GT023N10Q

MOSFET N-CH 100V 226A 250W TO-2

Goford Semiconductor

30 -
Datasheet SGT TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 226A (Tc) 10V 2.7mOhm @ 80A, 10V 4V @ 250µA 121 nC @ 10 V ±20V 8488 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247
GC20N65QD Goford Semiconductor

GC20N65QD

MOSFET N-CH 650V 20A TO-247

Goford Semiconductor

30 -
Datasheet - - Tube Active - MOSFET (Metal Oxide) - 20A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 250µA 39 nC @ 10 V ±30V 1729 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount TO-247-3
GC120N65QF Goford Semiconductor

GC120N65QF

MOSFET N-CH 650V 30A TO-247

Goford Semiconductor

30 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 120mOhm @ 38A, 10V 5V @ 250µA 68 nC @ 10 V ±30V 3100 pF @ 275 V - 96.1W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247
GC080N65QF Goford Semiconductor

GC080N65QF

MOSFET N-CH 650V 50A TO-247

Goford Semiconductor

30 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 50A (Tc) 10V 80mOhm @ 16A, 10V 5V @ 250µA 100 nC @ 10 V ±30V 4900 pF @ 380 V - 298W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247
GC030N65QF Goford Semiconductor

GC030N65QF

MOSFET N-CH 650V 80A TO-247

Goford Semiconductor

30 -
Datasheet - - Tube Active - MOSFET (Metal Oxide) - 80A (Tc) 10V 30mOhm @ 20A, 10V 5V @ 250µA 240 nC @ 10 V ±30V 9500 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount TO-247-3
GC041N65QF Goford Semiconductor

GC041N65QF

MOSFET N-CH 650V 70A TO-247

Goford Semiconductor

26 -
Datasheet SuperJunction TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 70A (Tc) 10V 43mOhm @ 20A, 10V 5V @ 250µA 160 nC @ 10 V ±30V 7668 pF @ 400 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247
G400P06T Goford Semiconductor

G400P06T

MOSFET P-CH 60V 32A TO-220

Goford Semiconductor

1,000 -
Datasheet TrenchFET® TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) - 32A (Tc) 10V 40mOhm @ 12A, 10V 3V @ 250µA - ±20V - - 110W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
G18N20T Goford Semiconductor

G18N20T

MOSFET N-CH 200V 18A 110W 190m(m

Goford Semiconductor

1,000 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 190mOhm @ 8A, 10V 4V @ 250µA 31 nC @ 5 V ±30V 1120 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
GT700P08T Goford Semiconductor

GT700P08T

MOSFET P-CH 80V 25A TO-220

Goford Semiconductor

1,000 -
Datasheet SGT TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) - 25A (Tc) 10V 72mOhm @ 2A, 10V 3.5V @ 250µA - ±20V - - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
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FETs, MOSFETs FAQ

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