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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPSA70R900P7SAKMA1 Infineon Technologies

IPSA70R900P7SAKMA1

MOSFET N-CH 700V 6A TO251-3

Infineon Technologies

9,029 -
Datasheet CoolMOS™ P7 TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 700 V 6A (Tc) 10V 900mOhm @ 1.1A, 10V 3.5V @ 60µA 6.8 nC @ 400 V ±16V 211 pF @ 400 V - 30.5W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
BSP321PL6327 Infineon Technologies

BSP321PL6327

P-CHANNEL MOSFET

Infineon Technologies

37,989 -
Datasheet SIPMOS® TO-261-4, TO-261AA Bulk Active P-Channel MOSFET (Metal Oxide) 100 V 980mA (Tc) 10V 900mOhm @ 980mA, 10V 4V @ 380µA 12 nC @ 10 V ±20V 319 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT223-4-21
IPU60R2K0C6AKMA1 Infineon Technologies

IPU60R2K0C6AKMA1

MOSFET N-CH 600V 2.4A TO251-3

Infineon Technologies

5,396 -
Datasheet CoolMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.4A (Tc) 10V 2Ohm @ 760mA, 10V 3.5V @ 60µA 6.7 nC @ 10 V ±20V 140 pF @ 100 V - 22.3W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
BSC889N03MSG Infineon Technologies

BSC889N03MSG

N-CHANNEL POWER MOSFET

Infineon Technologies

15,000 -
Datasheet OptiMOS™ 3 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 44A (Tc) 4.5V, 10V 9.1mOhm @ 30A, 10V 2V @ 250µA 20 nC @ 10 V ±20V 1500 pF @ 15 V - 2.5W (Ta), 28W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TSDSON-8
IPS65R1K0CEAKMA1 Infineon Technologies

IPS65R1K0CEAKMA1

MOSFET N-CH 650V 4.3A TO251

Infineon Technologies

7,426 -
Datasheet CoolMOS™ CE TO-251-3 Stub Leads, IPAK Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 650 V 4.3A (Tc) 10V 1Ohm @ 1.5A, 10V 3.5V @ 200µA 15.3 nC @ 10 V ±20V 328 pF @ 100 V - 37W (Tc) -40°C ~ 150°C (TJ) - - Through Hole TO-251
BSC091N03MSCGATMA1 Infineon Technologies

BSC091N03MSCGATMA1

POWER FIELD-EFFECT TRANSISTOR, 1

Infineon Technologies

15,000 -
Datasheet SIPMOS® 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 44A (Tc) 4.5V, 10V 9.1mOhm @ 30A, 10V 2V @ 250µA 20 nC @ 10 V ±20V 1500 pF @ 15 V - 2.5W (Ta), 28W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-6
BSO065N03MSG Infineon Technologies

BSO065N03MSG

SMALL SIGNAL N-CHANNEL MOSFET

Infineon Technologies

2,500 -
Datasheet OptiMOS™ 3 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 6.5mOhm @ 16A, 10V 2V @ 250µA 40 nC @ 10 V ±20V 3100 pF @ 15 V - 1.56W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-8
BSP324L6327 Infineon Technologies

BSP324L6327

N-CHANNEL POWER MOSFET

Infineon Technologies

80,249 -
Datasheet SIPMOS® TO-261-4, TO-261AA Bulk Active N-Channel MOSFET (Metal Oxide) 400 V 170mA (Ta) 4.5V, 10V 25Ohm @ 170mA, 10V 2.3V @ 94µA 5.9 nC @ 10 V ±20V 154 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT223-4-21
BSP603S2LNT Infineon Technologies

BSP603S2LNT

N-CHANNEL POWER MOSFET

Infineon Technologies

30,123 -
Datasheet OptiMOS™ TO-261-4, TO-261AA Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 5.2A (Ta) 4.5V, 10V 33mOhm @ 2.6A, 10V 2V @ 50µA 42 nC @ 10 V ±20V 1390 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT223-4-21
IPS60R1K0CEAKMA1 Infineon Technologies

IPS60R1K0CEAKMA1

CONSUMER

Infineon Technologies

5,471 -
Datasheet CoolMOS™ CE TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.8A (Tj) 10V 1Ohm @ 1.5A, 10V 3.5V @ 130µA 13 nC @ 10 V ±20V 280 pF @ 100 V - 61W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
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FETs, MOSFETs FAQ

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Use the available manufacturer and technical filters to compare matching parts by specifications, stock status, pricing and datasheet information.

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Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.

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