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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
AIMBG120R020M1XTMA1 Infineon Technologies

AIMBG120R020M1XTMA1

SIC_DISCRETE

Infineon Technologies

864 -
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 104A (Tc) 18V, 20V 25mOhm @ 43A, 20V 5.1V @ 15mA 82 nC @ 20 V +23V, -5V 2667 pF @ 800 V - 468W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-7-12
IMZC120R012M2HXKSA1 Infineon Technologies

IMZC120R012M2HXKSA1

IMZC120R012M2HXKSA1

Infineon Technologies

215 -
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 129A (Tc) 15V, 18V 12mOhm @ 57A, 18V 5.1V @ 17.8mA 124 nC @ 18 V +23V, -7V 4050 pF @ 800 V - 480W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-17
AIMZA75R008M1HXKSA1 Infineon Technologies

AIMZA75R008M1HXKSA1

AUTOMOTIVE_SICMOS

Infineon Technologies

240 -
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 750 V 163A (Tc) 15V, 20V 7.2mOhm @ 90.3A, 20V 5.6V @ 32.4mA 178 nC @ 18 V +23V, -5V 6137 pF @ 500 V - 517W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4-U02
IMZA75R008M1HXKSA1 Infineon Technologies

IMZA75R008M1HXKSA1

SILICON CARBIDE MOSFET

Infineon Technologies

240 -
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 750 V 163A (Tc) 15V, 20V 7.2mOhm @ 90.3A, 20V 5.6V @ 32.4mA 178 nC @ 500 V +23V, -5V 6137 pF @ 500 V - 517W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-U02
IPD030N03LF2SATMA1 Infineon Technologies

IPD030N03LF2SATMA1

MOSFET N-CH 30V 160A DPAK

Infineon Technologies

2,000 -
Datasheet StrongIRFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 24A (Ta), 99A (Tc) 4.5V, 10V 3.05mOhm @ 60A, 10V 2.35V @ 40µA 50 nC @ 10 V ±20V 2200 pF @ 15 V - 3W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-34
DF17MR12W1M1HFB68BPSA1 Infineon Technologies

DF17MR12W1M1HFB68BPSA1

LOW POWER EASY

Infineon Technologies

33 -
Datasheet EasyPACK™ Module Tray Active N-Channel SiCFET (Silicon Carbide) 1200 V 45A (Tj) 15V, 18V 16.2mOhm @ 50A, 18V 5.15V @ 20mA 149 nC @ 18 V +20V, -7V 4400 pF @ 800 V - - -40°C ~ 175°C (TJ) - - Chassis Mount -
BSS119NH7796 Infineon Technologies

BSS119NH7796

SMALL SIGNAL N-CHANNEL MOSFET

Infineon Technologies

10,000 -
Datasheet OptiMOS™ TO-236-3, SC-59, SOT-23-3 Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 190mA (Ta) 4.5V, 10V 6Ohm @ 190mA, 10V 2.3V @ 13µA 0.6 nC @ 10 V ±20V 20.9 pF @ 25 V - 500mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT23-3-5
BSD214SNL6327 Infineon Technologies

BSD214SNL6327

SMALL SIGNAL N-CHANNEL MOSFET

Infineon Technologies

22,000 -
Datasheet OptiMOS™ 2 6-VSSOP, SC-88, SOT-363 Bulk Active N-Channel MOSFET (Metal Oxide) 20 V 1.5A (Ta) 2.5V, 4.5V 140mOhm @ 1.5A, 4.5V 1.2V @ 3.7µA 0.8 nC @ 5 V ±12V 143 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT363-6-6
IRF8736PBF Infineon Technologies

IRF8736PBF

MOSFET N-CH 30V 18A 8SO

Infineon Technologies

4,709 -
Datasheet HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta) 4.5V, 10V 4.8mOhm @ 18A, 10V 2.35V @ 50µA 26 nC @ 4.5 V ±20V 2315 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
BSS119L6433 Infineon Technologies

BSS119L6433

SMALL SIGNAL N-CHANNEL MOSFET

Infineon Technologies

86,725 -
Datasheet SIPMOS® TO-236-3, SC-59, SOT-23-3 Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 170mA (Ta) 4.5V, 10V 6Ohm @ 170mA, 10V 2.3V @ 50µA 2.5 nC @ 10 V ±20V 78 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT23
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FETs, MOSFETs FAQ

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