FETs, MOSFETs
Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.
For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AIMBG120R020M1XTMA1SIC_DISCRETE |
864 | - |
|
Datasheet | - | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 104A (Tc) | 18V, 20V | 25mOhm @ 43A, 20V | 5.1V @ 15mA | 82 nC @ 20 V | +23V, -5V | 2667 pF @ 800 V | - | 468W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7-12 |
|
IMZC120R012M2HXKSA1IMZC120R012M2HXKSA1 |
215 | - |
|
Datasheet | CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 129A (Tc) | 15V, 18V | 12mOhm @ 57A, 18V | 5.1V @ 17.8mA | 124 nC @ 18 V | +23V, -7V | 4050 pF @ 800 V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-17 |
|
AIMZA75R008M1HXKSA1AUTOMOTIVE_SICMOS |
240 | - |
|
Datasheet | CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 750 V | 163A (Tc) | 15V, 20V | 7.2mOhm @ 90.3A, 20V | 5.6V @ 32.4mA | 178 nC @ 18 V | +23V, -5V | 6137 pF @ 500 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4-U02 |
|
IMZA75R008M1HXKSA1SILICON CARBIDE MOSFET |
240 | - |
|
Datasheet | CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 750 V | 163A (Tc) | 15V, 20V | 7.2mOhm @ 90.3A, 20V | 5.6V @ 32.4mA | 178 nC @ 500 V | +23V, -5V | 6137 pF @ 500 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-U02 |
|
IPD030N03LF2SATMA1MOSFET N-CH 30V 160A DPAK |
2,000 | - |
|
Datasheet | StrongIRFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 24A (Ta), 99A (Tc) | 4.5V, 10V | 3.05mOhm @ 60A, 10V | 2.35V @ 40µA | 50 nC @ 10 V | ±20V | 2200 pF @ 15 V | - | 3W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-34 |
|
DF17MR12W1M1HFB68BPSA1LOW POWER EASY |
33 | - |
|
Datasheet | EasyPACK™ | Module | Tray | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 45A (Tj) | 15V, 18V | 16.2mOhm @ 50A, 18V | 5.15V @ 20mA | 149 nC @ 18 V | +20V, -7V | 4400 pF @ 800 V | - | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
BSS119NH7796SMALL SIGNAL N-CHANNEL MOSFET |
10,000 | - |
|
Datasheet | OptiMOS™ | TO-236-3, SC-59, SOT-23-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 190mA (Ta) | 4.5V, 10V | 6Ohm @ 190mA, 10V | 2.3V @ 13µA | 0.6 nC @ 10 V | ±20V | 20.9 pF @ 25 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT23-3-5 |
|
BSD214SNL6327SMALL SIGNAL N-CHANNEL MOSFET |
22,000 | - |
|
Datasheet | OptiMOS™ 2 | 6-VSSOP, SC-88, SOT-363 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 1.5A (Ta) | 2.5V, 4.5V | 140mOhm @ 1.5A, 4.5V | 1.2V @ 3.7µA | 0.8 nC @ 5 V | ±12V | 143 pF @ 10 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT363-6-6 |
|
IRF8736PBFMOSFET N-CH 30V 18A 8SO |
4,709 | - |
|
Datasheet | HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 18A (Ta) | 4.5V, 10V | 4.8mOhm @ 18A, 10V | 2.35V @ 50µA | 26 nC @ 4.5 V | ±20V | 2315 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
BSS119L6433SMALL SIGNAL N-CHANNEL MOSFET |
86,725 | - |
|
Datasheet | SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 170mA (Ta) | 4.5V, 10V | 6Ohm @ 170mA, 10V | 2.3V @ 50µA | 2.5 nC @ 10 V | ±20V | 78 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT23 |
FETs, MOSFETs FAQ
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Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.
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