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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IMT40R011M2HXTMA1 Infineon Technologies

IMT40R011M2HXTMA1

SIC-MOS

Infineon Technologies

1,927 -
Datasheet CoolSiC™ 8-PowerSFN Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 400 V 13.4A (Ta), 144A (Tc) 15V, 18V 14.4mOhm @ 37.1A, 18V 5.6V @ 13.3mA 85 nC @ 18 V +23V, -7V 3770 pF @ 200 V - 3.8W (Ta), 429W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8-2
IMZC120R017M2HXKSA1 Infineon Technologies

IMZC120R017M2HXKSA1

IMZC120R017M2HXKSA1

Infineon Technologies

240 -
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 97A (Tc) 15V, 18V 17mOhm @ 40A, 18V 5.1V @ 12.7mA 89 nC @ 18 V +23V, -7V 2910 pF @ 800 V - 382W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-17
AIMBG120R030M1XTMA1 Infineon Technologies

AIMBG120R030M1XTMA1

SIC_DISCRETE

Infineon Technologies

1,708 -
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 70A (Tc) 18V, 20V 38mOhm @ 27A, 20V 5.1V @ 8.6mA 57 nC @ 20 V +23V, -5V 1738 pF @ 800 V - 333W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-7-12
AIMZA75R020M1HXKSA1 Infineon Technologies

AIMZA75R020M1HXKSA1

AUTOMOTIVE_SICMOS

Infineon Technologies

190 -
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 75A (Tj) 15V, 20V 18mOhm @ 32.5A, 20V 5.6V @ 11.7mA 67 nC @ 18 V +23V, -5V 2217 pF @ 500 V - 278W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4
IMBG65R015M2HXTMA1 Infineon Technologies

IMBG65R015M2HXTMA1

SILICON CARBIDE MOSFET

Infineon Technologies

1,000 -
Datasheet CoolSiC™ Gen 2 TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 115A (Tc) 15V, 20V 18mOhm @ 64.2A, 18V 5.6V @ 13mA 79 nC @ 18 V +23V, -7V 2792 pF @ 400 V - 416W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-12
IPQC60R010S7XTMA1 Infineon Technologies

IPQC60R010S7XTMA1

MOSFET

Infineon Technologies

750 -
Datasheet CoolMOS™ S7 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 12V 10mOhm @ 50A, 12V 4.5V @ 3.08mA 318 nC @ 12 V ±20V - - 694W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22
IMZA75R016M1HXKSA1 Infineon Technologies

IMZA75R016M1HXKSA1

SILICON CARBIDE MOSFET

Infineon Technologies

210 -
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 89A (Tj) 15V, 20V 15mOhm @ 41.5A, 20V 5.6V @ 14.9mA 81 nC @ 18 V +23V, -5V 2869 pF @ 500 V - 319W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4
AIMZA75R016M1HXKSA1 Infineon Technologies

AIMZA75R016M1HXKSA1

SICFET N-CH 750V 89A PG-TO247-4

Infineon Technologies

213 -
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 89A (Tc) 15V, 20V 22mOhm @ 41.5A, 18V 5.6V @ 14.9mA 81 nC @ 18 V +23V, -5V 2869 pF @ 500 V - 319W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4
IMW65R010M2HXKSA1 Infineon Technologies

IMW65R010M2HXKSA1

IMW65R010M2HXKSA1

Infineon Technologies

396 -
Datasheet CoolSiC™ TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 130A (Tc) 15V, 20V 9.1mOhm @ 92.1A, 20V 5.6V @ 18.7mA 112 nC @ 18 V +23V, -7V 4001 pF @ 400 V - 440W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-3-40
IMZA65R010M2HXKSA1 Infineon Technologies

IMZA65R010M2HXKSA1

IMZA65R010M2HXKSA1

Infineon Technologies

400 -
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 144A (Tc) 15V, 20V 9.1mOhm @ 92.1A, 20V 5.6V @ 18.7mA 112 nC @ 18 V +23V, -7V 4001 pF @ 400 V - 440W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-8
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FETs, MOSFETs FAQ

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