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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPD50N04S308ATMA1 Infineon Technologies

IPD50N04S308ATMA1

IPD50N04 - 20V-40V N-CHANNEL AUT

Infineon Technologies

125,808 -
Datasheet OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 10V 7.5mOhm @ 50A, 10V 4V @ 40µA 35 nC @ 10 V ±20V 2350 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3
AUIRFZ34N Infineon Technologies

AUIRFZ34N

AUIRFZ34 - 55V-60V N-CHANNEL AUT

Infineon Technologies

6,000 -
Datasheet HEXFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 29A (Tc) 10V 40mOhm @ 16A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 700 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRF6637TRPBF Infineon Technologies

IRF6637TRPBF

IRF6637 - 12V-300V N-CHANNEL POW

Infineon Technologies

1,172 -
Datasheet HEXFET® DirectFET™ Isometric MP Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 59A (Tc) 4.5V, 10V 7.7mOhm @ 14A, 10V 2.35V @ 250µA 17 nC @ 4.5 V ±20V 1330 pF @ 15 V - 2.3W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DIRECTFET™ MP
AUIRFZ48Z Infineon Technologies

AUIRFZ48Z

AUIRFZ48Z - 55V-60V N-CHANNEL AU

Infineon Technologies

4,817 -
Datasheet HEXFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 61A (Tc) 10V 11mOhm @ 37A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 1720 pF @ 25 V - 91W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
SPP08N50C3XKSA1 Infineon Technologies

SPP08N50C3XKSA1

SPP08N50 - 800V COOLMOS N-CHANNE

Infineon Technologies

22,195 -
Datasheet CoolMOS™ TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 560 V 7.6A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 350µA 32 nC @ 10 V ±20V 750 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
IPP70N04S406AKSA1 Infineon Technologies

IPP70N04S406AKSA1

MOSFET_(20V,40V)

Infineon Technologies

49,890 -
Datasheet OptiMOS™ TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 70A (Tc) 10V 6.5mOhm @ 70A, 10V 4V @ 26µA 32 nC @ 10 V ±20V 2550 pF @ 25 V - 58W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IRF7483MTRPBF Infineon Technologies

IRF7483MTRPBF

IRF7483 - 12V-300V N-CHANNEL POW

Infineon Technologies

3,799 -
Datasheet StrongIRFET™ DirectFET™ Isometric MF Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 135A (Tc) 6V, 10V 2.3mOhm @ 81A, 10V 3.9V @ 100µA 81 nC @ 10 V ±20V 3913 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DirectFET™ Isometric MF
IPA50R280E6 Infineon Technologies

IPA50R280E6

IPA50R280 - 500V, CoolMOS N-Chan

Infineon Technologies

349 -
Datasheet - - Bulk Obsolete - - - - - - - - - - - - - - - - -
AUIRFN8478TR Infineon Technologies

AUIRFN8478TR

AUIRFN8478 - 20V-40V N-CHANNEL A

Infineon Technologies

21,000 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
IPI072N10N3G Infineon Technologies

IPI072N10N3G

OPTLMOS N-CHANNEL POWER MOSFET

Infineon Technologies

500 -
Datasheet OptiMOS™ 3 TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 6V, 10V 7.2mOhm @ 80A, 10V 3.5V @ 90µA 68 nC @ 10 V ±20V 4910 pF @ 50 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3-1
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FETs, MOSFETs FAQ

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