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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRF9Z34NLPBF Infineon Technologies

IRF9Z34NLPBF

PLANAR 40<-<100V

Infineon Technologies

335 -
Datasheet HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active P-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 620 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
AUIRLU3114Z Infineon Technologies

AUIRLU3114Z

AUIRLU3114Z - 20V-40V N-CHANNEL

Infineon Technologies

3,631 -
Datasheet HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 130A (Tc) 4.5V, 10V 4.9mOhm @ 42A, 10V 2.5V @ 100µA 56 nC @ 4.5 V ±16V 3810 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO251-3
AUIRLU3114Z-701TRL Infineon Technologies

AUIRLU3114Z-701TRL

AUIRLU3114Z - 20V-40V N-CHANNEL

Infineon Technologies

39,000 -
Datasheet HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 4.5V, 10V 4.9mOhm @ 42A, 10V 2.5V @ 100µA 56 nC @ 4.5 V ±16V 3810 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO251-3
IRF40DM229 Infineon Technologies

IRF40DM229

IRF40 - 12V-300V N-CHANNEL POWER

Infineon Technologies

4,194 -
Datasheet StrongIRFET™ DirectFET™ Isometric MF Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 159A (Tc) 6V, 10V 1.85mOhm @ 97A, 10V 3.9V @ 100µA 161 nC @ 10 V ±20V 5317 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DirectFET™ Isometric MF
IRL8114PBF Infineon Technologies

IRL8114PBF

IRL8114 - 12V-300V N-CHANNEL POW

Infineon Technologies

8,800 -
Datasheet HEXFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) - 4.5mOhm @ 40A, 10V 2.25V @ 250µA 29 nC @ 4.5 V ±20V 2660 pF @ 15 V - 115W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRF6797MTRPBF Infineon Technologies

IRF6797MTRPBF

IRF6797 - 12V-300V N-CHANNEL POW

Infineon Technologies

16,950 -
Datasheet HEXFET® DirectFET™ Isometric MX Bulk Active N-Channel MOSFET (Metal Oxide) 25 V 36A (Ta), 210A (Tc) 4.5V, 10V 1.4mOhm @ 38A, 10V 2.35V @ 150µA 68 nC @ 4.5 V ±20V 5790 pF @ 13 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DIRECTFET™ MX
AUIRF1010EZS Infineon Technologies

AUIRF1010EZS

AUIRF1010 - 55V-60V N-CHANNEL AU

Infineon Technologies

412 -
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 10V 8.5mOhm @ 51A, 10V 4V @ 250µA 86 nC @ 10 V ±20V 2810 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
IRF7580MTRPBF Infineon Technologies

IRF7580MTRPBF

IRF7580 - 12V-300V N-CHANNEL POW

Infineon Technologies

1,536 -
Datasheet StrongIRFET™ DirectFET™ Isometric ME Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 114A (Tc) 6V, 10V 3.6mOhm @ 70A, 10V 3.7V @ 150µA 180 nC @ 10 V ±20V 6510 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DirectFET™ Isometric ME
AUIRFS8403 Infineon Technologies

AUIRFS8403

AUIRFS8403 - 20V-40V N-CHANNEL A

Infineon Technologies

6,000 -
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 123A (Tc) 10V 3.3mOhm @ 70A, 10V 3.9V @ 100µA 93 nC @ 10 V ±20V 3183 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
AUIRF1010ZL Infineon Technologies

AUIRF1010ZL

AUIRF1010 - 55V-60V N-CHANNEL AU

Infineon Technologies

5,000 -
Datasheet HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) - 7.5mOhm @ 75A, 10V 4V @ 250µA 95 nC @ 10 V - 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
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FETs, MOSFETs FAQ

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