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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPT60R102G7E8236XTMA1 Infineon Technologies

IPT60R102G7E8236XTMA1

HIGH POWER_NEW

Infineon Technologies

6,778 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
AUIRF1324STRL Infineon Technologies

AUIRF1324STRL

AUIRF1324 - 20V-40V N-CHANNEL AU

Infineon Technologies

316 -
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 24 V 195A (Tc) 10V 1.65mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 7590 pF @ 24 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
AUIRFS4115-7TRL Infineon Technologies

AUIRFS4115-7TRL

MOSFET_(120V,300V)

Infineon Technologies

662 -
Datasheet HEXFET® TO-263-7, D2PAK (6 Leads + Tab) Bulk Active N-Channel MOSFET (Metal Oxide) 150 V 105A (Tc) 10V 11.8mOhm @ 63A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 5320 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK (7-Lead)
AUIRFS4115-7P Infineon Technologies

AUIRFS4115-7P

AUIRFS4115 - 120V-300V N-CHANNEL

Infineon Technologies

35,170 -
Datasheet HEXFET® TO-263-7, D2PAK (6 Leads + Tab) Bulk Active N-Channel MOSFET (Metal Oxide) 150 V 105A (Tc) 10V 11.8mOhm @ 63A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 5320 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK (7-Lead)
AUIRF1404STRL Infineon Technologies

AUIRF1404STRL

MOSFET_(20V,40V)

Infineon Technologies

800 -
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 4mOhm @ 95A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7360 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
BTS114AE3045ANTMA1 Infineon Technologies

BTS114AE3045ANTMA1

POWER FIELD-EFFECT TRANSISTOR, 1

Infineon Technologies

12,000 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active - - - - - - - - - - - - - - - Surface Mount PG-TO220-3-5
IPC313N10N3RX1SA2 Infineon Technologies

IPC313N10N3RX1SA2

TRENCH >=100V

Infineon Technologies

7,784 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
AUIRF1404 Infineon Technologies

AUIRF1404

AUIRF1404 - 20V-40V N-CHANNEL AU

Infineon Technologies

9,000 -
Datasheet HEXFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 10V 4mOhm @ 121A, 10V 4V @ 250µA 196 nC @ 10 V ±20V 5669 pF @ 25 V - 333W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRLML2803TRPBF Infineon Technologies

IRLML2803TRPBF

MOSFET N-CH 30V 1.2A SOT23

Infineon Technologies

830 -
Datasheet HEXFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 1.2A (Ta) 4.5V, 10V 250mOhm @ 910mA, 10V 1V @ 250µA 5 nC @ 10 V ±20V 85 pF @ 25 V - 540mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount Micro3™/SOT-23
BSC007N04LS6ATMA1 Infineon Technologies

BSC007N04LS6ATMA1

MOSFET N-CH 40V 100A TDSON-8-6

Infineon Technologies

34 -
Datasheet OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 381A (Tc) 4.5V, 10V 0.7mOhm @ 50A, 10V 2.3V @ 250µA 94 nC @ 4.5 V ±20V 8400 pF @ 20 V - 188W -55°C ~ 175°C (TJ) - - Surface Mount PG-TDSON-8-6
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