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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IAUCN04S7N056DATMA1 Infineon Technologies

IAUCN04S7N056DATMA1

MOSFET_(20V 40V)

Infineon Technologies

485 -
Datasheet * - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IAUCN04S7L014ATMA1 Infineon Technologies

IAUCN04S7L014ATMA1

MOSFET_(20V 40V)

Infineon Technologies

477 -
Datasheet OptiMOS™ 7 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 120A 10V - - - - - - - -55°C ~ 175°C Automotive AEC-Q101 Surface Mount PG-TDSON-8-34
IPU60R1K5CEAKMA2 Infineon Technologies

IPU60R1K5CEAKMA2

MOSFET N-CH 600V 3.1A TO251-3

Infineon Technologies

924 -
Datasheet CoolMOS™ CE TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 600 V 3.1A (Tc) 10V 1.5Ohm @ 1.1A, 10V 3.5V @ 90µA 9.4 nC @ 10 V ±20V 200 pF @ 100 V - 49W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
ISP16DP10LMAXTSA1 Infineon Technologies

ISP16DP10LMAXTSA1

ISP16DP10LMAXTSA1

Infineon Technologies

1,000 -
Datasheet OptiMOS™ TO-261-4, TO-261AA Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 100 V 2.3A (Ta), 3.9A (Tc) 4.5V, 10V 167mOhm @ 2.2A, 10V 2V @ 1.037mA 55 nC @ 10 V ±20V 2100 pF @ 50 V - 1.8W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-SOT223-4-21
IPP339N20NM6AKSA1 Infineon Technologies

IPP339N20NM6AKSA1

MOSFET

Infineon Technologies

88 -
Datasheet OptiMOS™ 6 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 200 V 6.8A (Ta), 39A (Tc) 10V, 15V 31.8mOhm @ 26A, 15V 4.5V @ 52µA 24 nC @ 10 V ±20V 1600 pF @ 100 V - 3.8W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPB240N04S41R0ATMA1 Infineon Technologies

IPB240N04S41R0ATMA1

MOSFET N-CH 40V 240A TO263-7

Infineon Technologies

43 -
Datasheet OptiMOS™ TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1mOhm @ 100A, 10V 4V @ 180µA 221 nC @ 10 V ±20V 17682 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-7-3
IPI90R500C3XKSA2 Infineon Technologies

IPI90R500C3XKSA2

MOSFET N-CH 900V 11A TO262-3

Infineon Technologies

83 -
Datasheet CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 900 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 3.5V @ 740µA 68 nC @ 10 V ±20V 1700 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3-1
IPA65R110CFDXKSA2 Infineon Technologies

IPA65R110CFDXKSA2

MOSFET N-CH 650V 31.2A TO220

Infineon Technologies

50 -
Datasheet CoolMOS™ CFD2 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 31.2A (Tc) 10V 110mOhm @ 12.7A, 10V 4.5V @ 1.3mA 118 nC @ 10 V ±20V 3240 pF @ 100 V - 34.7W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
AIMCQ120R160M1TXTMA1 Infineon Technologies

AIMCQ120R160M1TXTMA1

SIC_DISCRETE

Infineon Technologies

100 -
Datasheet CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 18.6A (Tc) 18V, 20V 200mOhm @ 5A, 20V 5.1V @ 1.5mA 14 nC @ 20 V +25V, -10V 350 pF @ 800 V - 125W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
AIMCQ120R120M1TXTMA1 Infineon Technologies

AIMCQ120R120M1TXTMA1

SIC_DISCRETE

Infineon Technologies

100 -
Datasheet CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 24A (Tc) 18V, 20V 150mOhm @ 7A, 20V 5.1V @ 2.2mA 18 nC @ 20 V +25V, -10V 458 pF @ 800 V - 161W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
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FETs, MOSFETs FAQ

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