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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IMZC120R078M2HXKSA1 Infineon Technologies

IMZC120R078M2HXKSA1

IMZC120R078M2HXKSA1

Infineon Technologies

90 -
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 28A (Tc) 15V, 18V 78mOhm @ 9A, 18V 5.1V @ 2.8mA 21 nC @ 18 V +23V, -7V 700 pF @ 800 V - 143W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-17
IPQC60T040S7AXTMA1 Infineon Technologies

IPQC60T040S7AXTMA1

AUTOMOTIVE_COOLMOS

Infineon Technologies

75 -
Datasheet CoolMOS™ 22-PowerBSOP Module Box Active N-Channel MOSFET (Metal Oxide) 600 V 54A (Tc) 12V 40mOhm @ 13A, 12V 4.5V @ 780µA 83 nC @ 12 V ±20V 3128 pF @ 300 V - 272W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
AIMZH120R080M1TXKSA1 Infineon Technologies

AIMZH120R080M1TXKSA1

SIC_DISCRETE

Infineon Technologies

17 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 31A (Tc) 18V, 20V 100mOhm @ 10A, 20V 5.1V @ 3.3mA 24 nC @ 20 V +23V, -5V 671 pF @ 800 V - 169W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4-11
IPDQ60T022S7XTMA1 Infineon Technologies

IPDQ60T022S7XTMA1

HIGH POWER_NEW

Infineon Technologies

100 -
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IPP60R016CM8XKSA1 Infineon Technologies

IPP60R016CM8XKSA1

IPP60R016CM8XKSA1

Infineon Technologies

23 -
Datasheet CoolMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 135A (Tc) 10V 16mOhm @ 62.5A, 10V 4.7V @ 1.48mA 171 nC @ 10 V ±20V 7545 pF @ 400 V - 625W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
IPQC60T022S7AXTMA1 Infineon Technologies

IPQC60T022S7AXTMA1

AUTOMOTIVE_COOLMOS

Infineon Technologies

100 -
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IPDQ60T022S7AXTMA1 Infineon Technologies

IPDQ60T022S7AXTMA1

AUTOMOTIVE_COOLMOS

Infineon Technologies

100 -
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
AIMCQ120R040M1TXTMA1 Infineon Technologies

AIMCQ120R040M1TXTMA1

SIC_DISCRETE

Infineon Technologies

90 -
Datasheet CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 61A (Tc) 18V, 20V 50mOhm @ 20A, 20V 5.1V @ 6.4mA 43 nC @ 20 V +25V, -10V 1264 pF @ 800 V - 341W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
IPQC60T017S7XTMA1 Infineon Technologies

IPQC60T017S7XTMA1

HIGH POWER_NEW

Infineon Technologies

100 -
Datasheet CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 113A (Tc) 12V 17mOhm @ 29A, 12V 4.5V @ 1.88mA 196 nC @ 12 V ±20V 7370 pF @ 300 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22
IPDQ60T017S7XTMA1 Infineon Technologies

IPDQ60T017S7XTMA1

HIGH POWER_NEW

Infineon Technologies

68 -
Datasheet CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 113A (Tc) 12V 17mOhm @ 29A, 12V 4.5V @ 1.88mA 196 nC @ 12 V ±20V 7370 pF @ 300 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22-1
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FETs, MOSFETs FAQ

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