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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPA075N15N3GXKSA1 Infineon Technologies

IPA075N15N3GXKSA1

MOSFET N-CH 150V 43A TO220-3

Infineon Technologies

61 -
Datasheet OptiMOS™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 150 V 43A (Tc) 8V, 10V 7.5mOhm @ 43A, 10V 4V @ 270µA 93 nC @ 10 V ±20V 7280 pF @ 75 V - 39W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-FP
IMZA65R039M1HXKSA1 Infineon Technologies

IMZA65R039M1HXKSA1

SILICON CARBIDE MOSFET, PG-TO247

Infineon Technologies

83 -
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 50A (Tc) 18V 50mOhm @ 25A, 18V 5.7V @ 7.5mA 41 nC @ 18 V +20V, -2V 1393 pF @ 400 V - 176W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-3
ISP20EP10LMXTSA1 Infineon Technologies

ISP20EP10LMXTSA1

SMALL SIGNAL MOSFETS PG-SOT223-4

Infineon Technologies

1,000 -
Datasheet OptiMOS™ TO-261-4, TO-261AA Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 100 V 650mA (Ta), 990mA (Tc) 4.5V, 10V 2Ohm @ 600mA, 10V 2V @ 78µA 3.5 nC @ 10 V ±20V 170 pF @ 50 V - 1.8W (Ta), 4.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT223-4
IRF60B217 Infineon Technologies

IRF60B217

MOSFET N-CH 60V 60A TO220AB

Infineon Technologies

7,642 -
Datasheet StrongIRFET™ TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 6V, 10V 9mOhm @ 36A, 10V 3.7V @ 50µA 66 nC @ 10 V ±20V 2230 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IPA60R280P7XKSA1 Infineon Technologies

IPA60R280P7XKSA1

MOSFET N-CH 600V 12A TO220

Infineon Technologies

6,858 -
Datasheet CoolMOS™ P7 TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 280mOhm @ 3.8A, 10V 4V @ 190µA 18 nC @ 10 V ±20V 761 pF @ 400 V - 24W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
IPI029N06NAKSA1 Infineon Technologies

IPI029N06NAKSA1

MOSFET N-CH 60V 24A/100A TO262-3

Infineon Technologies

26 -
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 60 V 24A (Ta), 100A (Tc) 6V, 10V 2.9mOhm @ 100A, 10V 2.8V @ 75µA 56 nC @ 10 V ±20V 4100 pF @ 30 V - 3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPDD60R190G7XTMA1 Infineon Technologies

IPDD60R190G7XTMA1

MOSFET N-CH 600V 13A HDSOP-10

Infineon Technologies

65 -
Datasheet CoolMOS™ G7 10-PowerSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 190mOhm @ 4.2A, 10V 4V @ 210µA 18 nC @ 10 V ±20V 718 pF @ 400 V - 76W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-10-1
IPDD60R170CFD7XTMA1 Infineon Technologies

IPDD60R170CFD7XTMA1

MOSFET N-CH 600V 19A HDSOP-10

Infineon Technologies

37 -
Datasheet CoolMOS™ CFD7 10-PowerSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) - 170mOhm @ 4.9A, 10V 4.5V @ 240µA 23 nC @ 10 V ±20V 1016 pF @ 400 V - 137W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-10-1
IPW65R190C7XKSA1 Infineon Technologies

IPW65R190C7XKSA1

MOSFET N-CH 650V 13A TO247-3

Infineon Technologies

85 -
Datasheet CoolMOS™ C7 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 13A (Tc) 10V 190mOhm @ 5.7A, 10V 4V @ 290µA 23 nC @ 10 V ±20V 1150 pF @ 400 V - 72W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3
IPW60R125CFD7XKSA1 Infineon Technologies

IPW60R125CFD7XKSA1

MOSFET N-CH 600V 18A TO247-3

Infineon Technologies

30 -
Datasheet OptiMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 125mOhm @ 7.8A, 10V 4.5V @ 390µA 36 nC @ 10 V ±20V 1503 pF @ 400 V - 92W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3
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FETs, MOSFETs FAQ

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Use the available manufacturer and technical filters to compare matching parts by specifications, stock status, pricing and datasheet information.

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