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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRFP4768PBFXKMA1 Infineon Technologies

IRFP4768PBFXKMA1

TRENCH >=100V

Infineon Technologies

388 -
Datasheet HEXFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 250 V 93A (Tc) 10V 17.5mOhm @ 56A, 10V 5V @ 250µA 270 nC @ 10 V ±20V 10880 pF @ 50 V - 520W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-3-901
IMBG40R036M2HXTMA1 Infineon Technologies

IMBG40R036M2HXTMA1

SIC-MOS

Infineon Technologies

984 -
Datasheet CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 400 V 7.6A (Ta), 50A (Tc) 15V, 18V 45.7mOhm @ 11.1A, 18V 5.6V @ 4mA 26 nC @ 18 V +23V, -7V 1170 pF @ 200 V - 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-11
IPTG029N13NM6ATMA1 Infineon Technologies

IPTG029N13NM6ATMA1

TRENCH >=100V

Infineon Technologies

1,800 -
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IPT009N06NM5ATMA1 Infineon Technologies

IPT009N06NM5ATMA1

TRENCH 40<-<100V

Infineon Technologies

1,990 -
Datasheet OptiMOS™ 5 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 48A (Ta), 427A (Tc) 6V, 10V 0.9mOhm @ 150A, 10V 3.3V @ 220µA 257 nC @ 10 V ±20V 16000 pF @ 30 V - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8
IMLT65R060M2HXTMA1 Infineon Technologies

IMLT65R060M2HXTMA1

SILICON CARBIDE MOSFET

Infineon Technologies

364 -
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
GS-065-011-2-L-MR Infineon Technologies Canada Inc.

GS-065-011-2-L-MR

GS-065-011-2-L-MR

Infineon Technologies Canada Inc.

180 -
Datasheet - 8-VDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 6V 195mOhm @ 3.2A, 6V 2.6V @ 2.4mA 2.2 nC @ 6 V +7V, -10V 70 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFN (8x8)
IPB65R075CFD7AATMA1 Infineon Technologies

IPB65R075CFD7AATMA1

AUTOMOTIVE_COOLMOS PG-TO263-3

Infineon Technologies

826 -
Datasheet CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 32A (Tc) 10V 75mOhm @ 16.4A, 10V 4.5V @ 820µA 68 nC @ 10 V ±20V 3288 pF @ 400 V - 171W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3
IPT026N12NM6ATMA1 Infineon Technologies

IPT026N12NM6ATMA1

IPT026N12NM6ATMA1

Infineon Technologies

1,910 -
Datasheet OptiMOS™ 6 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120 V 23A (Ta), 224A (Tc) 8V, 10V 2.6mOhm @ 115A, 10V 3.6V @ 169µA 88 nC @ 10 V ±20V 6500 pF @ 60 V - 3W (Ta), 283W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8-1
IMZA75R090M1HXKSA1 Infineon Technologies

IMZA75R090M1HXKSA1

SILICON CARBIDE MOSFET

Infineon Technologies

218 -
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 23A (Tj) 15V, 20V 83mOhm @ 7.4A, 20V 5.6V @ 2.6mA 15 nC @ 18 V +23V, -5V 542 pF @ 500 V - 113W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4
IPT65R060CFD7XTMA1 Infineon Technologies

IPT65R060CFD7XTMA1

HIGH POWER_NEW

Infineon Technologies

1,988 -
Datasheet - 8-PowerSFN Tape & Reel (TR) Active - - 650 V - - - - - - - - - - - - Surface Mount PG-HSOF-8-3
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FETs, MOSFETs FAQ

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