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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPT017N10NM5LF2ATMA1 Infineon Technologies

IPT017N10NM5LF2ATMA1

IPT017N10NM5LF2ATMA1

Infineon Technologies

2,000 -
Datasheet OptiMOS™ 5 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 32A (Ta), 321A (Tc) 10V, 15V 1.6mOhm @ 150A, 15V 3.9V @ 280µA 206 nC @ 10 V ±20V 17000 pF @ 50 V - 3.8W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8-1
IMT65R083M1HXUMA1 Infineon Technologies

IMT65R083M1HXUMA1

SILICON CARBIDE MOSFET

Infineon Technologies

1,726 -
Datasheet CoolSiC™ 8-PowerSFN Tape & Reel (TR) Active - SiCFET (Silicon Carbide) 650 V - 18V - - - - - - - - - - Surface Mount PG-HSOF-8-2
IPDQ60R037CM8XTMA1 Infineon Technologies

IPDQ60R037CM8XTMA1

IPDQ60R037CM8XTMA1

Infineon Technologies

750 -
Datasheet CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 65A (Tj) 10V 37mOhm @ 27A, 10V 4.7V @ 680µA 79 nC @ 10 V ±20V 3459 pF @ 400 V - 338W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22
IMDQ75R060M1HXUMA1 Infineon Technologies

IMDQ75R060M1HXUMA1

IMDQ75R060M1HXUMA1

Infineon Technologies

705 -
Datasheet CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 34A (Tc) 15V, 20V 55mOhm @ 11.1A, 20V 5.6V @ 4mA 23 nC @ 18 V +20V, -2V 779 pF @ 500 V - 167W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HDSOP-22-1
IPDQ60T040S7AXTMA1 Infineon Technologies

IPDQ60T040S7AXTMA1

AUTOMOTIVE_COOLMOS

Infineon Technologies

750 -
Datasheet CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 54A (Tc) 12V 40mOhm @ 13A, 12V 4.5V @ 780µA 83 nC @ 12 V ±20V 3128 pF @ 300 V - 272W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22-1
IMLT65R050M2HXTMA1 Infineon Technologies

IMLT65R050M2HXTMA1

SILICON CARBIDE MOSFET

Infineon Technologies

315 -
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IPB029N15NM6ATMA1 Infineon Technologies

IPB029N15NM6ATMA1

TRENCH >=100V

Infineon Technologies

1,830 -
Datasheet OptiMOS™ 6 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 24A (Ta), 165A (Tc) 8V, 15V 2.8mOhm @ 100A, 15V 4V @ 276µA 137 nC @ 10 V ±20V 9900 pF @ 75 V - 3.8W (Ta), 395W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
GS-065-014-6-L-MR Infineon Technologies Canada Inc.

GS-065-014-6-L-MR

GS-065-014-6-L-MR

Infineon Technologies Canada Inc.

241 -
Datasheet - 8-PowerVDFN Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 700 V 15.2A (Tc) 6V 138mOhm @ 4A, 6V 2.6V @ 3mA 2.7 nC @ 6 V +7V, -10V 85 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFN (5x6)
AIMBG75R060M1HXTMA1 Infineon Technologies

AIMBG75R060M1HXTMA1

AIMBG75R060M1HXTMA1

Infineon Technologies

2,497 -
Datasheet CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 34A (Tj) 15V, 20V 55mOhm @ 11.1A, 20V 5.6V @ 4mA 23 nC @ 18 V +23V, -5V 779 pF @ 500 V - 167W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-7
IPZ60R060C7XKSA1 Infineon Technologies

IPZ60R060C7XKSA1

MOSFET N-CH 600V 35A TO247-4

Infineon Technologies

229 -
Datasheet CoolMOS™ C7 TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 60mOhm @ 15.9A, 10V 4V @ 800µA 68 nC @ 10 V ±20V 2850 pF @ 400 V - 162W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-4
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FETs, MOSFETs FAQ

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