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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IMW65R050M2HXKSA1 Infineon Technologies

IMW65R050M2HXKSA1

SILICON CARBIDE MOSFET

Infineon Technologies

207 -
Datasheet CoolSiC™ Gen 2 TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 38A (Tc) 15V, 20V 46mOhm @ 18.2A, 20V 5.6V @ 3.7mA 22 nC @ 18 V +23V, -7V 790 pF @ 400 V - 153W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-3-40
IPDQ65R040CFD7XTMA1 Infineon Technologies

IPDQ65R040CFD7XTMA1

HIGH POWER_NEW

Infineon Technologies

744 -
Datasheet CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 64A (Tc) 10V 40mOhm @ 24.8A, 10V 4.5V @ 1.24mA 97 nC @ 10 V ±20V 4975 pF @ 400 V - 357W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22-1
IPT020N13NM6ATMA1 Infineon Technologies

IPT020N13NM6ATMA1

TRENCH >=100V

Infineon Technologies

1,416 -
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
GS-065-014-6-LR-MR Infineon Technologies Canada Inc.

GS-065-014-6-LR-MR

GS-065-014-6-LR-MR

Infineon Technologies Canada Inc.

227 -
Datasheet - 8-VDFN Exposed Pad Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 700 V 15.2A (Tc) 6V 138mOhm @ 4A, 6V 2.6V @ 3mA 2.7 nC @ 6 V +7V, -10V 85 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFN (8x8)
IMT65R072M1HXUMA1 Infineon Technologies

IMT65R072M1HXUMA1

SILICON CARBIDE MOSFET

Infineon Technologies

1,919 -
Datasheet CoolSiC™ 8-PowerSFN Tape & Reel (TR) Active - SiCFET (Silicon Carbide) 650 V - 18V - - - - - - - - - - Surface Mount PG-HSOF-8-2
IMZA65R050M2HXKSA1 Infineon Technologies

IMZA65R050M2HXKSA1

SILICON CARBIDE MOSFET

Infineon Technologies

205 -
Datasheet CoolSiC™ Gen 2 TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 38A (Tc) 15V, 20V 46mOhm @ 18.2A, 20V 5.6V @ 3.7mA 22 nC @ 18 V +23V, -7V 790 pF @ 400 V - 153W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-8
IMT40R025M2HXTMA1 Infineon Technologies

IMT40R025M2HXTMA1

SIC-MOS

Infineon Technologies

1,988 -
Datasheet CoolSiC™ 8-PowerSFN Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 400 V 9A (Ta), 68A (Tc) 15V, 18V 32.1mOhm @ 15.7A, 18V 5.6V @ 5.6mA 36 nC @ 18 V +23V, -7V 1690 pF @ 200 V - 3.8W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8-2
IMZA75R060M1HXKSA1 Infineon Technologies

IMZA75R060M1HXKSA1

SILICON CARBIDE MOSFET

Infineon Technologies

238 -
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 32A (Tc) 15V, 20V 55mOhm @ 11.1A, 20V 5.6V @ 4mA 23 nC @ 18 V +23V, -5V 779 pF @ 500 V - 144W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4
IPTG020N13NM6ATMA1 Infineon Technologies

IPTG020N13NM6ATMA1

TRENCH >=100V

Infineon Technologies

1,488 -
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IPQC60R040S7AXTMA1 Infineon Technologies

IPQC60R040S7AXTMA1

MOSFET

Infineon Technologies

730 -
Datasheet CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 12V 40mOhm @ 13A, 12V 4.5V @ 790µA 83 nC @ 12 V ±20V - - 272W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
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FETs, MOSFETs FAQ

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