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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRFI840GLC Vishay Siliconix

IRFI840GLC

MOSFET N-CH 500V 4.5A TO220-3

Vishay Siliconix

9,294 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 850mOhm @ 2.7A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
SIHS36N50D-E3 Vishay Siliconix

SIHS36N50D-E3

MOSFET N-CH 500V 36A SUPER-247

Vishay Siliconix

8,056 -
Datasheet - TO-274AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 36A (Tc) 10V 130mOhm @ 18A, 10V 5V @ 250µA 125 nC @ 10 V ±30V 3233 pF @ 100 V - 446W (Tc) -55°C ~ 150°C (TJ) - - Through Hole SUPER-247™ (TO-274AA)
IRFIZ48G Vishay Siliconix

IRFIZ48G

MOSFET N-CH 60V 37A TO220-3

Vishay Siliconix

8,345 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 37A (Tc) 10V 18mOhm @ 22A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 50W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
IRFI9640G Vishay Siliconix

IRFI9640G

MOSFET P-CH 200V 6.1A TO220-3

Vishay Siliconix

5,739 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Obsolete P-Channel MOSFET (Metal Oxide) 200 V 6.1A (Tc) 10V 500mOhm @ 3.7A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1200 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
IRLI640G Vishay Siliconix

IRLI640G

MOSFET N-CH 200V 9.9A TO220-3

Vishay Siliconix

8,762 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.9A (Tc) 4V, 5V 180mOhm @ 5.9A, 5V 2V @ 250µA 66 nC @ 10 V ±10V 1800 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
SI7788DP-T1-GE3 Vishay Siliconix

SI7788DP-T1-GE3

MOSFET N-CH 30V 50A PPAK SO-8

Vishay Siliconix

9,580 -
Datasheet TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 3.1mOhm @ 15A, 10V 2.5V @ 250µA 125 nC @ 10 V ±20V 5370 pF @ 15 V - 5.2W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SUV85N10-10-E3 Vishay Siliconix

SUV85N10-10-E3

MOSFET N-CH 100V 85A TO220AB

Vishay Siliconix

6,192 -
Datasheet TrenchFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 85A (Tc) 4.5V, 10V 10.5mOhm @ 30A, 10V 3V @ 250µA 160 nC @ 10 V ±20V 6550 pF @ 25 V - 3.75W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
SQ4840EY-T1_BE3 Vishay Siliconix

SQ4840EY-T1_BE3

MOSFET N-CH 40V 20.7A 8SOIC

Vishay Siliconix

6,438 -
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 20.7A (Tc) 4.5V, 10V 9mOhm @ 14A, 10V 2.5V @ 250µA 62 nC @ 10 V ±20V 2440 pF @ 20 V - 7.1W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-SOIC
SI4890DY-T1-E3 Vishay Siliconix

SI4890DY-T1-E3

MOSFET N-CH 30V 11A 8-SOIC

Vishay Siliconix

6,019 -
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 12mOhm @ 11A, 10V 800mV @ 250µA (Min) 20 nC @ 5 V ±25V - - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
IRF9640S Vishay Siliconix

IRF9640S

MOSFET P-CH 200V 11A D2PAK

Vishay Siliconix

2,469 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete P-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1200 pF @ 25 V - 3W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
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FETs, MOSFETs FAQ

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