PRODUCT DIRECTORY

FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IMLT65R040M2HXTMA1 Infineon Technologies

IMLT65R040M2HXTMA1

SILICON CARBIDE MOSFET

Infineon Technologies

327 -
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
S2M0080120J SMC Diode Solutions

S2M0080120J

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions

230 -
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 37A (Tj) 20V 100mOhm @ 20A, 20V 4V @ 10mA 54 nC @ 20 V +20V, -5V 1324 pF @ 1000 V - 234W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
NTHL032N065M3S onsemi

NTHL032N065M3S

SIC MOS TO247-3L 32MOHM 650V M3S

onsemi

815 -
Datasheet - TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 51A (Tc) 15V, 18V 44mOhm @ 15A, 18V 4V @ 7.5mA 55 nC @ 18 V +22V, -8V 1410 pF @ 400 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3
IPDQ65R040CFD7AXTMA1 Infineon Technologies

IPDQ65R040CFD7AXTMA1

AUTOMOTIVE_COOLMOS

Infineon Technologies

392 -
Datasheet CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 64A (Tc) 10V 40mOhm @ 24.8A, 10V 4.5V @ 1.24mA 97 nC @ 10 V ±20V 4975 pF @ 400 V - 357W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22-1
IPQC65R040CFD7AXTMA1 Infineon Technologies

IPQC65R040CFD7AXTMA1

AUTOMOTIVE_COOLMOS

Infineon Technologies

200 -
Datasheet CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 64A (Tc) 10V 40mOhm @ 24.8A, 10V 4.5V @ 1.24mA 97 nC @ 10 V ±20V 4975 pF @ 400 V - 357W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22-1
IPZA60R037CM8XKSA1 Infineon Technologies

IPZA60R037CM8XKSA1

IPZA60R037CM8XKSA1

Infineon Technologies

195 -
Datasheet CoolMOS™ TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 64A (Tj) 10V 37mOhm @ 27A, 10V 4.7V @ 680µA 79 nC @ 10 V ±20V 3458 pF @ 400 V - 329W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-4-U02
IPT65R040CFD7XTMA1 Infineon Technologies

IPT65R040CFD7XTMA1

MOSFET N-CH 650V 8HSOF

Infineon Technologies

2,000 -
Datasheet CoolMOS™ CFD7 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V - - - - - - - - - - - - Surface Mount PG-HSOF-8-2
SCT3105KRHRC15 Rohm Semiconductor

SCT3105KRHRC15

1200V, 24A, 4-PIN THD, TRENCH-ST

Rohm Semiconductor

440 -
Datasheet - TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 24A (Tc) 18V 137mOhm @ 7.6A, 18V 5.6V @ 3.81mA 51 nC @ 18 V +22V, -4V 574 pF @ 800 V - 134W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
IMTA65R040M2HXTMA1 Infineon Technologies

IMTA65R040M2HXTMA1

SILICON CARBIDE MOSFET

Infineon Technologies

150 -
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
NVMFS5C604NWFT1G onsemi

NVMFS5C604NWFT1G

NFET SO8FL 60V 287A 1.2MO

onsemi

1,500 -
Datasheet - 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10 V 40A (Ta), 287A (Tc) 4.5V, 10V 1.2mOhm @ 50A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 6400 pF @ 25 V - 3.9W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
TK31V60W,LVQ Toshiba Semiconductor and Storage

TK31V60W,LVQ

MOSFET N-CH 600V 30.8A 4DFN

Toshiba Semiconductor and Storage

2,455 -
Datasheet DTMOSIV 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 98mOhm @ 15.4A, 10V 3.7V @ 1.5mA 86 nC @ 10 V ±30V 3000 pF @ 300 V - 240W (Tc) 150°C (TJ) - - Surface Mount 4-DFN-EP (8x8)
IMT65R057M1HXUMA1 Infineon Technologies

IMT65R057M1HXUMA1

SILICON CARBIDE MOSFET

Infineon Technologies

1,983 -
Datasheet CoolSiC™ 8-PowerSFN Tape & Reel (TR) Active - SiCFET (Silicon Carbide) 650 V - 18V - - - - - - - - - - Surface Mount PG-HSOF-8-2
PSMNR90-80CSFJ Nexperia USA Inc.

PSMNR90-80CSFJ

PSMNR90-80CSF/SOT8005A/CCPAK12

Nexperia USA Inc.

250 -
Datasheet - 12-BESOP (0.370", 9.40mm Width), Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 505A (Tc) 10V 0.9mOhm @ 25A, 10V 4V @ 1mA 463 nC @ 10 V ±20V 32115 pF @ 40 V - 1.55kW (Tc) -55°C ~ 175°C (TJ) - - Surface Mount CCPAK1212i
PSMNR90-80ASFJ Nexperia USA Inc.

PSMNR90-80ASFJ

PSMNR90-80ASF/SOT8000A/CCPAK12

Nexperia USA Inc.

250 -
Datasheet - 12-BESOP (0.370", 9.40mm Width), Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 505A (Tc) 10V 0.85mOhm @ 25A, 10V 4V @ 1mA 463 nC @ 10 V ±20V 32115 pF @ 40 V - 1.55kW (Tc) -55°C ~ 175°C (TJ) - - Surface Mount CCPAK1212
SIHK055N60EF-T1GE3 Vishay Siliconix

SIHK055N60EF-T1GE3

E SERIES POWER MOSFET WITH FAST

Vishay Siliconix

2,040 -
Datasheet EF 8-PowerBSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 58mOhm @ 16A, 10V 5V @ 250µA 90 nC @ 10 V ±30V 3667 pF @ 100 V - 236W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK®10 x 12
PSMN1R0-100CSFJ Nexperia USA Inc.

PSMN1R0-100CSFJ

PSMN1R0-100CSF/SOT8005A/CCPAK1

Nexperia USA Inc.

250 -
Datasheet - 12-BESOP (0.370", 9.40mm Width), Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 460A (Tc) 10V 1.04mOhm @ 25A, 10V 4V @ 1mA 539 nC @ 10 V ±20V 33624 pF @ 50 V - 1.55kW (Tc) -55°C ~ 175°C (TJ) - - Surface Mount CCPAK1212i
E4M0060075K1 Wolfspeed, Inc.

E4M0060075K1

MOSFETS AUTOMOTIVE 126W 3.8V NC

Wolfspeed, Inc.

440 -
Datasheet E TO-247-4 Bulk Active N-Channel SiCFET (Silicon Carbide) 750 V 35A (Tc) 15V 78mOhm @ 13.4A, 15V 3.8V @ 3.67mA 52 nC @ 15 V +19V, -8V 1203 pF @ 500 V - 126W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
NTH4L032N065M3S onsemi

NTH4L032N065M3S

SIC MOS TO247-4L 32MOHM 650V M3S

onsemi

618 -
Datasheet - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 50A (Tc) 15V, 18V 44mOhm @ 15A, 18V 4V @ 7.5mA 55 nC @ 18 V +22V, -8V 1410 pF @ 400 V - 187W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
PJMK074N60FRCH_T0_00201 Panjit International Inc.

PJMK074N60FRCH_T0_00201

600V/ 74M / 53A/ FAST RECOVERY Q

Panjit International Inc.

1,500 -
Datasheet - - Tube Active - - - - - - - - - - - - - - - - -
STWA67N60M6 STMicroelectronics

STWA67N60M6

MOSFET N-CH 600V 52A TO247

STMicroelectronics

555 -
Datasheet MDmesh™ M6 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 52A (Tc) 10V 49mOhm @ 26A, 10V 4.75V @ 250µA 72.5 nC @ 10 V ±25V 3400 pF @ 100 V - 330W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 Long Leads
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FETs, MOSFETs FAQ

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