FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IMZC120R040M2HXKSA1 IMZC120R040M2HXKSA1 Infineon Technologies	240	-	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	48A (Tc)	15V, 18V	40mOhm @ 18A, 18V	5.1V @ 5.5mA	39 nC @ 18 V	+23V, -7V	1310 pF @ 800 V	-	218W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-17
G3F45MT06J-TR 650V 40M TO-263-7 G3F SIC MOSFET GeneSiC Semiconductor	800	-	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	56A (Tc)	15V, 18V	54mOhm @ 20A, 18V	4.3V @ 8mA	55 nC @ 18 V	+22V, -10V	1640 pF @ 400 V	-	187W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263-7
G3F65MT12J-TR 1200V 65M TO-263-7 G3F SIC MOSFE GeneSiC Semiconductor	800	-	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	37A (Tc)	18V	86mOhm @ 15A, 18V	4.3V @ 10mA	55 nC @ 18 V	+22V, -10V	1298 pF @ 800 V	-	171W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263-7
R6061YNZ4C13 NCH 600V 61A, TO-247, POWER MOSF Rohm Semiconductor	588	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	61A (Tc)	10V, 12V	60mOhm @ 13A, 12V	6V @ 3.5mA	76 nC @ 10 V	±30V	3700 pF @ 100 V	-	568W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247
IPT60T022S7XTMA1 HIGH POWER_NEW Infineon Technologies	218	-	RFQ	Datasheet	CoolMOS™	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	23A (Tj)	12V	22mOhm @ 23A, 12V	4.5V @ 1.43mA	150 nC @ 12 V	±20V	5640 pF @ 300 V	-	390W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HSOF-8-2
G3F65MT12K 1200V 65M TO-247-4 G3F SIC MOSFE GeneSiC Semiconductor	600	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	35A (Tc)	18V	86mOhm @ 15A, 18V	4.3V @ 10mA	55 nC @ 18 V	+22V, -10V	1298 pF @ 800 V	-	153W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4
C3M0060075K1 SICFET N-CH 750V 35A TO247 Wolfspeed, Inc.	389	-	RFQ	Datasheet	-	TO-247-4	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	35A (Tc)	15V	78mOhm @ 13.4A, 15V	3.8V @ 3.67mA	52 nC @ 15 V	-8V, +19V	1203 pF @ 500 V	-	126W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4L
C3M0160120J-TR SIC, MOSFET, 160M, 1200V, TO-263 Wolfspeed, Inc.	300	-	RFQ	Datasheet	C3M™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	17A (Tc)	15V	208mOhm @ 8.5A, 15V	3.6V @ 2.33mA	24 nC @ 15 V	+15V, -4V	632 pF @ 1000 V	-	90W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263-7
C3M0160120K1 MOSFET N-CH 1200V 17.9A TO247-4L Wolfspeed, Inc.	229	-	RFQ	Datasheet	-	TO-247-4	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	17.9A (Tc)	15V	208mOhm @ 8.5A, 15V	3.8V @ 2.33mA	32 nC @ 15 V	+19V, -8V	730 pF @ 1000 V	-	103W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4L
IPQC60T022S7XTMA1 HIGH POWER_NEW Infineon Technologies	750	-	RFQ	Datasheet	CoolMOS™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	90A (Tc)	12V	22mOhm @ 23A, 12V	4.5V @ 1.43mA	150 nC @ 12 V	±20V	5640 pF @ 300 V	-	416W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-22-1
NVHL075N065SC1 SILICON CARBIDE (SIC) MOSFET, NC onsemi	446	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	38A (Tc)	15V, 18V	85mOhm @ 15A, 18V	4.3V @ 5mA	61 nC @ 18 V	+22V, -8V	1196 pF @ 325 V	-	148W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-3
STL57N65M5 MOSFET N-CH 650V 4.3A 8POWERFLAT STMicroelectronics	5,445	-	RFQ	Datasheet	MDmesh™ V	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	650 V	4.3A (Ta), 22.5A (Tc)	10V	69mOhm @ 20A, 10V	5V @ 250µA	110 nC @ 10 V	±25V	4200 pF @ 100 V	-	2.8W (Ta), 189W (Tc)	150°C (TJ)	-	-	Surface Mount	PowerFlat™ (8x8) HV
NSF080120D7A0J NSF080120D7A0/SOT8070/TO263-7L Nexperia USA Inc.	797	-	RFQ	Datasheet	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SICW040N120H-BP SIC MOSFET,TO-247AB Micro Commercial Co	360	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	62A (Tc)	20V	52mOhm @ 30A, 20V	4.5V @ 40mA	229 nC @ 20 V	+25V, -10V	3619 pF @ 800 V	-	326W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AB
E4M0060075J2-TR MOSFETS 1205 PF 131W 3.8V 50 NC Wolfspeed, Inc.	494	-	RFQ	Datasheet	E	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	36A (Tc)	15V	78mOhm @ 13.4A, 15V	3.8V @ 3.67mA	50 nC @ 15 V	+19V, -8V	1205 pF @ 500 V	-	131W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263-7
NVH4L050N65S3F SF3 FRFET AUTO 50MOHM TO-247-4L onsemi	405	-	RFQ	Datasheet	SuperFET® III, FRFET®	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	58A (Tc)	10V	50mOhm @ 29A, 10V	5V @ 1.7mA	123.8 nC @ 10 V	±30V	4855 pF @ 400 V	-	403W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-4L
SICW040N120H4-BP SIC MOSFET,TO-247-4 Micro Commercial Co	360	-	RFQ	Datasheet	-	TO-247-4	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	62A (Tc)	20V	52mOhm @ 30A, 20V	4.5V @ 40mA	229 nC @ 20 V	+20V, -5V	3619 pF @ 800 V	-	326W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
E3M0160120K SICFET N-CH 1.2KV 17.9A TO-247-4 Wolfspeed, Inc.	287	-	RFQ	Datasheet	E	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	17.9A (Tc)	15V	208mOhm @ 8.5A, 15V	3.6V @ 2.33mA	32 nC @ 15 V	-8V, +19V	730 pF @ 1000 V	-	103W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L
APT5017BVRG MOSFET N-CH 500V 30A TO247 Microchip Technology	243	-	RFQ	Datasheet	POWER MOS V®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	30A (Tc)	-	170mOhm @ 500mA, 10V	4V @ 1mA	300 nC @ 10 V	-	5280 pF @ 25 V	-	-	-	-	-	Through Hole	TO-247 [B]
NVH4L075N065SC1 SIC MOS TO247-4L 650V onsemi	240	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	38A (Tc)	15V, 18V	85mOhm @ 15A, 18V	4.3V @ 5mA	61 nC @ 18 V	+22V, -8V	1196 pF @ 325 V	-	148W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L

FETs, MOSFETs FAQ

What FETs, MOSFETs components can I source from EGOO?

You can browse available FETs, MOSFETs product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete FETs, MOSFETs parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

Does EGOO support BOM and small-batch sourcing?

Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

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