FETs, MOSFETs
Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.
If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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C3M0025065J1-TRSIC, MOSFET 25 M, 650V TO-263-7X |
780 | - |
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Datasheet | C3M™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 80A (Tc) | 15V | 34mOhm @ 33.5A, 15V | 3.6V @ 9.22mA | 109 nC @ 15 V | +19V, -8V | 2980 pF @ 400 V | - | 271W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263-7 |
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NVHL015N065SC1SIC MOS TO247-3L 650V |
447 | - |
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Datasheet | - | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 163A (Tc) | 15V, 18V | 18mOhm @ 75A, 12V | 4.3V @ 25mA | 283 nC @ 18 V | +22V, -8V | 4790 pF @ 325 V | - | 643W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
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E3M0021120J2-TR21m, 1200V SiC FET, TO-263-7 XL |
488 | - |
|
Datasheet | E | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 114A (Tc) | 15V | 29mOhm @ 62.12A, 15V | 3.8V @ 17.1mA | 169 nC @ 15 V | +19V, -8V | 5100 pF @ 1000 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
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AIMZA75R008M1HXKSA1AUTOMOTIVE_SICMOS |
240 | - |
|
Datasheet | CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 750 V | 163A (Tc) | 15V, 20V | 7.2mOhm @ 90.3A, 20V | 5.6V @ 32.4mA | 178 nC @ 18 V | +23V, -5V | 6137 pF @ 500 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4-U02 |
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IMZA75R008M1HXKSA1SILICON CARBIDE MOSFET |
240 | - |
|
Datasheet | CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 750 V | 163A (Tc) | 15V, 20V | 7.2mOhm @ 90.3A, 20V | 5.6V @ 32.4mA | 178 nC @ 500 V | +23V, -5V | 6137 pF @ 500 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-U02 |
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NCV81342CBATXGMOSFET |
1,000 | - |
|
Datasheet | - | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPD030N03LF2SATMA1MOSFET N-CH 30V 160A DPAK |
2,000 | - |
|
Datasheet | StrongIRFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 24A (Ta), 99A (Tc) | 4.5V, 10V | 3.05mOhm @ 60A, 10V | 2.35V @ 40µA | 50 nC @ 10 V | ±20V | 2200 pF @ 15 V | - | 3W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-34 |
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APT60M75L2FLLGMOSFET N-CH 600V 73A 264 MAX |
82 | - |
|
Datasheet | POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 73A (Tc) | 10V | 75mOhm @ 36.5A, 10V | 5V @ 5mA | 195 nC @ 10 V | ±30V | 8930 pF @ 25 V | - | 893W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | 264 MAX™ [L2] |
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C3M0016120K1MOSFET N-CH 1200V 125A TO247-4L |
325 | - |
|
Datasheet | - | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 125A (Tc) | 15V | 22mOhm @ 80.28A, 15V | 3.8V @ 22.08mA | 223 nC @ 15 V | +19V, -8V | 6922 pF @ 1000 V | - | 483W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
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APL502B2GMOSFET N-CH 500V 58A T-MAX |
106 | - |
|
Datasheet | - | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 58A (Tc) | 15V | 90mOhm @ 29A, 12V | 4V @ 2.5mA | - | ±30V | 9000 pF @ 25 V | - | 730W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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DIW120SIC022-AQSIC MOSFET, TO-247-3L, N, 120A, |
150 | - |
|
Datasheet | - | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 120A (Tc) | 18V | 22.3mOhm @ 75A, 18V | 4V @ 23.5mA | 269 nC @ 18 V | +18V, -4V | 4817 pF @ 1000 V | - | 340W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247 |
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DIF120SIC022-AQSIC MOSFET, TO-247-4L, N, 120A, |
150 | - |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 120A (Tc) | 18V | 22.3mOhm @ 75A, 18V | 4V @ 23.5mA | 269 nC @ 18 V | +18V, -4V | 4817 pF @ 1000 V | - | 340W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
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TW015Z120C,S1FG3 1200V SIC-MOSFET TO-247-4L 1 |
68 | - |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 100A (Tc) | 18V | 21mOhm @ 50A, 18V | 5V @ 11.7mA | 158 nC @ 18 V | +25V, -10V | 6000 pF @ 800 V | - | 431W (Tc) | 175°C | - | - | Through Hole | TO-247-4L(X) |
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IXFN55N120SKSIC AND MULTICHIP DISCRETE |
182 | - |
|
Datasheet | - | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 54A (Tc) | 15V | 42mOhm @ 40A, 15V | 3.6V @ 12mA | 107 nC @ 15 V | +15V, -4V | 3360 pF @ 1000 V | - | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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DIW120SIC023-AQMOSFET TO-247-3L N 130A 1200V |
705 | - |
|
Datasheet | - | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 125A (Tc) | 18V | 23mOhm @ 75A, 18V | 2.9V @ 250µA | 45 nC @ 18 V | - | 6150 pF @ 1000 V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247 |
|
DF17MR12W1M1HFB68BPSA1LOW POWER EASY |
33 | - |
|
Datasheet | EasyPACK™ | Module | Tray | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 45A (Tj) | 15V, 18V | 16.2mOhm @ 50A, 18V | 5.15V @ 20mA | 149 nC @ 18 V | +20V, -7V | 4400 pF @ 800 V | - | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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CDA04N30X1CGANFET 40V 30A .004 OHM 4DAPT |
88 | - |
|
Datasheet | - | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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CDA10N30X1CGANFET 100V 30A .009 OHM 4DAPT |
100 | - |
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Datasheet | - | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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CDA10N05X2CGANFET 100V 5A .030 OHM 4DAPT |
100 | - |
|
Datasheet | - | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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CDA20N18X3CGANFET 200V 18A .025 OHM 4DAPT |
64 | - |
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Datasheet | - | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
FETs, MOSFETs FAQ
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