FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
AOM015V65X2 650V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	238	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	96A (Tc)	15V	22mOhm @ 24A, 15V	3.5V @ 24mA	152 nC @ 15 V	+15V, -5V	4880 pF @ 400 V	-	312W (Tj)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4L
AOK015V65X2 650V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	238	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	96A (Tc)	15V	22mOhm @ 24A, 15V	3.5V @ 24mA	152 nC @ 15 V	+15V, -5V	4880 pF @ 400 V	-	312W (Tj)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247
C3M0025075K1 SICFET N-CH 750V 80A TO247 Wolfspeed, Inc.	184	-	RFQ	Datasheet	-	TO-247-4	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	80A (Ta)	15V	34mOhm @ 33.5A, 15V	3.8V @ 9.22mA	119 nC @ 15 V	-8V, +19V	3055 pF @ 500 V	-	262W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4L
NVHL025N065SC1 SIC MOS TO247-3L 650V onsemi	450	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	99A (Tc)	15V, 18V	28.5mOhm @ 45A, 18V	4.3V @ 15.5mA	164 nC @ 18 V	+22V, -8V	3480 pF @ 325 V	-	348W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-3
NSF040120L4A0Q NSF040120L4A0/SOT8071/TO247-4L Nexperia USA Inc.	432	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	65A (Tj)	15V, 18V	60mOhm @ 40A, 15V	2.9V @ 4mA	95 nC @ 15 V	+22V, -10V	2600 pF @ 800 V	-	306W (Tj)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247
NVH4L025N065SC1 SIC MOS TO247-4L 650V onsemi	882	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	99A (Tc)	15V, 18V	28.5mOhm @ 45A, 18V	4.3V @ 15.5mA	164 nC @ 18 V	+22V, -8V	3480 pF @ 325 V	-	348W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L
IPQC60R010S7XTMA1 MOSFET Infineon Technologies	750	-	RFQ	Datasheet	CoolMOS™ S7	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	50A (Tc)	12V	10mOhm @ 50A, 12V	4.5V @ 3.08mA	318 nC @ 12 V	±20V	-	-	694W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-22
NTHL019N60S5F SUPERFET5 FRFET, 19MOHM, TO-247- onsemi	442	-	RFQ	Datasheet	SuperFET® V, FRFET®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	75A (Tc)	10V	19mOhm @ 37.5A,10V	4.8V @ 15.7mA	252 nC @ 10 V	±30V	13400 pF @ 400 V	-	568W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3
E3M0040120J2-TR 40m, 1200V SiC FET, TO-263-7 XL Wolfspeed, Inc.	736	-	RFQ	Datasheet	E	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	63A (Tc)	15V	53mOhm @ 31.9A, 15V	3.8V @ 8.77mA	91 nC @ 15 V	+19V, -8V	2726 pF @ 1000 V	-	294W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263-7
AOM020V120X2 1200V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	230	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	89A (Tc)	15V	28mOhm @ 27A, 15V	2.8V @ 27mA	166 nC @ 15 V	+18V, -8V	5180 pF @ 800 V	-	348W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4L
S2M0016120D-1 MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	140A (Tc)	18V, 20V	23mOhm @ 75A, 20V	3.6V @ 23mA	285 nC @ 20 V	+20V, -5V	4540 pF @ 1000 V	-	517W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AD
NVH4L030N120M3S SILICON CARBIDE (SIC) MOSFET-ELI onsemi	393	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	73A (Tc)	18V	39mOhm @ 30A, 18V	4.4V @ 15mA	107 nC @ 18 V	+22V, -10V	2430 pF @ 800 V	-	313W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L
S2M0016120K-1 MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	147	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	140A (Tc)	18V, 20V	23mOhm @ 75A, 20V	3.6V @ 23mA	285 nC @ 20 V	+20V, -5V	4540 pF @ 1000 V	-	517W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
TSG65N068CE RVG 650V, 30A, PDFN88, E-MODE GAN TR Taiwan Semiconductor Corporation	2,962	-	RFQ	Datasheet	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
C3M0065100J-TR SICFET N-CH 1000V 35A TO263-7 Wolfspeed, Inc.	788	-	RFQ	Datasheet	C3M™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Last Time Buy	N-Channel	SiCFET (Silicon Carbide)	1000 V	35A (Tc)	15V	78mOhm @ 20A, 15V	3.5V @ 5mA	35 nC @ 15 V	+15V, -4V	660 pF @ 600 V	-	113.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263-7
G3F20MT12J-TR 1200V 20M TO-263-7 G3F SIC MOSFE GeneSiC Semiconductor	800	-	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	108A (Tc)	18V	26.5mOhm @ 40A, 18V	4.3V @ 30mA	176 nC @ 18 V	+22V, -10V	4317 pF @ 800 V	-	448W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263-7
IMZA75R016M1HXKSA1 SILICON CARBIDE MOSFET Infineon Technologies	210	-	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	89A (Tj)	15V, 20V	15mOhm @ 41.5A, 20V	5.6V @ 14.9mA	81 nC @ 18 V	+23V, -5V	2869 pF @ 500 V	-	319W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4
AIMZA75R016M1HXKSA1 SICFET N-CH 750V 89A PG-TO247-4 Infineon Technologies	213	-	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	89A (Tc)	15V, 20V	22mOhm @ 41.5A, 18V	5.6V @ 14.9mA	81 nC @ 18 V	+23V, -5V	2869 pF @ 500 V	-	319W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	PG-TO247-4
DIF120SIC053-AQ MOSFET TO-247-4L N 65A 1200V Diotec Semiconductor	433	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	65A (Tc)	18V	53mOhm @ 33A, 18V	4V @ 9.5mA	121 nC @ 15 V	-	2070 pF @ 1000 V	-	278W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4
DIW120SIC059-AQ MOSFET TO-247-3L N 65A 1200V Diotec Semiconductor	430	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	65A (Tc)	18V	53mOhm @ 33A, 18V	4V @ 9.5mA	121 nC @ 15 V	-	2070 pF @ 1000 V	-	278W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247

FETs, MOSFETs FAQ

What FETs, MOSFETs components can I source from EGOO?

You can browse available FETs, MOSFETs product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete FETs, MOSFETs parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

Does EGOO support BOM and small-batch sourcing?

Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

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