FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
AOK015V75X2Q 750V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	226	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	96A (Tc)	15V	22mOhm @ 24A, 15V	3.5V @ 24mA	152 nC @ 15 V	+15V, -5V	4880 pF @ 400 V	-	312W (Tj)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247
AOM015V75X2Q 750V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	205	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	96A (Tc)	15V	22mOhm @ 24A, 15V	3.5V @ 24mA	152 nC @ 15 V	+15V, -5V	4880 pF @ 400 V	-	312W (Tj)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L
IMW65R010M2HXKSA1 IMW65R010M2HXKSA1 Infineon Technologies	396	-	RFQ	Datasheet	CoolSiC™	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	130A (Tc)	15V, 20V	9.1mOhm @ 92.1A, 20V	5.6V @ 18.7mA	112 nC @ 18 V	+23V, -7V	4001 pF @ 400 V	-	440W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-3-40
G3F20MT12K 1200V 20M TO-247-4 G3F SIC MOSFE GeneSiC Semiconductor	595	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-247-4
NVHL070N120M3S SIC MOS TO247-3L 70MOHM 1200V M3 onsemi	410	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	34A (Tc)	18V	87mOhm @ 15A, 18V	4.4V @ 7mA	57 nC @ 18 V	+22V, -10V	1230 pF @ 800 V	-	160W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-3
S3M0016120B MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300	-	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	106A (Tc)	18V	23mOhm @ 75A, 18V	4V @ 30mA	287 nC @ 18 V	+22V, -8V	5251 pF @ 1000 V	-	576W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7
IMZA65R010M2HXKSA1 IMZA65R010M2HXKSA1 Infineon Technologies	400	-	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	144A (Tc)	15V, 20V	9.1mOhm @ 92.1A, 20V	5.6V @ 18.7mA	112 nC @ 18 V	+23V, -7V	4001 pF @ 400 V	-	440W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-8
E4M0025075J2-TR MOSFETS 3055 PF 281W 3.8V 114 NC Wolfspeed, Inc.	524	-	RFQ	Datasheet	E	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	84A (Tc)	15V	34mOhm @ 33.5A, 15V	3.8V @ 9.22mA	114 nC @ 15 V	+19V, -8V	3055 pF @ 500 V	-	281W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263-7
E4M0025075K1 MOSFETS AUTOMOTIVE 262W 3.8V NC Wolfspeed, Inc.	286	-	RFQ	Datasheet	E	TO-247-4	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	80A (Tc)	15V	34mOhm @ 33.5A, 15V	3.8V @ 9.22mA	119 nC @ 15 V	+19V, -8V	3055 pF @ 500 V	-	262W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L
AIMBG120R020M1XTMA1 SIC_DISCRETE Infineon Technologies	864	-	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	104A (Tc)	18V, 20V	25mOhm @ 43A, 20V	5.1V @ 15mA	82 nC @ 20 V	+23V, -5V	2667 pF @ 800 V	-	468W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-TO263-7-12
IMZC120R012M2HXKSA1 IMZC120R012M2HXKSA1 Infineon Technologies	215	-	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	129A (Tc)	15V, 18V	12mOhm @ 57A, 18V	5.1V @ 17.8mA	124 nC @ 18 V	+23V, -7V	4050 pF @ 800 V	-	480W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-17
APT1201R2BFLLG MOSFET N-CH 1200V 12A TO247 Microchip Technology	274	-	RFQ	Datasheet	POWER MOS 7®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	12A (Tc)	-	1.25Ohm @ 6A, 10V	5V @ 1mA	100 nC @ 10 V	-	2540 pF @ 25 V	-	-	-	-	-	Through Hole	TO-247 [B]
IXFX32N80Q3 MOSFET N-CH 800V 32A PLUS247-3 Littelfuse Inc.	600	-	RFQ	Datasheet	HiPerFET™, Q3 Class	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	32A (Tc)	10V	270mOhm @ 16A, 10V	6.5V @ 4mA	140 nC @ 10 V	±30V	6940 pF @ 25 V	-	1000W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3
G3F18MT12J-TR 1200V 18M TO-263-7 G3F SIC MOSFE GeneSiC Semiconductor	800	-	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	122A (Tc)	18V	25mOhm @ 45A, 18V	4.3V @ 35mA	212 nC @ 18 V	+22V, -10V	4962 pF @ 800 V	-	526W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263-7
C3M0021120K1 MOSFET N-CH 1200V 104A TO247-4L Wolfspeed, Inc.	900	-	RFQ	Datasheet	-	TO-247-4	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	104A (Tc)	15V	29mOhm @ 62.1A, 15V	3.8V @ 17.1mA	177 nC @ 15 V	+19V, -8V	5100 pF @ 1000 V	-	405W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4L
AOM020V120X2Q 1200V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	217	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	89A (Tc)	15V	28mOhm @ 27A, 15V	2.8V @ 27mA	166 nC @ 15 V	+15V, -5V	5180 pF @ 800 V	-	348W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L
TW030Z120C,S1F G3 1200V SIC-MOSFET TO-247-4L 3 Toshiba Semiconductor and Storage	105	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	60A (Tc)	18V	41mOhm @ 30A, 18V	5V @ 13mA	82 nC @ 18 V	+25V, -10V	2925 pF @ 800 V	-	249W (Tc)	175°C	-	-	Through Hole	TO-247-4L(X)
G3F18MT12K 1200V 18M TO-247-4 G3F SIC MOSFE GeneSiC Semiconductor	595	-	RFQ	Datasheet	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
E3M0032120J2-TR 32m, 1200V SiC FET, TO-263-7 XL Wolfspeed, Inc.	729	-	RFQ	Datasheet	E	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	74A (Tc)	15V	43mOhm @ 38.9A, 15V	3.8V @ 10.7mA	108 nC @ 15 V	+19V, -8V	3460 pF @ 1000 V	-	341W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263-7
SCTH100N65G2-7AG SICFET N-CH 650V 95A H2PAK-7 STMicroelectronics	876	-	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	95A (Tc)	18V	26mOhm @ 50A, 18V	5V @ 5mA	162 nC @ 18 V	+22V, -10V	3315 pF @ 520 V	-	360W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	H2PAK-7

FETs, MOSFETs FAQ

What FETs, MOSFETs components can I source from EGOO?

You can browse available FETs, MOSFETs product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete FETs, MOSFETs parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

Does EGOO support BOM and small-batch sourcing?

Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

How do I request pricing and availability?

Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.